US4370288A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming self-supporting semiconductor film
Assignee: Motorola Solutions Inc
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Filing: 1980-11-18
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Granted: 1983-01-25
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Expires: 2000-11-18
Abstract
Abstract A process is provided for forming a self-supporting semiconductor film or ribbon. A TESS substrate is prepared from a substrate of refractory material having an expansion coefficient different from the expansion coefficient of the semiconductor material. A colloidal suspension of graphite is applied to the substrate to form a thin layer of loosely adherent graphite particles. Over this layer of graphite is deposited a layer of the semiconductor material, the deposition occurring at an elevated temperature. Upon cooling from the deposition temperature, the differential thermal expansion coefficience causes the shearing at the graphite layer and therefore provides for the easy removal of the semiconductor layer from the substrate.
Inventors
- 👤 M. John Rice, Jr.
- 👤 Ronald N. Legge
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 12:41
CPC Classifications
C; C30; C30B; C30B33/00; C30B25/00; C30B25/02; C30B25/18; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2923; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3206; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
118 words
A process for forming a self-supporting sheet or ribbon of semiconductor material which comprises the steps of: providing a sheet or ribbon substrate or refractory material having an expansion coefficient different from said semiconductor material, said substrate having a surface; coating said substrate including said surface with a layer of graphite; providing a deposition mask near an edge of said surface to limit deposition of said semiconductor material to a portion of said surface interior to said deposition mask; depositing at a first temperature a layer of said semiconductor material overlying said layer of graphite; reducing the temperature to a second temperature lower than said first temperature; and removing said layer of said semiconductor material from said substrate.
Claim 2
Dependent Claim
118 words
A process for forming a self-supporting sheet or ribbon of semiconductor material which comprises the steps of: providing a sheet or ribbon substrate or refractory material having an expansion coefficient different from said semiconductor material, said substrate having a surface; coating said substrate including said surface with a layer of graphite; providing a deposition mask near an edge of said surface to limit deposition of said semiconductor material to a portion of said surface interior to said deposition mask; depositing at a first temperature a layer of said semiconductor material overlying said layer of graphite; reducing the temperature to a second temperature lower than said first temperature; and removing said layer of said semiconductor material from said substrate.
Claim 3
Dependent Claim
111 words
A process for forming a self-supporting sheet or ribbon of silicon which comprises the steps of: providing a sheet or ribbon substrate of refractory material having a surface and having a thermal coefficient of expansion different from silicon; applying a coating of graphite to said substrate, said coating having a thickness of about 10-50 micrometers; providing a deposition mask to limit deposition of silicon to said surface; chemical vapor depositing a layer of silicon on said coating of graphite, said deposition occurring at a temperature of about 900° C. to 1150° C.; terminating said deposition; and lowering the temperature to room temperature to separate said layer of silicon from said substrate.
Claim 4
Dependent Claim
111 words
A process for forming a self-supporting sheet or ribbon of silicon which comprises the steps of: providing a sheet or ribbon substrate of refractory material having a surface and having a thermal coefficient of expansion different from silicon; applying a coating of graphite to said substrate, said coating having a thickness of about 10-50 micrometers; providing a deposition mask to limit deposition of silicon to said surface; chemical vapor depositing a layer of silicon on said coating of graphite, said deposition occurring at a temperature of about 900° C. to 1150° C.; terminating said deposition; and lowering the temperature to room temperature to separate said layer of silicon from said substrate.
Claim 5
Dependent Claim
111 words
A process for forming a self-supporting sheet or ribbon of semiconductor material which comprises the steps of: providing a sheet or ribbon substrate of refractory material having an expansion coefficient different from said semiconductor material, said substrate having edges and a surface; coating said surface of said substrate with graphite; providing masking means to prevent deposition of said semiconductor material on said edges of said substrate; heating said substrate to a first elevated temperature and depositing a layer of said semiconductor material on said graphite; reducing the temperature of said substrate to a second temperature lower than said first temperature; and removing said layer of said semiconductor material from said substrate.
Claim 6
Dependent Claim
111 words
A process for forming a self-supporting sheet or ribbon of semiconductor material which comprises the steps of: providing a sheet or ribbon substrate of refractory material having an expansion coefficient different from said semiconductor material, said substrate having edges and a surface; coating said surface of said substrate with graphite; providing masking means to prevent deposition of said semiconductor material on said edges of said substrate; heating said substrate to a first elevated temperature and depositing a layer of said semiconductor material on said graphite; reducing the temperature of said substrate to a second temperature lower than said first temperature; and removing said layer of said semiconductor material from said substrate.
Claim 7
Dependent Claim
24 words
The process of claim 1 wherein said refractory material is selected from the group consisting of mullite, alumina, fused silica, molybdenum, tungsten, and graphite.
Claim 8
Dependent Claim
22 words
The process of claim 1 wherein said layer of graphite is applied from a colloidal suspension of graphite in a volatile medium.
Claim 9
Dependent Claim
14 words
The process of claim 1 wherein said step of depositing comprises chemical vapor deposition.
Claim 10
Dependent Claim
16 words
The process of claim 6 wherein said step of depositing comprises plasma aided chemical vapor deposition.
Claim 11
Dependent Claim
11 words
The process of claim 6 wherein said semiconductor material comprises silicon.
Claim 12
Dependent Claim
21 words
The process of claim 8 wherein said first temperature is in the range of about 900° C. to about 1150° C.
Claim 13
Dependent Claim
22 words
The process of claim 2 further comprising the step of doping said layer of silicon during said step of chemical vapor depositing.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-01-24 | 1986-07-26 | 1987-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-01-24 | 1990-07-26 | 1991-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-01-24 | 1994-07-26 | 1995-01-25 | $7700.00 | Window Closed / Lapsed |