Method for manufacturing an I2 L semiconductor device

Claim 1

A method for manufacturing a semiconductor device comprising the steps of: a. forming at least one island region of a first conductivity type surrounded by a field insulation region on a semiconductor layer of said first conductivity type; b. forming a first insulating film on a part of the surface of said first conductivity type island region; c. forming a first region of a second conductivity type in said island region not covered by said first insulating film; d. forming discrete impurity-doped polysilicon layers of said first conductivity type on the surfaces of said first insulating film and said second conductivity type first region, said polysilicon layers crossing said first insulating film and said second conductivity type first region; e. eliminating any exposed parts of said first insulating film after the formation of said polysilicon layers; f. covering said polysilicon layers with individual thick insulating films; g. forming second regions of said second conductivity type by doping an impurity of said second conductivity type into said first conductivity type island region and said second conductivity type first region using as a mask said polysilicon layers covered with said thick insulating films; h. forming third regions of said first conductivity type by diffusing said impurity doped in said polysilicon layers into portions of said first region beneath said polysilicon layers; i. connecting said second regions in said first region, which are not covered with said polysilicon layers, by a conductive layer; and j. depositing a conductive layer on said second region in said island region.

Claim 2

A method for manufacturing a semiconductor device comprising the steps of: a. forming at least one island region of a first conductivity type surrounded by a field insulation region on a semiconductor layer of said first conductivity type; b. forming a first insulating film on a part of the surface of said first conductivity type island region; c. forming a first region of a second conductivity type in said island region not covered by said first insulating film; d. forming discrete impurity-doped polysilicon layers of said first conductivity type on the surfaces of said first insulating film and said second conductivity type first region, said polysilicon layers crossing said first insulating film and said second conductivity type first region; e. eliminating any exposed parts of said first insulating film after the formation of said polysilicon layers; f. covering said polysilicon layers with individual thick insulating films; g. forming second regions of said second conductivity type by doping an impurity of said second conductivity type into said first conductivity type island region and said second conductivity type first region using as a mask said polysilicon layers covered with said thick insulating films; h. forming third regions of said first conductivity type by diffusing said impurity doped in said polysilicon layers into portions of said first region beneath said polysilicon layers; i. connecting said second regions in said first region, which are not covered with said polysilicon layers, by a conductive layer; and j. depositing a conductive layer on said second region in said island region.

Claim 3

A method for manufacturing a semiconductor device comprising the steps of: a. forming at least one island region of a first conductivity type surrounded by a field insulation region on a semiconductor layer of said first conductivity type; b. forming a first insulating film on a part of the surface of said first conductivity type island region; c. forming a second conductivity type internal base region of a switching transistor in said island region not covered by said first insulating film; d. forming discrete impurity-doped polysilicon layers of said first conductivity type on the surfaces of said first insulating film and said internal base region, said polysilicon layers crossing said first insulating film and said internal base region; e. eliminating any exposed parts of said first insulating film after the formation of said polysilicon layers; f. covering said polysilicon layers with individual thick insulating layers; g. forming the emitter and collector regions of an injector transistor and the external base regions of said switching transistor in said island region and said internal base region respectively using said polysilicon layers covered with said thick insulating layers as a mask, and forming collector regions of said switching transistor by diffusing said impurity doped in said polysilicon layers into portions of said internal base region beneath said polysilicon layers; h. connecting said external base regions by a conductive layer; and i. depositing a conductive layer on said emitter region.

Claim 4

A method for manufacturing a semiconductor device comprising the steps of: a. forming at least one island region of a first conductivity type surrounded by a field insulation region on a semiconductor layer of said first conductivity type; b. forming a first insulating film on a part of the surface of said first conductivity type island region; c. forming a second conductivity type internal base region of a switching transistor in said island region not covered by said first insulating film; d. forming discrete impurity-doped polysilicon layers of said first conductivity type on the surfaces of said first insulating film and said internal base region, said polysilicon layers crossing said first insulating film and said internal base region; e. eliminating any exposed parts of said first insulating film after the formation of said polysilicon layers; f. covering said polysilicon layers with individual thick insulating layers; g. forming the emitter and collector regions of an injector transistor and the external base regions of said switching transistor in said island region and said internal base region respectively using said polysilicon layers covered with said thick insulating layers as a mask, and forming collector regions of said switching transistor by diffusing said impurity doped in said polysilicon layers into portions of said internal base region beneath said polysilicon layers; h. connecting said external base regions by a conductive layer; and i. depositing a conductive layer on said emitter region.