US4374431A
Expired / Lapsed
US
⏱️ 0.0 years remaining
I2 L Semiconductor memory circuit device
Assignee: Fujitsu Ltd
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Filing: 1980-11-26
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Granted: 1983-02-15
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Expires: 2000-11-26
Abstract
Abstract A semiconductor memory circuit device is disclosed. The semiconductor memory circuit device is conventionally comprised of a plurality of memory-cell arrays. Each of the memory-cell arrays is conventionally provided with a plurality of IIL memory cells, a pair of positive word line and negative work line and further a plurality of bit lines. In the semiconductor memory circuit device, at least one means for discharging electric charges is newly incorporated with each negative word line. Said means becomes active only when the corresponding memory-cell array changes from selection status to non-selection status.
Inventors
- 👤 Chikai Ono
- 👤 Kazuhiro Toyoda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:12
CPC Classifications
H; H03; H03K; H03K3/00; H03K3/02; H03K3/26; H03K3/28; H03K3/281; H03K3/286; H03K3/288; G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/411; G11C11/4113; G11C11/4116; G11C11/413; G11C11/414; G11C11/415; G11C11/416; G11C5/00; G11C5/06; G11C5/063; H10; H10D; H10D84/00; H10D84/60; H10D84/65
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
236 words
A semiconductor memory device fabricated on a bulk semiconductor base having parasitic capacitance, comprising: a plurality of memory-cell arrays, each of the memory-cell arrays extending in a first direction and including a plurality of IIL (integrated injection logic) memory cells for storing data arranged in the first direction, the memory-cell arrays being arranged with a specified pitch in a second direction perpendicular to the first direction; word line pairs arranged in the first direction, each pair having first and second word lines, and each word line having a selection and non-selection status and each of the second word lines comprising said bulk; the memory-cell arrays respectively, operatively connected to a corresponding one of said pairs of word lines; a plurality of pairs of bit lines extending in the second direction and operatively connected to each of said plurality of memory cell arrays; hold-current sources respectively, operatively connected to a corresponding one of said second word lines, for holding the data stored in the IIL memory cells; at least one discharging path, operatively connected to each of the second word lines; and constant-current sources, operatively connected to said discharging path, for providing a discharging current, in accordance with said parasitic capacitance existing in the bulk and along the word lines, for the second word lines changing from said selection status to said non-selection status, said parasitic capacitance being discharged through the constant-current source via the discharging path.
Claim 2
Dependent Claim
236 words
A semiconductor memory device fabricated on a bulk semiconductor base having parasitic capacitance, comprising: a plurality of memory-cell arrays, each of the memory-cell arrays extending in a first direction and including a plurality of IIL (integrated injection logic) memory cells for storing data arranged in the first direction, the memory-cell arrays being arranged with a specified pitch in a second direction perpendicular to the first direction; word line pairs arranged in the first direction, each pair having first and second word lines, and each word line having a selection and non-selection status and each of the second word lines comprising said bulk; the memory-cell arrays respectively, operatively connected to a corresponding one of said pairs of word lines; a plurality of pairs of bit lines extending in the second direction and operatively connected to each of said plurality of memory cell arrays; hold-current sources respectively, operatively connected to a corresponding one of said second word lines, for holding the data stored in the IIL memory cells; at least one discharging path, operatively connected to each of the second word lines; and constant-current sources, operatively connected to said discharging path, for providing a discharging current, in accordance with said parasitic capacitance existing in the bulk and along the word lines, for the second word lines changing from said selection status to said non-selection status, said parasitic capacitance being discharged through the constant-current source via the discharging path.
Claim 3
Dependent Claim
23 words
A device as set forth in claim 1, wherein said discharging path is located in the center of each of the memory-cell arrays.
Claim 4
Dependent Claim
24 words
A device as set forth in claim 1, further comprising a plurality of the discharging paths uniformly distributed on each of the memory-cell arrays.
Claim 5
Dependent Claim
33 words
A device as set forth in claim 2 or 3, further comprising means for smoothing an irregular portion created where the discharging path is operatively connected to each of the second word lines.
