US4392152A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1980-02-29
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Granted: 1983-07-05
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Expires: 2000-02-29
Abstract
Abstract A semiconductor device wherein a semiconductor element is bonded with brazing material on a metalized layer formed on an insulating substrate, with lead wires being used to connect the electrodes of the semiconductor element to the metalized layer. An element bonding area and lead wire connecting areas are provided on the metalized layer and are separated, at the inside of an aperture provided in a sealing member which seals the semiconductor element, by separation regions. Therefore, the brazing material used for securing the semiconductor element to the metalized layer does not flow up to the lead wire connecting areas, thus improving the manufacturing yield and reliability of the semiconductor device.
Inventors
- 👤 Yutaka Hirano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 07:55
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/071; H10W72/075; H10W44/00; H10W44/20; H10W70/00; H10W70/40; H10W70/456; H10W70/457; H10W70/481; H10W76/00; H10W76/10; H10W76/12; H10W76/15; H10W76/157; H10W70/60; H10W70/67; H10W70/68; H10W70/682; H10W70/685; H10W72/073; H10W72/07331; H10W72/07337; H10W72/30; H10W72/351; H10W72/352; H10W72/50; H10W72/531; H10W72/5363; H10W72/541; H10W72/5445; H10W72/5449; H10W72/551; H10W72/552; H10W72/5522; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/921; H10W72/926; H10W90/00; H10W90/701; H10W90/731; H10W90/734; H10W90/751; H10W90/754; H10W90/755; H10W90/756
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
124 words
A semiconductor device, comprising: an insulating substrate, an integral metalized layer formed on said substrate, brazing material, a lead wire extending from said semiconductor element to said metalized layer on which said semiconductor element is mounted, and a hollow hermetically sealing member having an inner wall disposed around said semiconductor element, wherein said metalized layer on which said semiconductor element is bonded by means of said brazing material and to which said lead wire extends is separated by a separation area therein into a semiconductor element bonding area where said semiconductor element is bonded to said metalized layer and a lead wire connecting area where said lead wire is connected to said metalized layer at the inside of said wall of said sealing member.
Claim 2
Dependent Claim
124 words
A semiconductor device, comprising: an insulating substrate, an integral metalized layer formed on said substrate, brazing material, a lead wire extending from said semiconductor element to said metalized layer on which said semiconductor element is mounted, and a hollow hermetically sealing member having an inner wall disposed around said semiconductor element, wherein said metalized layer on which said semiconductor element is bonded by means of said brazing material and to which said lead wire extends is separated by a separation area therein into a semiconductor element bonding area where said semiconductor element is bonded to said metalized layer and a lead wire connecting area where said lead wire is connected to said metalized layer at the inside of said wall of said sealing member.
Claim 3
Dependent Claim
51 words
A semiconductor device as claimed in claim 1, wherein the separation area separating said metalized layer into said semiconductor element bonding area and said lead wire connecting area at the inside of said wall is provided by a non-metalized region between said semiconductor bonding area and said lead wire connecting area.
Claim 4
Dependent Claim
16 words
A semiconductor device as claimed in claim 1, wherein said sealing member comprises an insulating frame.
Claim 5
Dependent Claim
18 words
A semiconductor device as claimed in claim 1, wherein said semiconductor element is a GaAs field effect transistor.
Claim 6
Dependent Claim
35 words
A semiconductor device as claimed in claim 4, wherein said lead wire extending to said lead wire connecting area of said metalized layer is connected to a source electrode of the GaAs field effect transistor.
Claim 7
Dependent Claim
115 words
An improved semiconductor device of the type wherein a semiconductor element is brazed to an integral metalized layer on an insulating substrate and a lead wire extending from the active region of the semiconductor element is connected to the metalized layer on which the semiconductor element is brazed, the semiconductor element being enclosed by a hollow member having an inner wall, wherein the improvement comprises: the metalized layer on which the semiconductor element is brazed and to which the lead wire extending from the active region of the semiconductor element is connected has a non-metalized region positioned between the semiconductor element and the point at which the lead wire is connected to the metalized layer.
Claim 8
Dependent Claim
115 words
An improved semiconductor device of the type wherein a semiconductor element is brazed to an integral metalized layer on an insulating substrate and a lead wire extending from the active region of the semiconductor element is connected to the metalized layer on which the semiconductor element is brazed, the semiconductor element being enclosed by a hollow member having an inner wall, wherein the improvement comprises: the metalized layer on which the semiconductor element is brazed and to which the lead wire extending from the active region of the semiconductor element is connected has a non-metalized region positioned between the semiconductor element and the point at which the lead wire is connected to the metalized layer.
Claim 9
Dependent Claim
21 words
The device of claim 6, wherein the non-metalized region extends between the substrate and the inner wall of the hollow member.
Claim 10
Dependent Claim
38 words
The device of claim 7, wherein the non-metalized region is generally V-shaped, the two legs of the V extending beyond the inner wall of the hollow member with the apex of the V being within the hollow member.
Claim 11
Dependent Claim
32 words
The device of claim 7, wherein the non-metalized region extends from the periphery of the metalized layer within the hollow member to a point beyond the inner wall of the hollow member.
Claim 12
Dependent Claim
34 words
The device of claim 6, 7, 8, or 9, wherein the semiconductor element comprises a GaAs field effect transistor having a source and the lead wire extends from said source to the metalized layer.
References Cited (Backward Citations)
US3801881A
Cited
US3908184A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-07-04 | 1987-01-03 | 1987-07-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-07-04 | 1991-01-03 | 1991-07-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-07-04 | 1995-01-03 | 1995-07-05 | $7700.00 | Window Closed / Lapsed |