US4368480A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Multiplexing of chemically responsive FETs
Assignee: Massachusetts Institute of Technology
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Filing: 1979-12-17
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Granted: 1983-01-11
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Expires: 1999-12-17
Abstract
Abstract Logic elements such as inverters, NAND-gates and NOR-gates that include charge-flow transistors and systems that include such logic elements, and oscillators that include such logic elements. A basic logic element includes a charge-flow transistor and a load element, in combination, the load element being connected to either the source or the drain of the charge-flow transistor.
Inventors
- 👤 Stephen D. Senturia
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 16:48
CPC Classifications
G; G01; G01N; G01N27/00; G01N27/26; G01N27/403; G01N27/414; G01N27/4148; H; H03; H03K; H03K19/00; H03K19/02; H03K19/08; H03K19/094; H03K3/00; H03K3/02; H03K3/353; H03K3/354; H03K3/356; H03K3/356017; H10; H10D; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/60; H10D64/66; H10D64/667; H10D64/671; H10D84/00; H10D84/80; H10D84/82; H10D84/83
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
86 words
A sensor circuit comprising, in combination, at least two charge flow transistors, each transistor comprising: (a) a semiconductor substrate; (b) a drain region; (c) a source region; (d) a gapped gate electrode; and (e) a thin-film material, said transistors each having a TURN-ON time determined primarily by the conductance of the said film materials and said transistors are connected in series, drain to source, whereby coupling the charge-flow transistors as logic elements permits changes in the ambient environment which affect said film materials to be monitored.
Claim 2
Dependent Claim
86 words
A sensor circuit comprising, in combination, at least two charge flow transistors, each transistor comprising: (a) a semiconductor substrate; (b) a drain region; (c) a source region; (d) a gapped gate electrode; and (e) a thin-film material, said transistors each having a TURN-ON time determined primarily by the conductance of the said film materials and said transistors are connected in series, drain to source, whereby coupling the charge-flow transistors as logic elements permits changes in the ambient environment which affect said film materials to be monitored.
Claim 3
Dependent Claim
87 words
A sensor circuit comprising, in combination, at least two charge flow transistors, each transistor comprising: (a) a semiconductor substrate; (b) a drain region; (c) a source region; (d) a gapped gate electrode; and (e) a thin-film material said transistors each having a TURN-ON time determined primarily by the conductance of the said film materials and said transistors are connected in parallel, source to source, whereby coupling the charge flow transistors as logic elements permits changes in the ambient environment which affect said film materials to be monitored.
Claim 4
Dependent Claim
87 words
A sensor circuit comprising, in combination, at least two charge flow transistors, each transistor comprising: (a) a semiconductor substrate; (b) a drain region; (c) a source region; (d) a gapped gate electrode; and (e) a thin-film material said transistors each having a TURN-ON time determined primarily by the conductance of the said film materials and said transistors are connected in parallel, source to source, whereby coupling the charge flow transistors as logic elements permits changes in the ambient environment which affect said film materials to be monitored.
Claim 5
Dependent Claim
105 words
A sensor circuit comprising, in combination, a plurality of charge flow transistors, each transistor comprising: (a) a semiconductor substrate; (b) a drain region; (c) a source region; (d) a gapped gate electrode; and (e) a thin-film material said transistors each having a TURN-ON time determined primarily by the conductance of the said film materials and at least two of said transistors are connected in series, drain to source, and at least two of said transistors are connected in parallel source to source, whereby coupling the charge flow transistors as logic elements permits changes in the ambient environment which affect said film materials to be monitored.
Claim 6
Dependent Claim
105 words
A sensor circuit comprising, in combination, a plurality of charge flow transistors, each transistor comprising: (a) a semiconductor substrate; (b) a drain region; (c) a source region; (d) a gapped gate electrode; and (e) a thin-film material said transistors each having a TURN-ON time determined primarily by the conductance of the said film materials and at least two of said transistors are connected in series, drain to source, and at least two of said transistors are connected in parallel source to source, whereby coupling the charge flow transistors as logic elements permits changes in the ambient environment which affect said film materials to be monitored.
References Cited (Backward Citations)
US4158807A
Cited
US4209796A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-01-10 | 1986-07-12 | 1987-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-01-10 | 1990-07-12 | 1991-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-01-10 | 1994-07-12 | 1995-01-11 | $7700.00 | Window Closed / Lapsed |