US4373165A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Very high density punch-through read-only-memory
Assignee: Texas Instruments Inc
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Filing: 1981-09-14
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Granted: 1983-02-08
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Expires: 2001-09-14
Abstract
Abstract A semiconductor read-only-memory (ROM) device having an array of punch-through devices as memory cells. The cells are formed at the crossing points of two pluralities of parallel elongated regions, the two pluralities being perpendicular to each other. One plurality is located in subsurface regions of a semiconductor body and is of a conductivity type opposite that of the surrounding body. The other plurality is located at a surface of the semiconductor body and is of the same conductivity type as the subsurface plurality. The device is programmed by implanting impurities of the same conductivity type as the semiconductor body between selected crossing points. No contacts exists in the array.
Inventors
- 👤 Al F. Tasch, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:46
CPC Classifications
H; H10; H10B; H10B20/00; H10B20/10; Y; Y10; Y10S; Y10S257/00; Y10S257/926
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
83 words
A semiconductor device comprising: a body of monocrystalline semiconductor of one conductivity type having a plurality of parallel, elongated, surface regions of opposite conductivity type; a plurality of elongated, subsurface parallel regions of opposite conductivity type, perpendicular to said surface plurality and spaced therefrom to form a criss-cross pattern; and a subsurface plurality of regions of said one conductivity type located between selected crossing points of said pattern, said respective subsurface regions each being more heavily doped than said body of monocrystalline semiconductor.
Claim 2
Dependent Claim
83 words
A semiconductor device comprising: a body of monocrystalline semiconductor of one conductivity type having a plurality of parallel, elongated, surface regions of opposite conductivity type; a plurality of elongated, subsurface parallel regions of opposite conductivity type, perpendicular to said surface plurality and spaced therefrom to form a criss-cross pattern; and a subsurface plurality of regions of said one conductivity type located between selected crossing points of said pattern, said respective subsurface regions each being more heavily doped than said body of monocrystalline semiconductor.
Claim 3
Dependent Claim
15 words
A semiconductor device according to claim 1 further including an insulating layer upon said device.
Claim 4
Dependent Claim
25 words
A semiconductor device according to claim 1 wherein said body and said subsurface plurality are p-type and said surface and subsurface parallel pluralities are n-type.
Claim 5
Dependent Claim
17 words
A semiconductor device according to claim 1 further including metal silicide regions in said surface parallel plurality.
Claim 6
Dependent Claim
15 words
A semiconductor device according to claim 4 further including an insulating layer upon said device.
Claim 7
Dependent Claim
25 words
A semiconductor device according to claim 4 wherein said body and said subsurface plurality are p-type and said surface and subsurface parallel pluralities are n-type.
Claim 8
Dependent Claim
15 words
A semiconductor device according to claim 4 wherein said metal silicide regions are platinum silicide.
References Cited (Backward Citations)
US4254427A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-02-07 | 1986-08-09 | 1987-02-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-02-07 | 1990-08-09 | 1991-02-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-02-07 | 1994-08-09 | 1995-02-08 | $7700.00 | Window Closed / Lapsed |