US4368385A
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Optoelectronic switches
Assignee: NTT Inc
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Filing: 1980-12-12
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Granted: 1983-01-11
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Expires: 2000-12-12
Abstract
Abstract In an optoelectronic switch, a photodiode is used as an optical-to-electrical converter in which a first semiconductor including a p-n junction is combined with a second semiconductor having a narrower energy band gap than the first semiconductor to form a heterojunction. When supplied with a light signal modulated by an electrical signal, the photodiode becomes ON or OFF depending upon the magnitude of a reverse bias voltage applied to said photodiode. A source for applying the bias voltage to the photodiode comprises two voltage sources of the same polarity or a single voltage source. The optoelectronic switch, has a high isolation ratio and broad transmission bandwidth, consumes little electrical power and produces low cross-talk levels when used in switching arrays.
Inventors
- 👤 Hiroshi Kanbe
- 👤 Elmer H. Hara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 23:16
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/24; H03; H03K; H03K17/00; H03K17/51; H03K17/78; H10F55/00; H10F55/20; H10F55/25
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
95 words
An optoelectronic switch comprising: light source means for producing a light signal modulated by an electric signal to be switched; optical-to-electrical converting means disposed to receive the light signal emitted by said light source means, and bias source means for applying reverse bias to said optical-to-electrical converting means to render ON and OFF the same; said optical-to-electrical converting means being constituted by a photodiode formed by a first semiconductor having therein a p-n junction and a second semiconductor having a smaller energy band gap than said first semiconductor, and combined therewith to form a heterojunction.
Claim 2
Dependent Claim
95 words
An optoelectronic switch comprising: light source means for producing a light signal modulated by an electric signal to be switched; optical-to-electrical converting means disposed to receive the light signal emitted by said light source means, and bias source means for applying reverse bias to said optical-to-electrical converting means to render ON and OFF the same; said optical-to-electrical converting means being constituted by a photodiode formed by a first semiconductor having therein a p-n junction and a second semiconductor having a smaller energy band gap than said first semiconductor, and combined therewith to form a heterojunction.
Claim 3
Dependent Claim
52 words
The optoelectronic switch according to claim 1 wherein said bias source means comprises at least one bias source, and control means interposed between said bias source and said optical-to-electrical converting means for applying a reverse or zero bias voltage to said optical-to-electrical converting means to turn ON or OFF the said switch.
Claim 4
Dependent Claim
81 words
The optoelectronic switch according to claim 2 wherein said bias source is made up of two sources having different voltages and said control means performs first and second control operations, said first control operation connecting one of the sources which applies a shallow reverse bias voltage to said optical-to-electrical converting means to render OFF said switch, and said second control operation connecting the other source which applies a deeper reverse bias to said optical-to-electrical converting means to render ON said switch.
Claim 5
Dependent Claim
19 words
The optoelectronic switch according to claim 3 wherein said one source applying said shallow reverse bias produces zero volts.
Claim 6
Dependent Claim
66 words
The optoelectronic switch according to claim 2 wherein said bias source means comprises a voltage source giving a single bias voltage, and said control means performs first and second control operations, said first control operation connecting said voltage source to said optical-to-electrical converting means to render ON the same, and said second control operation disconnecting said voltage source from said optical-to-electrical to render OFF the same.
Claim 7
Dependent Claim
86 words
The optoelectronic switch according to claim 1 or 2 wherein said optical-to-electrical converting means is constituted by a photodiode comprising a first semiconductor having a p-n junction and made of a semiconductor selected from the group consisting of III-V compound semiconductors or Si, and a second semiconductor made of a semiconductor selected from the group consisting of III-V compound semiconductors or Ge having a lattice constant substantially coinciding with that of said first semiconductor and an energy band gap narrower than that of said first semiconductor.
Claim 8
Dependent Claim
74 words
The optoelectronic switch according to claim 1 or 2 wherein said optical-to-electrical converting means is constituted by a photodiode comprising a first semiconductor having a p-n junction and made of InP, and a second semiconductor made of In x Ga 1-x As 1-y P y , where 0≦x≦1 and 0≦y≦1, having a lattice constant substantially coinciding with that of said first semiconductor and an energy band gap narrower than that of said first semiconductor.
Claim 9
Dependent Claim
75 words
The optoelectronic switch according to claim 1 or 2 wherein said optical-to-electrical converting means is constituted by a photodiode comprising a first semiconductor having a p-n junction and made of GaAs, and a second semiconductor device made of Al x Ga 1-x As 1-y Sb y , where 0≦x≦1 and 0≦y≦1, having a lattice constant substantially coinciding with that of said first semiconductor and an energy band gap narrower than that of said first semiconductor.
Claim 10
Dependent Claim
85 words
The optoelectronic switch according to claim 1 or 2 wherein said optical-to-electrical converting means is constituted by a photodiode comprising a first semiconductor having a p-n junction and made of Al 1-x Ga x As y Sb 1-y where 0≦x≦1 and 0≦y≦1, and a second semiconductor made of Al 1-x' Ga x' As y' P 1-y' , where 0≦x'≦1 and 0≦y'≦1, having a lattice constant substantially coinciding with that of said first semiconductor and an energy band gap narrower than that of said first semiconductor.
