Passivation of metallic equipment surfaces in electroless copper deposition processes

Claim 2

In a method for electrolessly depositing copper from an electroless copper deposition solution of known mixed potential on at least one substrate sensitive to such deposition, the improvement for rendering the metallic surfaces of plating equipment in contact with the solution substantially resistant to electroless copper deposition, comprising: (1) initially imposing on said metallic plating equipment surfaces an electrical potential more positive than the mixed potential of the electroless copper solution but not substantially more positive than required to render said equipment surfaces substantially resistant to electroless copper deposition; (2) electroless depositing copper on said substrate from said electroless copper solution; and (3) while electrolessly depositing copper on said substrate, adjusting said more positive electrical potential to maintain said more positive electrical potential sufficiently positive to resist electroless copper deposition.

Claim 3

The method of claim 1, in which the electroless copper solution has a mixed potential in the range between -500 and -800 millivolts relative to a standard silver-silver chloride reference electrode and in the range between -550 and -850 millivolts relative to a saturated calomel reference electrode.

Claim 4

The method of claim 2, in which the electrical potential imposed and maintained on said metallic equipment surfaces is in the range between -500 and +500 millivolts relative to said reference electrode, and more positive than said mixed potential.

Claim 5

The method of claim 3, in which said electrical potential is in the range between -300 and -100 millivolts, relative to said reference electrode.

Claim 6

The method of claim 2, in which the electrical potential imposed and maintained on said metallic equipment surfaces is at least about 250 millivolts more positive than said mixed potential.

Claim 7

The method of claim 1, in which said plating equipment comprises a plating vessel having metallic retaining walls in which the deposition solution is contained.

Claim 8

The method of claim 1, in which said plating equipment comprises a rack supporting the substrate being plated in the deposition solution, said rack being constructed wholly or in part of metal.

Claim 9

The methods of claims 6 or 7, in which said equipment metal is steel.

Claim 10

The methods of claims 6 or 7, in which said equipment is stainless steel.

Claim 13

The method of claim 10, in which the electrical potential imposed and maintained on said metallic equipment surfaces is in the range between -500 and +500 millivolts, relative to a standard silver-silver chloride reference electrode or saturated calomel reference electrode, and more positive than said mixed potential.

Claim 14

The method of claim 11, in which said electrical potential is in the range between -300 and -100 millivolts, relative to said reference electrode.

Claim 15

The method of claim 11, in which said electrical potential is at least 250 millivolts more positive than said mixed potential.

Claim 16

The method of claim 10, in which said current is in the range between 10 -4 to 4 milliamps per square centimeter of surface area to be rendered resistant to said electroless copper deposition.

Claim 17

The method of claim 10, in which said equipment surfaces are comprised of stainless steel.

Claim 18

The method of claim 10, in which said plating equipment comprises a plating vessel having stainless steel retaining walls, at least one rack made wholly or in part of stainless steel, or both of the foregoing.

Claim 19

The method of claim 10, in which the electroless copper deposition solution comprises copper ion, a complexing agent for copper ion and a reducing agent.

Claim 20

The method of claim 10, in which the substrate being plated comprises an insulating material useful in the manufacture of printed circuit boards.

Claim 21

In a method for the production of printed circuit boards by electrolessly depositing copper on a substrate from a solution comprising copper ion, a complexing agent for copper ion and formaldehyde, while said solution is contained in a vessel having stainless steel retaining walls and said substrate is supported in said solution on a rack comprising stainless steel, the improvement comprising: (1) providing at least one cathode in the electroless copper solution and in electrical connection with said retaining walls and rack; (2) initially imposing a current in said electrical connection, said current being sufficient to establish an electrical potential on said retaining walls and rack more positive than the mixed potential of said electroless copper solution but not substantially more positive than required to resist formation thereon of an electroless copper deposition from said solution; (3) electrolessly depositing copper on said substrate from said electroless copper solution; and (4) while electrolessly depositing copper on said substrate, regulating said current imposed on said electrical connection to maintain said more positive electrical potential more positive than said mixed potential but not substantially more positive than required to resist formation thereon of an electroless copper deposit.

Claim 22

In a method for the production of printed circuit boards by electrolessly depositing copper on a substrate from a solution comprising copper ion, a complexing agent for copper ion and formaldehyde, while said solution is contained in a vessel having stainless steel retaining walls and said substrate is supported in said solution on a rack comprising stainless steel, the improvement comprising: (1) providing at least one cathode in the electroless copper solution and in electrical connection with said retaining walls and rack; (2) initially imposing a current in said electrical connection, said current being sufficient to establish an electrical potential on said retaining walls and rack more positive than the mixed potential of said electroless copper solution but not substantially more positive than required to resist formation thereon of an electroless copper deposition from said solution; (3) electrolessly depositing copper on said substrate from said electroless copper solution; and (4) while electrolessly depositing copper on said substrate, regulating said current imposed on said electrical connection to maintain said more positive electrical potential more positive than said mixed potential but not substantially more positive than required to resist formation thereon of an electroless copper deposit.

Claim 23

The process of claim 19, in which the electroless copper solution has a mixed potential in the range between -500 and -800 millivolts relative to a standard silver-silver chloride reference electrode, and in the range between -550 and -850 millivolts relative to a saturated calomel reference electrode.

Claim 24

The method of claim 20, in which the electrical potential imposed and maintained on the retaining walls and rack is in the range between -500 and +500 millivolts, relative to said reference electrode.

Claim 25

The method of claim 21, in which said electrical potential is in the range between -300 and -100 millivolts relative to said reference electrode.

Claim 26

The method of claim 21, in which said electrical potential is at least 250 millivolts more positive than said mixed potential.

Claim 27

The method of claim 19, in which said current is in the range between 10 -4 to 4 milliamps per square centimeter of surface area to be rendered resistant to said electroless copper deposition.