US4370158A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Heat-treating method for semiconductor components
Assignee: Heraeus Quarzschmelze GmbH
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Filing: 1981-01-16
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Granted: 1983-01-25
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Expires: 2001-01-16
Abstract
Abstract An improved method for the heat treatment of quartz-glass tubes at temperatures above 1200° C. is disclosed wherein a pressure is maintained within the glass tube which is 3 to 110 mm Hg higher than the pressure on the external surface of the quartz tube over the heated area of the tube for at least the length of time that a temperature of 1200° C. is exceeded. The process is particularly useful for the treatment of quartz-glass tubes within which silicon wafers are disposed for the purpose of diffusing doping agent into silicon wafers or of depositing doped epitaxial layers on silicon wafers.
Inventors
- 👤 Karl A. Schulke
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 10:19
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/06; C30B31/10; C30B31/18; H; H10; H10P; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
82 words
A method of heat-treating, at temperatures above 1200° C., semiconductor components which are introduced into a quartz-glass tube, a gas stream being conducted through the quartz-glass tube, wherein there is maintained in the interior of the quartz-glass tube, at least for the length of time that the temperature of 1200° C. is exceeded, a pressure which is from 3 to 110 mm Hg higher than the pressure on the external surface of the quartz-glass tube over the heated area of the tube.
Claim 2
Independent Claim
82 words
A method of heat-treating, at temperatures above 1200° C., semiconductor components which are introduced into a quartz-glass tube, a gas stream being conducted through the quartz-glass tube, wherein there is maintained in the interior of the quartz-glass tube, at least for the length of time that the temperature of 1200° C. is exceeded, a pressure which is from 3 to 110 mm Hg higher than the pressure on the external surface of the quartz-glass tube over the heated area of the tube.
Claim 3
Dependent Claim
36 words
A method according to claim 1 wherein the internal pressure which is maintained in the quartz-glass tube is from 4 to 16 mm Hg higher than the pressure on the external surface of the quartz-glass tube.
Claim 4
Dependent Claim
23 words
A method according to claim 1 or claim 2 wherein quartz-glass tubes are employed whose external surface has been given a shape-retention treatment.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-01-24 | 1986-07-26 | 1987-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-01-24 | 1990-07-26 | 1991-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-01-24 | 1994-07-26 | 1995-01-25 | $7700.00 | Window Closed / Lapsed |