US4373399A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor strain gauge transducer
Assignee: Individual
•
Filing: 1981-02-05
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Granted: 1983-02-15
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Expires: 2001-02-05
Abstract
Abstract A semiconductor strain gauge transducer comprising a sensitive element which is a monocrystal sapphire substrate carrying epitaxial silicon strain gauges of p-type conduction. The hole concentration in the silicon is 3.5·10 19 to 3·10 20 cm -3 . The silicon strain gauges are interconnected to form a bridge or differential strain-sensitive circuit.
Inventors
- 👤 Alexei V. Beloglazov
- 👤 Vladimir E. Beiden
- 👤 Georgy G. Iordan
- 👤 Vladimir M. Karneev
- 👤 Vladimir S. Papkov
- 👤 Vladimir M. Stuchebnikov
- 👤 Viktor V. Khasikov
- 👤 Mikhail V. Surovikov
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 05:25
CPC Classifications
G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0051; G01L9/0052; G01L9/0055
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
68 words
A semiconductor strain gauge transducer comprising: a sensitive element including a monocrystal sapphire substrate; epitaxial strain gauges made of silicon resistors of p-type conduction, arranged on said substrate and interconnected into a bridge or differential strain-sensitive circuit; a signal conversion unit whose input is connected to the output of said strain-sensitive circuit, wherein the hole concentration in the silicon is 3.5·10 19 to 3·10 20 cm -3 .
Claim 2
Dependent Claim
68 words
A semiconductor strain gauge transducer comprising: a sensitive element including a monocrystal sapphire substrate; epitaxial strain gauges made of silicon resistors of p-type conduction, arranged on said substrate and interconnected into a bridge or differential strain-sensitive circuit; a signal conversion unit whose input is connected to the output of said strain-sensitive circuit, wherein the hole concentration in the silicon is 3.5·10 19 to 3·10 20 cm -3 .
Claim 3
Dependent Claim
40 words
A semiconductor strain gauge transducer as claimed in claim 1, wherein the power source for said strain-sensitive circuit is a d.c. current source, and the hole concentration in the silicon of said strain-sensitive resistors is (3.5+9)·10 19 cm -3 .
Claim 4
Dependent Claim
134 words
A semiconductor strain gauge transducer as claimed in claim 2, further comprising: an additional strain-sensitive circuit similar to said basic strain-sensitive circuit, the power source for said additional strain-sensitive circuit being a d.c. voltage source, and the hole concentration in the silicon of the strain gauges of said additional strain-sensitive circuit being (1.8+3)·10 20 cm -3 ; a relay-type switching element connected to the outputs of the two strain-sensitive circuits and to the input of said signal conversion unit; a control circuit of said switching element; and an epitaxial thermistor connected to said control circuit of said switching element, said epitaxial thermistor being made from silicon with a hole concentration of 3.5·10 19 to 3·10 20 cm -3 and located in a non-strained zone or oriented in the strain-insensitive direction of said sapphire substrate.
Claim 5
Dependent Claim
40 words
A semiconductor strain gauge transducer as claimed in claim 1, wherein the power source for said strain-sensitive circuit is a d.c. voltage source, and the hole concentration in the silicon of said strain-sensitive resistors is (1.8+3)·10 20 cm -3 .
References Cited (Backward Citations)
US3916365A
Cited
US4191057A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-02-14 | 1986-08-16 | 1987-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-02-14 | 1990-08-16 | 1991-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-02-14 | 1994-08-16 | 1995-02-15 | $7700.00 | Window Closed / Lapsed |