US4392210A
Expired / Lapsed
US
⏱️ 0.0 years remaining
One transistor-one capacitor memory cell
Assignee: STMicroelectronics lnc USA
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Filing: 1978-08-28
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Granted: 1983-07-05
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Expires: 1998-08-28
Abstract
Abstract An integrated circuit memory cell pair having its data lines insulatively disposed from the semiconductor substrate at all points other than the point of electrical contact to the transistors of each memory cell. The semiconductor substrate has drain and source regions about the transmission channel of the field effect transistor and has a first capacitor electrode integral with one terminal of the transistor. A first polysilicon layer insulatively disposed from the substrate provides a conductive layer for a second capacitor electrode for each memory cell. A second insulatively disposed polysilicon layer provides the gate regions of the transistors and the data lines. The data lines make electrical contact through a self-aligned buried contact. Using this construction, a highly dense memory cell array is achieved without sacrificing capacitor area.
Inventors
- 👤 Tsiu C. Chan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:54
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/403; G11C11/404; H; H10; H10B; H10B12/00; H10B12/30
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
85 words
In an integrated circuit memory of the type including an array of memory cells fabricated on a semiconductor substrate, each cell including a gate-controlled switch and a charge storage capacitor coupled to said switch, wherein one plate of each charge storage capacitor is formed by a conductive region within said substrate, the improvement comprising a conductive sheet overlying the cells of the array and insulated with respect to each conductive substrate region, said conductive sheet defining a common plate for each capacitor in the array.
Claim 2
Dependent Claim
85 words
In an integrated circuit memory of the type including an array of memory cells fabricated on a semiconductor substrate, each cell including a gate-controlled switch and a charge storage capacitor coupled to said switch, wherein one plate of each charge storage capacitor is formed by a conductive region within said substrate, the improvement comprising a conductive sheet overlying the cells of the array and insulated with respect to each conductive substrate region, said conductive sheet defining a common plate for each capacitor in the array.
Claim 3
Dependent Claim
115 words
In an integrated circuit memory of the type including an array of memory cells fabricated on a semiconductor substrate in rows and columns, each cell including a gate-controlled switch having source and drain elements formed in the substrate and a charge storage capacitor coupled to each cell, the improvement comprising: one element of each gate-controlled switch defining a conductive plate for the charge storage capacitor in each cell; a layer of insulating material overlying the source and drain elements in each cell; a sheet of conductive material overlying the insulating layer and extending over all cells of the array, said conductive sheet defining a common conductive plate for the storage capacitors of the memory array.
Claim 4
Dependent Claim
115 words
In an integrated circuit memory of the type including an array of memory cells fabricated on a semiconductor substrate in rows and columns, each cell including a gate-controlled switch having source and drain elements formed in the substrate and a charge storage capacitor coupled to each cell, the improvement comprising: one element of each gate-controlled switch defining a conductive plate for the charge storage capacitor in each cell; a layer of insulating material overlying the source and drain elements in each cell; a sheet of conductive material overlying the insulating layer and extending over all cells of the array, said conductive sheet defining a common conductive plate for the storage capacitors of the memory array.
Claim 5
Dependent Claim
156 words
In an integrated circuit memory of the type having an array of memory cells fabricated on semiconductor substrate in rows and columns, each cell including a transistor switch having source and drain regions formed in the substrate and an insulated gate coupled to a word select line, and a charge storage capacitor electrically coupled to each transistor switch, the improvement comprising: the drain region of each transistor switch defining a conductive plate for the charge storage capacitor in each cell; the source regions of adjacent transistors of a pair of cells in each row being formed in common; a layer of insulation overlying the source and drain regions of each transistor switch; a conductive sheet overlying the insulation layer and defining a common plate for all charge storage capacitors in the array; and, a data line electrically coupled to the common source diffusion region of each cell pair and insulated with respect to said conductive sheet.
Claim 6
Dependent Claim
156 words
In an integrated circuit memory of the type having an array of memory cells fabricated on semiconductor substrate in rows and columns, each cell including a transistor switch having source and drain regions formed in the substrate and an insulated gate coupled to a word select line, and a charge storage capacitor electrically coupled to each transistor switch, the improvement comprising: the drain region of each transistor switch defining a conductive plate for the charge storage capacitor in each cell; the source regions of adjacent transistors of a pair of cells in each row being formed in common; a layer of insulation overlying the source and drain regions of each transistor switch; a conductive sheet overlying the insulation layer and defining a common plate for all charge storage capacitors in the array; and, a data line electrically coupled to the common source diffusion region of each cell pair and insulated with respect to said conductive sheet.
Claim 7
Dependent Claim
46 words
The integrated circuit memory as defined in claim 3, said conductive sheet having a window opening overlying the common source diffusion region of each cell pair, said data line overlying said conductive sheet and electrically coupled to the common source diffusion region through the window opening.
Claim 8
Dependent Claim
174 words
In an integrated circuit memory of the type including an array of memory cell pairs fabricated on a semiconductor substrate, each cell including agate-controlled switch and a charge storage capacitor coupled to said switch, each switch having source and drain elements formed in active regions of the substrate and an insulated gate coupled to a word select line, the improvement comprising: the source elements of each cell pair being formed in common; the drain element of each gate-controlled switch defining a conductive plate for the charge storage capacitor in each cell; a conductive sheet overlying the substrate and defining a common plate for all storage capacitors of the array, said conductive sheet being insulated with respect to the active regions of said substrate and having a window opening providing access to the common source elements of each cell pair; and, a data line overlying the conductive sheet and electrically coupled to the common source elements of each cell pair through the window opening, said data line being insulated with respect to the conductive sheet.
Claim 9
Dependent Claim
174 words
In an integrated circuit memory of the type including an array of memory cell pairs fabricated on a semiconductor substrate, each cell including agate-controlled switch and a charge storage capacitor coupled to said switch, each switch having source and drain elements formed in active regions of the substrate and an insulated gate coupled to a word select line, the improvement comprising: the source elements of each cell pair being formed in common; the drain element of each gate-controlled switch defining a conductive plate for the charge storage capacitor in each cell; a conductive sheet overlying the substrate and defining a common plate for all storage capacitors of the array, said conductive sheet being insulated with respect to the active regions of said substrate and having a window opening providing access to the common source elements of each cell pair; and, a data line overlying the conductive sheet and electrically coupled to the common source elements of each cell pair through the window opening, said data line being insulated with respect to the conductive sheet.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-07-04 | 1987-01-03 | 1987-07-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-07-04 | 1991-01-03 | 1991-07-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-07-04 | 1995-01-03 | 1995-07-05 | $7700.00 | Window Closed / Lapsed |