Phase-locked CDH-LOC injection laser array

Claim 2

A phase-locked semiconductor injection laser array comprising: a body of semiconductor material having a pair of spaced, parallel end surfaces which are reflective of light at the laser wavelength with at least one of the faces being partially transparent and including a substrate with a pair of opposed major surfaces with a plurality of separate pairs of spaced, substantially parallel grooves in a first major surface of the substrate and extending between the end faces; a first confinement epitaxial layer, overlying the surface of the substrate and the surfaces of the grooves; a guide epitaxial layer overlying the first confinement layer; an active epitaxial layer overlying the guide layer; a second confinement epitaxial layer overlying the active layer; and electrical contacts to the second confinement epitaxial layer and the second major surface of the substrate; wherein the body, the first confinement layer and the guide layer are of one conductivity type and the second confinement layer is of the opposite conductivity type; wherein the material of the active layer has an index of refraction greater than that of the materials of the first and second confinement layers and the material of the guide layer has an index of refraction less than that of the material of the active layer but greater than that of the material of each of the first and second confinement layers, and wherein the separate pairs of grooves are spaced an effective distance apart so that light generated in the active layer above a pair of grooves and propagating as a single optical mode in both the active and guide layers interacts with light generated above other pairs of grooves such that the optical modes are phase locked to one another.

Claim 3

A phase-locked semiconductor injection laser array comprising: a body of semiconductor material having a pair of spaced, parallel end surfaces which are reflective of light at the laser wavelength with at least one of the faces being partially transparent and including a substrate with a pair of opposed major surfaces with a plurality of separate pairs of spaced, substantially parallel, dove-tail shaped grooves in a first major surface of the substrate and extending between the end faces; a first confinement epitaxial layer, overlying the surface of the substrate and the surfaces of the grooves; a guide epitaxial layer overlying the first confinement layer; an active epitaxial layer overlying the guide layer; a second confinement epitaxial layer overlying the active layer; and electrical contacts to the second confinement epitaxial layer and the second major surface of the substrate; wherein the body, the first confinement layer and the guide layer of one conductivity type and the second confinement layer is of the opposite conductivity type; wherein the material of the active layer has an index of refraction greater than that of the materials of the first and second confinement layers and the material of the guide layer has an index of refraction less than that of the material of the active layer but greater than that of the material of each of the first and second confinement layers, and wherein the separate pairs of grooves are spaced an effective distance apart so that light generated in the active layer above a pair of grooves and propagating as a single optical mode in both the active and guide layers interacts with light generated above other pairs of grooves such that the optical modes are phase locked to one another.

Claim 4

A phase-locked semiconductor injection laser array comprising: a body of semiconductor material having a pair of spaced, parallel end surfaces which are reflective of light at the laser wavelength with at least one of the faces being partially transparent and including a substrate with a pair of opposed major surfaces with a plurality of separate pairs of spaced, substantially parallel, dove-tail shaped grooves in a first major surface of the substrate and extending between the end faces; a first confinement epitaxial layer, overlying the surface of the substrate and the surfaces of the grooves; a guide epitaxial layer overlying the first confinement layer; an active epitaxial layer overlying the guide layer; a second confinement epitaxial layer overlying the active layer; and electrical contacts to the second confinement epitaxial layer and the second major surface of the substrate; wherein the body, the first confinement layer and the guide layer of one conductivity type and the second confinement layer is of the opposite conductivity type; wherein the material of the active layer has an index of refraction greater than that of the materials of the first and second confinement layers and the material of the guide layer has an index of refraction less than that of the material of the active layer but greater than that of the material of each of the first and second confinement layers, and wherein the separate pairs of grooves are spaced an effective distance apart so that light generated in the active layer above a pair of grooves and propagating as a single optical mode in both the active and guide layers interacts with light generated above other pairs of grooves such that the optical modes are phase locked to one another.

Claim 5

A semiconductor injection laser array in accordance with claim 1 or 2 in which a buffer layer composed of the same material and having the same conductivity type as that of the substrate is interposed between the substrate and the first confinement layer.

Claim 6

A semiconductor laser array in accordance with claim 3 in which the guide layer has a portion which tapers in increasing thickness away from that portion of the guide layer which is over the surface portion of the substrate between the grooves of a pair.

Claim 7

A semiconductor laser array in accordance with claim 1 or 2 further comprising a cap epitaxial layer overlying the second confinement layer and of the same conductivity type as the second confinement layer.

Claim 8

A semiconductor laser array according to claim 1 or 2 further comprising an electrically insulating layer overlying the cap layer wherein the insulating layer has openings therethrough extending down to the cap layer over the portion of the substrate between each pair of grooves and electrical contacts to the cap layer in the openings.

Claim 9

A semiconductor injection laser array according to claim 6 further comprising an electrically conducting layer overlying the electrically insulating layer and the portion of the cap layer exposed through the openings in the electrically insulating layer and further comprising an electrically conducting layer overlying the surface of the substrate opposed to the surface containing the grooves.

Claim 10

A semiconductor laser array according to claim 1 or 2 wherein the spacing of a pair of grooves is between about 20 and about 40 micrometers.

Claim 11

A semiconductor laser array according to claim 1 or 2 wherein the center-to-center spacing between pairs of grooves is greater than the spacing between the grooves of a pair.

Claim 12

A semiconductor laser array according to claim 9 wherein the center-to-center spacing between pairs of grooves is between about 20 and 200 micrometers.

Claim 13

A semiconductor laser array according to claim 9 wherein the center-to-center spacing between pairs of grooves is between about 50 and 100 micrometers.