Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
79 words
A method of front surface metallization and encapsulation for solar cells comprising: (a) providing a transparent plate having inner and outer surfaces; (b) heating said plate so as to soften its said inner surface; (c) pressing a mesh of wires fed from spools into said softened plate inner surface; (d) providing a semiconductor wafer having front and rear semiconductor strata; and (e) bonding said plate inner surface, together with said mesh of wires embedded therein, to said semiconductor wafer.
Claim 2
Independent Claim
79 words
A method of front surface metallization and encapsulation for solar cells comprising: (a) providing a transparent plate having inner and outer surfaces; (b) heating said plate so as to soften its said inner surface; (c) pressing a mesh of wires fed from spools into said softened plate inner surface; (d) providing a semiconductor wafer having front and rear semiconductor strata; and (e) bonding said plate inner surface, together with said mesh of wires embedded therein, to said semiconductor wafer.
Claim 3
Independent Claim
100 words
A method of front surface metallization encapsulation for solar cells comprising: (a) providing a transparent plate having inner and outer surfaces; (b) depositing an anti-reflective coating onto said plate inner surface; (c) heating said plate so as to soften its said inner surface; (c) stretching a mesh of wires fed from wire feeding means over a mandrel and pressing therewith said mesh of wires into said softened plate inner surface; (e) providing a semiconductor wafer having front and rear semiconductor strata; and (f) bonding said plate inner surface, together with said mesh of wires embedded therein, to said semiconductor wafer.
Claim 4
Independent Claim
100 words
A method of front surface metallization encapsulation for solar cells comprising: (a) providing a transparent plate having inner and outer surfaces; (b) depositing an anti-reflective coating onto said plate inner surface; (c) heating said plate so as to soften its said inner surface; (c) stretching a mesh of wires fed from wire feeding means over a mandrel and pressing therewith said mesh of wires into said softened plate inner surface; (e) providing a semiconductor wafer having front and rear semiconductor strata; and (f) bonding said plate inner surface, together with said mesh of wires embedded therein, to said semiconductor wafer.
Claim 5
Dependent Claim
162 words
A continuous method of front surface metallization and encapsulation for solar cells comprising: (a) stretching a plurality of wires over an endless belt; (b) periodically dispensing at least one metallic strip over and normal to said plurality of wires so as to extend over said wires as said wires are periodically advanced by an indexing motion of said endless belt; (c) periodically dispensing a transparent plate onto said plurality of wires and over said one metallic strip; (d) heating said transparent plate; (e) pressing said plurality of wires and said one metallic strip into a softened surface of said plate; (f) periodically dispensing and mating a surface of a semiconductor wafer having a p-n junction with said softened surface of said transparent plate, thereby embedding said plurality of wires and said one metallic strip in said softened surface; and (g) electrostatically bonding said plate surface to said semiconductor surface, with said wires and said strip forming electrical contact with said semiconductor surface.
Claim 6
Dependent Claim
162 words
A continuous method of front surface metallization and encapsulation for solar cells comprising: (a) stretching a plurality of wires over an endless belt; (b) periodically dispensing at least one metallic strip over and normal to said plurality of wires so as to extend over said wires as said wires are periodically advanced by an indexing motion of said endless belt; (c) periodically dispensing a transparent plate onto said plurality of wires and over said one metallic strip; (d) heating said transparent plate; (e) pressing said plurality of wires and said one metallic strip into a softened surface of said plate; (f) periodically dispensing and mating a surface of a semiconductor wafer having a p-n junction with said softened surface of said transparent plate, thereby embedding said plurality of wires and said one metallic strip in said softened surface; and (g) electrostatically bonding said plate surface to said semiconductor surface, with said wires and said strip forming electrical contact with said semiconductor surface.
Claim 7
Dependent Claim
29 words
The continuous method of claim 3 further including applying pressure to force said plate surface to said semiconductor surface during said electrostatic bonding of said surfaces to each other.