US4377755A
Expired / Lapsed
US
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Signal compressor apparatus
Assignee: United States Department of the Air Force
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Filing: 1980-07-15
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Granted: 1983-03-22
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Expires: 2000-07-15
Abstract
Abstract A signal compressor apparatus utilizing a charge coupled device having a charge storage well wherein the charge storage capacity is variable over the integration time of the device. During the minimum charge storage period, the input charge which exceeds an established limit is dumped, thereby providing compression of the input signal.
Inventors
- 👤 William E. Jensen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 08:04
CPC Classifications
G; G11; G11C; G11C19/00; G11C19/28; G11C19/282; G11C19/285; H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/472; H10D44/474
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
300 words
In a charge transfer device, a charge coupled device which comprises a semiconductor substrate with an insulating material deposited thereon and a plurality of gate electrodes provided on or within said insulating material and driving means for driving said plurality of gate electrodes, the improvement comprising a signal compressor means for compressing an input signal wherein a first gate electrode means receives a first fixed bias from said driving means to provide a first potential barrier, a second gate electrode means receives a voltage waveform with a predetermined linear slope from said driving means to provide a variable charge storage well, a third gate electrode means receives a second fixed bias from said driving means to provide a second potential barrier, said second potential barrier being lower than said first potential barrier; and a pair of adjacent gate electrodes next to said third gate electrode means to receive complementary clock pulses from said driving means, one of said pair of adjacent gate electrodes being an output gate which is connected to an output register, the other of said pair of adjacent gate electrodes being a dump gate which is connected to a dump diffusion means for dumping excess charge, said signal compressor means receiving an input charge with a linear charge rate, said input charge passing over said first potential barrier and into said storage well, the excess of said input charge passing over said second potential barrier and through said dump gate electrode to said dump diffusion means during the intitial portion of the integration period, near the end of the integration period, said clock pulses to said pair of adjacent gate electrodes reverses and enables said output gate wherein any excess charge therein is combined with the charge in said storage well and applied to said output register.
Claim 2
Dependent Claim
300 words
In a charge transfer device, a charge coupled device which comprises a semiconductor substrate with an insulating material deposited thereon and a plurality of gate electrodes provided on or within said insulating material and driving means for driving said plurality of gate electrodes, the improvement comprising a signal compressor means for compressing an input signal wherein a first gate electrode means receives a first fixed bias from said driving means to provide a first potential barrier, a second gate electrode means receives a voltage waveform with a predetermined linear slope from said driving means to provide a variable charge storage well, a third gate electrode means receives a second fixed bias from said driving means to provide a second potential barrier, said second potential barrier being lower than said first potential barrier; and a pair of adjacent gate electrodes next to said third gate electrode means to receive complementary clock pulses from said driving means, one of said pair of adjacent gate electrodes being an output gate which is connected to an output register, the other of said pair of adjacent gate electrodes being a dump gate which is connected to a dump diffusion means for dumping excess charge, said signal compressor means receiving an input charge with a linear charge rate, said input charge passing over said first potential barrier and into said storage well, the excess of said input charge passing over said second potential barrier and through said dump gate electrode to said dump diffusion means during the intitial portion of the integration period, near the end of the integration period, said clock pulses to said pair of adjacent gate electrodes reverses and enables said output gate wherein any excess charge therein is combined with the charge in said storage well and applied to said output register.
Claim 3
Dependent Claim
17 words
A signal compressor means as described in claim 1 wherein said voltage waveform is a sawtooth signal.
Claim 4
Dependent Claim
21 words
A signal compressor means as described in claim 2 wherein said sawtooth signal varies linearly from -5 volts to -6 volts.
Claim 5
Dependent Claim
28 words
A signal compressor means as described in claim 2 wherein the peak to peak level of said sawtooth signal determines the breakpoint in said input charge transfer curve.
Claim 6
Dependent Claim
27 words
A signal compressor means as described in claim 1 wherein the duty cycle of said clock pulses to said dump gate determines the amount of charge dumped.
Claim 7
Dependent Claim
28 words
A signal compressor means as described in claim 1 wherein the duty cycle of the said clock pulses to said output gate determines the amount of charge saved.
Claim 8
Dependent Claim
27 words
A signal compressor means as described in claim 1 wherein said first fixed bias is -1 volts DC and said second fixed bias is -4 volts DC.
Claim 9
Dependent Claim
292 words
In an electronic system including a charge coupled device, said charged coupled device having an input and an output, a semiconductor substrate with an insulating material deposited thereon, first, second and third gate electrodes serially arranged between said input and said output and a pair of adjacent gate electrodes between said third gate electrode of said output, the improvement residing in signal compressing means, said signal compressing means comprising signal generation means for driving said gate electrodes and delivering: a first fixed bias to said first gate electrode to provide a first potential barrier, a voltage waveform with a predetermined linear slope to said second gate electrode to provide a variable charge storage well, a second fixed bias to said third gate electrode to provide a second potential barrier, said second potential barrier being lower than said first potential barrier; and complementary clock pulses to said adjacent gate electrodes, one of said pair of adjacent gate electrodes being an output gate which is connected through said output to an output register, the other of said pair of adjacent gate electrodes being a dump gate which is connected to a dump diffusion means, said signal compressing means receiving an input charge with a linear charge rate, said input charge passing over said first potential barrier and into said storage well, the excess of said input charge passing over said second potential barrier and through said dump gate to said dump diffusion means during the initial portion of the integration period, near the end of the integration period, said clock pulses to said pair of adjacent gate electrodes reverses and enables said output gate wherein any excess charge therein is combined with the charge in said storage well and applied to said output register.
Claim 10
Dependent Claim
292 words
In an electronic system including a charge coupled device, said charged coupled device having an input and an output, a semiconductor substrate with an insulating material deposited thereon, first, second and third gate electrodes serially arranged between said input and said output and a pair of adjacent gate electrodes between said third gate electrode of said output, the improvement residing in signal compressing means, said signal compressing means comprising signal generation means for driving said gate electrodes and delivering: a first fixed bias to said first gate electrode to provide a first potential barrier, a voltage waveform with a predetermined linear slope to said second gate electrode to provide a variable charge storage well, a second fixed bias to said third gate electrode to provide a second potential barrier, said second potential barrier being lower than said first potential barrier; and complementary clock pulses to said adjacent gate electrodes, one of said pair of adjacent gate electrodes being an output gate which is connected through said output to an output register, the other of said pair of adjacent gate electrodes being a dump gate which is connected to a dump diffusion means, said signal compressing means receiving an input charge with a linear charge rate, said input charge passing over said first potential barrier and into said storage well, the excess of said input charge passing over said second potential barrier and through said dump gate to said dump diffusion means during the initial portion of the integration period, near the end of the integration period, said clock pulses to said pair of adjacent gate electrodes reverses and enables said output gate wherein any excess charge therein is combined with the charge in said storage well and applied to said output register.
References Cited (Backward Citations)
US3953733A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-03-21 | 1986-09-20 | 1987-03-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-03-21 | 1990-09-20 | 1991-03-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-03-21 | 1994-09-20 | 1995-03-22 | $7700.00 | Window Closed / Lapsed |