US4396443A
Expired / Lapsed
US
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Reduction of leakage current in InGaAs diodes
Assignee: AT&T Inc
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Filing: 1982-01-18
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Granted: 1983-08-02
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Expires: 2002-01-18
Abstract
Abstract The reverse leakage current of InGaAs diodes, in particular the dark current of In 0 .53 Ga 0 .47 As photodiodes, is reduced by a treatment in a 1:1:X solution of H 2 O 2 :H 2 SO 4 :H 2 O where 10≦×≦100 approximately.
Inventors
- 👤 Hans J. Lewerenz
- 👤 Hans J. Stocker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:14
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/15; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2215; H10F71/00; H10F71/127; H10F71/1272; H10F77/00; H10F77/10; H10F77/12; H10F77/124; H10F77/1248; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
34 words
A method of reducing the leakage current of an InGaAs diode by subjecting said diode to a 1:1:X solution of H 2 O 2 :H 2 SO 4 :H 2 O, where 10≦X≦100 approximately.
Claim 2
Independent Claim
34 words
A method of reducing the leakage current of an InGaAs diode by subjecting said diode to a 1:1:X solution of H 2 O 2 :H 2 SO 4 :H 2 O, where 10≦X≦100 approximately.
Claim 3
Independent Claim
49 words
A method of reducing the leakage current of an InGaAs diode by subjecting said diode to a 1:1:X solution of H 2 O 2 :H 2 SO 4 :H 2 O where X is chosen so as to produce an overlayer which is essentially impervious to etching in HF.
Claim 4
Independent Claim
49 words
A method of reducing the leakage current of an InGaAs diode by subjecting said diode to a 1:1:X solution of H 2 O 2 :H 2 SO 4 :H 2 O where X is chosen so as to produce an overlayer which is essentially impervious to etching in HF.
Claim 5
Independent Claim
66 words
A method of reducing the dark current of a photodiode comprising the steps of providing an InP body, epitaxially growing at least one layer of In 0 .53 Ga 0 .47 As on said substrate, forming a p-n junction in said at least one layer, subjecting said photodiode to a 1:1:X solution of H 2 O 2 :H 2 SO 4 :H 2 O, where 10≦X≦100.
Claim 6
Independent Claim
66 words
A method of reducing the dark current of a photodiode comprising the steps of providing an InP body, epitaxially growing at least one layer of In 0 .53 Ga 0 .47 As on said substrate, forming a p-n junction in said at least one layer, subjecting said photodiode to a 1:1:X solution of H 2 O 2 :H 2 SO 4 :H 2 O, where 10≦X≦100.
Claim 7
Dependent Claim
28 words
The method of claim 3 further including between said growing step and said subjecting step the additional step of etching at least said layers to form a mesa.
Claim 8
Dependent Claim
26 words
The method of claim 4 wherein said etching step comprises etching with 1:1:X (H 2 O 2 :H 2 SO 4 :H 2 O) where X≦30.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-08-01 | 1987-01-31 | 1987-08-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-08-01 | 1991-01-31 | 1991-08-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-08-01 | 1995-01-31 | 1995-08-02 | $7700.00 | Window Closed / Lapsed |