Claim 11
Dependent Claim
84 words
The optoelectronic switch according to claim 1 or 2 wherein said optical-to-electrical converting means is constituted by a photodiode comprising a first semiconductor having a p-n junction and made of In 1-x Ga x As y Sb 1-y where 0≦x≦1 and 0≦y≦1, and a second semiconductor made of Al 1-x' Ga x' As y' Sb 1-y' , where 0≦x'≦1, 0≦y'≦1, having a lattice constant substantially coinciding with that of said first semiconductor and an energy band gap narrower than that of said first semiconductor.
Claim 12
Dependent Claim
86 words
The optoelectronic switch according to claim 1 or 2 wherein said optical-to-electrical converting means is constituted by a photodiode comprising a first semiconductor having a p-n junction and made of In 1-x Ga x As y Sb 1-y , where 0≦x≦1 and 0≦y≦1, and a second semiconductor device made of Al 1-x' Ga x' As y' P 1-y' where 0≦x'≦1 and 0≦y'≦1, having a lattice constant substantially coinciding with that of said first semiconductor and an energy band gap narrower than that of said first semiconductor.
Claim 13
Dependent Claim
86 words
The optoelectronic switch according to claim 1 or 2 wherein said optical-to-electrical converting means is constituted by a photodiode comprising a first semiconductor having a p-n junction and made of In 1-x Ga x As y P 1-y where 0≦x≦1 and 0≦y≦1, and a second semiconductor device made of Al 1-x' Ga x' As y' Sb 1-y' , where 0≦x'≦1 and 0≦y'≦1, having a lattice constant substantially coinciding with that of said first semiconductor and an energy band gap narrower than that of said first semiconductor.
Claim 14
Dependent Claim
85 words
The optoelectronic switch according to claim 1 or 2 wherein said optical-to-electrical converting means is constituted by a photodiode comprising a first semiconductor having a p-n junction and made of In 1-x Ga x As y P 1-y where 0≦x≦1 and 0≦y≦1, and a second semiconductor made of Al 1-x' Ga x' As y' P 1-y' , where 0≦x'≦1 and 0≦y'≦1, having a lattice constant substantially coinciding with that of said first semiconductor and an energy band gap narrower than that of said first semiconductor.
Claim 15
Dependent Claim
86 words
The optoelectronic switch according to claim 1 or 2 wherein said optical-to-electrical converting means is constituted by a photodiode comprising a first semiconductor having a p-n junction and made of (Al x Ga 1-x ) y In 1-y Sb where 0≦x≦1 and 0≦y≦1, and a second semiconductor made of (Al x' Ga 1-x' ) y 'In 1-y' Sb, where 0≦x'≦1 and 0≦y'≦1, having a lattice constant substantially coinciding with that of said first semiconductor and an energy band gap narrower than that of said first semiconductor.
Claim 16
Dependent Claim
86 words
The optoelectronic switch according to claim 1 or 2 wherein said optical-to-electrical converting means is constituted by a photodiode comprising a first semiconductor having a p-n junction and made of In 1-x Ga x As y Sb 1-y where 0≦x≦1 and 0≦y≦1, and a second semiconductor device made of (Al x' Ga 1-x' ) y' In 1-y' Sb, where 0≦x'≦1 and 0≦y'≦1, having a lattice constant substantially coinciding with that of said first semiconductor and an energy band gap narrower than that of said first semiconductor.
Claim 17
Dependent Claim
86 words
The optoelectronic switch according to claim 1 or 2 wherein said optical-to-electrical converting means is constituted by a photodiode comprising a first semiconductor having a p-n junction and made of In 1-x Ga x As y P 1-y where 0≦x≦1 and 0≦y≦1, and a second semiconductor device made of In 1-x' Ga x' As y' P 1-y' , where 0≦x'≦1 and 0≦y'≦1, having a lattice constant substantially coinciding with that of said first semiconductor and an energy band gap narrower than that of said first semiconductor.
Claim 18
Dependent Claim
45 words
The optoelectronic switch according to claim 1 or 2 wherein said optical-to-electrical converting means is constituted by a photodiode comprising a first semiconductor having a p-n junction and made of a semiconductor selected from GaAs or AlAs, and a second semiconductor device made of Ge.
Claim 19
Dependent Claim
106 words
The optoelectronic switch according to claim 1 or 2 wherein said optical-to-electrical converting means is constituted by a photodiode comprising a first semiconductor having a p-n junction and made of Si, and a second semiconductor made of a semiconductor selected from the group consisting of In 1-x Ga x As y P 1-y , Al 1-x Ga x As y Sb 1-y , In 1-x Ga x As y Sb 1-y , and (Al x Ga 1-x ) y In 1-y Sb having a lattice constant substantially coinciding with that of said first semiconductor and an energy band gap narrower than that of said first semiconductor.
Claim 20
Dependent Claim
22 words
The optoelectronic switch according to claim 1 or 2 wherein said optical-to-electrical converting means comprises a photodiode having an avalanche multiplication function.
Claim 21
Dependent Claim
30 words
The optoelectronic switch according to claim 1 or 2 wherein a continuously variable bias voltage supply means is used to apply a reverse bias voltage to said optical-to-electrical converting means.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-01-10 | 1986-07-12 | 1987-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-01-10 | 1990-07-12 | 1991-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-01-10 | 1994-07-12 | 1995-01-11 | $7700.00 | Window Closed / Lapsed |