Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
188 words
An improved read-only/read-write semiconductor memory comprising a semiconductor substrate having a body containing dopant atoms of a first conductivity type, a pair of spaced-apart charge storage regions at the surface of said substrate, a bit line at the surface of said substrate spaced apart from said pair of charge storage regions, respective MOSFET transistor gate regions at the surface of said substrate between said bit line and said charge storage regions, and a conductor over said storage regions; the improvement comprising: dopant atoms of a second conductivity type in one of said storage regions, and dopant atoms of said first conductivity type in the other of said storage regions having a greater doping concentration than is in the body of said substrate; and means for applying a read-write mode voltage to said conductor to permit charge to be stored in both of said storage regions, and for applying a read-only mode voltage to said conductor to permit charge to be stored in said one storage region and simultaneously prevent charge from being stored in said other storage region by producing a potential barrier in said other storage region.
Claim 2
Dependent Claim
188 words
An improved read-only/read-write semiconductor memory comprising a semiconductor substrate having a body containing dopant atoms of a first conductivity type, a pair of spaced-apart charge storage regions at the surface of said substrate, a bit line at the surface of said substrate spaced apart from said pair of charge storage regions, respective MOSFET transistor gate regions at the surface of said substrate between said bit line and said charge storage regions, and a conductor over said storage regions; the improvement comprising: dopant atoms of a second conductivity type in one of said storage regions, and dopant atoms of said first conductivity type in the other of said storage regions having a greater doping concentration than is in the body of said substrate; and means for applying a read-write mode voltage to said conductor to permit charge to be stored in both of said storage regions, and for applying a read-only mode voltage to said conductor to permit charge to be stored in said one storage region and simultaneously prevent charge from being stored in said other storage region by producing a potential barrier in said other storage region.
Claim 3
Dependent Claim
28 words
A memory according to claim 1, wherein said dopant atoms of said first conductivity type are P-type, and said dopant atoms of said second conductivity type are N-type.
Claim 4
Dependent Claim
28 words
A memory according to claim 1, wherein said dopant atoms of said first conductivity type are N-type, and said dopant atoms of said second conductivity type are P-type.
Claim 5
Dependent Claim
28 words
A memory according to claim 1, wherein the peak doping concentration of said second conductivity type dopant atoms is at least 1×10 19 atoms per cm 3 .
Claim 6
Dependent Claim
30 words
A memory according to claim 1, wherein said means for applying includes first and second transistor means responsive to respective logic signals for selectively applying said voltages to said conductor.
Claim 7
Dependent Claim
16 words
A memory according to claim 1, wherein said conductor is a patterned layer of polycrystalline silicon.