Claim 6
Dependent Claim
192 words
A device as set forth in claim 4, having a read and a write operation, wherein each of the IIL memory cells comprises: first and second transistors, interconnected with each other and connected to the corresponding one of said second word lines, for storing data, third and fourth transistors, connected to the corresponding one of said first word lines, acting as load transistors for the first and second transistors, respectively, and fifth and sixth transistors, each having a specified position on said bulk and connected to the corresponding one of said word second lines, to a corresponding one of the bit line pairs, and further acting as buffer transistors for achieving read and write operations, and wherein the means for smoothing the irregular portion comprises dummy cells, each including transistors corresponding to the third and fourth transistors and one of the first and second transistors, wherein said device further comprises a junction circuit having two terminals and operatively connected between the constant-current source and the dummy cell, wherein the junction circuit conducts current from a corresponding one of the second word lines which changes from the selection status to the non-selection status.
Claim 7
Dependent Claim
39 words
A device as set forth in claim 5, wherein the junction circuit comprises a transistor having a collector operatively connected to a corresponding one of the word second lines and, an emitter operatively connected to the discharging path (DP).
Claim 8
Dependent Claim
36 words
A device as set forth in claim 5, wherein the junction circuit comprises a diode having an anode connected to a corresponding one of the second word lines, and a cathode connected to the discharging path.
Claim 9
Dependent Claim
29 words
A device as set forth in claim 5, wherein the junction circuit comprises a resistor connected between a corresponding one of the second word lines and the discharging path.
Claim 10
Dependent Claim
33 words
A device as set forth in claim 5, wherein the junction circuit comprises a series connected diode and resistor, connected between a corresponding one of the second word lines and the discharging path.
Claim 11
Dependent Claim
32 words
A device as set forth in claim 5, wherein the junction circuit is located at a position corresponding to the position of the fifth transistor in each of the IIL memory cells.
Claim 12
Dependent Claim
32 words
A device as set forth in claim 5, wherein the hold-current source is located at a position corresponding to the position of the sixth transistor in each of the IIL memory cells.
Claim 13
Dependent Claim
41 words
A device as set forth in claim 6, wherein one terminal of each of the junction members is connected to the corresponding second word line and the other terminal of each of the junction members is connected to the discharging path.
Claim 14
Dependent Claim
39 words
A device as set forth in claim 12, wherein the dummy cells and junction members, are located on respective memory-cell arrays such that the dummy cells and the junction circuits are arranged along straight lines in said second direction.
Claim 15
Dependent Claim
36 words
A device as set forth in claim 13, wherein each of the discharging paths is distributed along a respective straight line in a direction being parallel to the direction in which the bit lines are distributed.
Claim 16
Dependent Claim
41 words
A device as set forth in claim 7, wherein one terminal of each of the junction members is connected to the corresponding second word line and the other terminal of each of the junction members is connected to the discharging path.
Claim 17
Dependent Claim
41 words
A device as set forth in claim 8, wherein one terminal of each of the junction members is connected to the corresponding second word line and the other terminal of each of the junction members is connected to the discharging path.
Claim 18
Dependent Claim
41 words
A device as set forth in claim 9, wherein one terminal of each of the junction members is connected to the corresponding second word line and the other terminal of each of the junction members is connected to the discharging path.
Claim 19
Dependent Claim
39 words
A device as set forth in claim 15, wherein the dummy cells and junction members are located on respective memory-cell arrays such that the dummy cells and the junction circuits are arranged along straight lines in said second direction.
Claim 20
Dependent Claim
39 words
A device as set forth in claim 16, wherein the dummy cells and junction members are located on respective memory-cell arrays such that the dummy cells and the junction circuits are arranged along straight lines in said second direction.
Claim 21
Dependent Claim
39 words
A device as set forth in claim 17, wherein the dummy cells and junction members are located on respective memory-cell arrays such that the dummy cells and the junction circuits are arranged along straight lines in said second direction.
Claim 22
Dependent Claim
36 words
A device as set forth in claim 18, wherein each of the discharging paths is distributed along a respective straight line in a direction being parallel to the direction in which the bit lines are distributed.
Claim 23
Dependent Claim
36 words
A device as set forth in claim 19, wherein each of the discharging paths is distributed along a respective straight line in a direction being parallel to the direction in which the bit lines are distributed.
Claim 24
Dependent Claim
36 words
A device as set forth in claim 20, wherein each of the discharging paths is distributed along a respective straight line in a direction being parallel to the direction in which the bit lines are distributed.
References Cited (Backward Citations)
US4228525A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-02-14 | 1986-08-16 | 1987-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-02-14 | 1990-08-16 | 1991-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-02-14 | 1994-08-16 | 1995-02-15 | $7700.00 | Window Closed / Lapsed |