US4376138A
Expired / Lapsed
US
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Optical waveguides in InGaAsP and InP
Assignee: AT&T Inc
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Filing: 1982-01-04
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Granted: 1983-03-08
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Expires: 2002-01-04
Abstract
Abstract Optical waveguides are formed in semiconductors, for example, InP and InGaAsP, by indiffusion of selected metal atoms.
Inventors
- 👤 Rodney C. Alferness
- 👤 Ivan P. Kaminow
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:06
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/13; G02B6/134; G02B6/1342; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/918
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
126 words
Method for manufacturing an optical device comprising an optical waveguide in a semiconductor material, the method comprising (a) depositing a patterned processing layer on a surface of said semiconductor, thereby defining the waveguiding region, (b) maintaining the semiconductor material carrying the processing layer at a temperature of at least 400° C. for at least about one hour, and (c) contacting during at least part of the time of step (b) at least a part of the semiconductor carrying the processing layer with metal atoms, where the metal is selected from the group consisting of Si, Ge, Sn, Te, Se, As, P, Sb, Cd, Zn, In, Ga, Al, Fe, Cr, Cu, Ag, and Au whereby said metal atoms diffuse into said material thereby defining an optical waveguide.
Claim 2
Dependent Claim
126 words
Method for manufacturing an optical device comprising an optical waveguide in a semiconductor material, the method comprising (a) depositing a patterned processing layer on a surface of said semiconductor, thereby defining the waveguiding region, (b) maintaining the semiconductor material carrying the processing layer at a temperature of at least 400° C. for at least about one hour, and (c) contacting during at least part of the time of step (b) at least a part of the semiconductor carrying the processing layer with metal atoms, where the metal is selected from the group consisting of Si, Ge, Sn, Te, Se, As, P, Sb, Cd, Zn, In, Ga, Al, Fe, Cr, Cu, Ag, and Au whereby said metal atoms diffuse into said material thereby defining an optical waveguide.
Claim 3
Dependent Claim
30 words
A method as recited in claim 1 in which said optical device further comprises means for injecting radiation into said waveguide and means for utilizing said radiation from said waveguide.
Claim 4
Dependent Claim
23 words
Method of claim 1 or 2 wherein said semiconductor consists essentially of one member selected from the group consisting of InP and InGaAsP.
Claim 5
Dependent Claim
19 words
Method of claim 3 in which said maintaining step is at a temperature between 400° C. and 600° C.
Claim 6
Dependent Claim
26 words
Method of claim 4 wherein the patterned processing layer is a metal layer, and the metal atoms of step (c) are derived from said metal layer.
Claim 7
Dependent Claim
21 words
Method of claim 5 in which said metal atoms are selected from the group consisting of Ge, Au, Fe, and Cr.
Claim 8
Dependent Claim
18 words
Method of claim 6 in which said metal layer has a thickness between 50 Angstroms and 2000 Angstroms.
Claim 9
Dependent Claim
32 words
Method of claim 1 or 2 wherein the patterned processing layer is a non-metallic layer, and the metal atoms of step (c) are derived from a processing atmosphere comprising a metal compound.
Claim 10
Dependent Claim
40 words
Method of claim 1 or 2 wherein said semiconductor material comprises a substrate consisting essentially of InP and an epitaxial layer consisting essentially of InGaAsP, with the refractive index of the epitaxial layer being greater than that of the substrate.
Claim 11
Dependent Claim
27 words
Method of claim 9 where the semiconductor material further comprises a buffer layer consisting essentially of substantially undoped InP disposed between the substrate and the epitaxial layer.
Claim 12
Dependent Claim
19 words
Method of claim 10 in which said maintaining step is at a temperature between 400° C. and 600° C.
Claim 13
Dependent Claim
18 words
Method of claim 11 wherein the waveguiding region is defined by means of a negative patterned processing layer.
Claim 14
Dependent Claim
25 words
Method of claim 12 wherein the processing layer consists essentially of Au or Ge, said layer having a thickness between 50 Angstroms and 2000 Angstroms.
Claim 15
Dependent Claim
18 words
Method of claim 11 wherein the waveguiding region is defined by means of a positive patterned processing layer.
Claim 16
Dependent Claim
25 words
Method of claim 14 wherein the processing layer consists essentially of Fe or Cr, said layer having a thickness between 50 Angstroms and 2000 Angstroms.
Claim 17
Dependent Claim
21 words
Method of claim 15 wherein the substrate has a free carrier density of at least about 10 18 cm -3 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-03-07 | 1986-09-06 | 1987-03-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-03-07 | 1990-09-06 | 1991-03-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-03-07 | 1994-09-06 | 1995-03-08 | $7700.00 | Window Closed / Lapsed |