US4370640A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metal-semiconductor thermal sensor
Assignee: AT&T Inc
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Filing: 1980-09-10
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Granted: 1983-01-25
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Expires: 2000-09-10
Abstract
Abstract A metal-semiconductor variable resistance temperature or infrared energy measuring device is described, along with a method for making it. The device may be made as a thin film, and typically operates over the range of at least 1 degree K to 300 degrees K. The device typically has an approximately 1/T temperature dependence of resistance. In one embodiment, gold is used as the metal, and germanium the semiconductor. The metal subsists as metallic or intermetallic globules dispersed in a semiconductor matrix, and may be formed by heating a metastable metal-semiconductor alloy until the metal precipitates out as described.
Inventors
- 👤 Robert C. Dynes
- 👤 John M. Mochel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 14:08
CPC Classifications
G; G01; G01J; G01J5/00; G01J5/10; G01J5/20
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
68 words
A thermal energy sensing device comprising a metal-semiconductor body in contact with spaced electrical conducting leads, characterized in that said body comprises regions selected from the group consisting of metallic and intermetallic dispersed in a semiconductor matrix, wherein the resistivity of said body is greater than 300 microhm-centimeters at 20 degrees C., and the conductivity of said body is less than 50 (ohm-cm) -1 at 4.2 degrees kelvin.
Claim 2
Dependent Claim
68 words
A thermal energy sensing device comprising a metal-semiconductor body in contact with spaced electrical conducting leads, characterized in that said body comprises regions selected from the group consisting of metallic and intermetallic dispersed in a semiconductor matrix, wherein the resistivity of said body is greater than 300 microhm-centimeters at 20 degrees C., and the conductivity of said body is less than 50 (ohm-cm) -1 at 4.2 degrees kelvin.
Claim 3
Dependent Claim
13 words
The device of claim 1 further characterized in that said semiconductor is germanium.
Claim 4
Dependent Claim
26 words
The device of claim 2 further characterized in that said regions comprise at least one metal chosen from the group consisting of gold, silver, and copper.
Claim 5
Dependent Claim
18 words
The device of claim 3 further characterized in that said body comprises 16 to 25 atomic percent gold.
Claim 6
Dependent Claim
13 words
The device of claim 1 further characterized in that said semiconductor is silicon.
Claim 7
Dependent Claim
26 words
The device of claim 5 further characterized in that said regions comprise at least one metal chosen from the group consisting of gold, silver, and copper.
Claim 8
Dependent Claim
18 words
The device of claim 1 further characterized in that said regions have diameters of less than 100 nanometers.
Claim 9
Dependent Claim
23 words
The device of claim 1 further characterized in that the conductivity of said body is substantially non-zero at temperatures above 50 degrees kelvin.
Claim 10
Dependent Claim
23 words
The device of claim 1 further characterized in that said matrix of said semiconductor substantially comprises microcrystallites at least 1.0 nanometers in diameter.
Claim 11
Dependent Claim
20 words
The device of claim 1 further characterized in that said body has a thickness of not more than 10 micrometers
Claim 12
Independent Claim
150 words
A method of making a variable resistance thermal energy sensing device by steps comprising depositing a metal-semiconductor body on a substrate and providing spaced electrical conducting leads in contact with said body, characterized in that said body is deposited on said substrate as a metastable homogeneous alloy of said metal and said semiconductor, with the concentration of said metal in said semiconductor being greater than the equilibrium solubility limit of said metal in said semiconductor, and further characterized by heating said body until said metal at least partially precipitates out to form regions selected from the group consisting of metallic and intermetallic having diameters of at least 1.0 nanometers dispersed in a matrix of said semiconductor, wherein the resistivity of said body after said heating is greater than 300 microhm-centimeters at 20 degrees C., and the conductivity of said body is less than 50 (ohm-cm) -1 at 4.2 degrees kelvin.
Claim 13
Independent Claim
150 words
A method of making a variable resistance thermal energy sensing device by steps comprising depositing a metal-semiconductor body on a substrate and providing spaced electrical conducting leads in contact with said body, characterized in that said body is deposited on said substrate as a metastable homogeneous alloy of said metal and said semiconductor, with the concentration of said metal in said semiconductor being greater than the equilibrium solubility limit of said metal in said semiconductor, and further characterized by heating said body until said metal at least partially precipitates out to form regions selected from the group consisting of metallic and intermetallic having diameters of at least 1.0 nanometers dispersed in a matrix of said semiconductor, wherein the resistivity of said body after said heating is greater than 300 microhm-centimeters at 20 degrees C., and the conductivity of said body is less than 50 (ohm-cm) -1 at 4.2 degrees kelvin.
Claim 14
Dependent Claim
29 words
The method of claim 11 further characterized in that the deposition of said body onto said substrate is accomplished by evaporating said metal and said semiconductor onto said substrate.
Claim 15
Dependent Claim
29 words
The method of claim 11 further characterized in that the deposition of said body onto said substrate is accomplished by sputtering said metal and said semiconductor onto said substrate.
Claim 16
Dependent Claim
27 words
The method of claim 11 further characterized in that said matrix of said semiconductor substantially comprises microcrystallites at least 1.0 nanometers in diameter after said heating step.
Claim 17
Dependent Claim
13 words
The method of claim 11 further characterized in that said semiconductor is germanium.
Claim 18
Dependent Claim
26 words
The method of claim 15 further characterized in that said regions comprise at least one metal chosen from the group consisting of gold, silver, and copper.
Claim 19
Dependent Claim
22 words
The method of claim 16 further characterized in that said regions are gold comprising 16 to 25 atomic percent of said body.
Claim 20
Dependent Claim
13 words
The method of claim 11 further characterized in that said semiconductor is silicon.
Claim 21
Dependent Claim
26 words
The method of claim 18 further characterized in that said regions comprise at least one metal chosen from the group consisting of gold, silver, and copper.
Claim 22
Dependent Claim
18 words
The method of claim 11 further characterized in that said regions have diameters of less than 100 nanometers.
Claim 23
Dependent Claim
26 words
The method of claim 11 further characterized in that the conductivity of said body after said heating is substantially non-zero at temperatures above 50 degrees kelvin.
Claim 24
Dependent Claim
20 words
The method of claim 11 further characterized in that the thickness of said body is not more than 10 micrometers.
Claim 25
Dependent Claim
22 words
The method of claim 11 further characterized in that said heating continues until a substantially steady-state resistivity of said body is obtained.
Claim 26
Dependent Claim
12 words
A thermal energy sensing device produced by the method of claim 11.
Claim 27
Dependent Claim
15 words
The device of claim 1 further characterized in that said semiconductor matrix is substantially amorphous.
Claim 28
Dependent Claim
18 words
The device of claim 1 further characterized in that said regions have diameters of at least 1.0 nanometers.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-01-24 | 1986-07-26 | 1987-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-01-24 | 1990-07-26 | 1991-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-01-24 | 1994-07-26 | 1995-01-25 | $7700.00 | Window Closed / Lapsed |