US4399520A
Expired / Lapsed
US
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Semiconductor integrated circuit device
Assignee: Toshiba Corp
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Filing: 1981-02-19
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Granted: 1983-08-16
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Expires: 2001-02-19
Abstract
Abstract A semiconductor integrated circuit having a memory and an adjacent peripheral circuit generating minority carriers which can destroy data in a portion of the memory at low temperatures. The load resistance in the portion is made lower or the storage capacity is made higher in the portion than in the remainder of the memory so that at low temperatures data is not lost and the energy consumption of the circuit is not unduly increased.
Inventors
- 👤 Shoji Ariizumi
- 👤 Makoto Segawa
- 👤 Hisaaki Maiwa
- 👤 Seishi Okamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 06:46
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/403; G11C11/41; G11C11/412; G11C19/00; G11C19/18; H; H10; H10B; H10B99/00; H10B99/22
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
104 words
A semiconductor integrated circuit having a memory made up of individual elements having associated circuit values and a peripheral circuit generating minority carriers which influence some of the elements making up a portion of said memory wherein said elements are formed so that the values of at least one of said circuit elements are set in said portion different from the values in the remainder of said memory so that the effect of the influence is reduced in said portion so stored data, which would be otherwise lost if the values were the same as in the remainder of the memory, is not lost.
Claim 2
Dependent Claim
104 words
A semiconductor integrated circuit having a memory made up of individual elements having associated circuit values and a peripheral circuit generating minority carriers which influence some of the elements making up a portion of said memory wherein said elements are formed so that the values of at least one of said circuit elements are set in said portion different from the values in the remainder of said memory so that the effect of the influence is reduced in said portion so stored data, which would be otherwise lost if the values were the same as in the remainder of the memory, is not lost.
Claim 3
Dependent Claim
46 words
A semiconductor integrated circuit device as in claim 1, wherein said elements are resistors and are formed using polycrystalline silicon, and the value of the resistance of each element in said portion is less than the value of the resistance in the remainder of said memory.
Claim 4
Dependent Claim
39 words
A semiconductor integrated circuit device as in claim 1, wherein elements are capacitors and are formed to provide storage capacities, and the storage capacities in said portion being more than the storage capacities in the remainder of said memory.
References Cited (Backward Citations)
US4163245A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-08-15 | 1987-02-14 | 1987-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-08-15 | 1991-02-14 | 1991-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-08-15 | 1995-02-14 | 1995-08-16 | $7700.00 | Window Closed / Lapsed |