US4368181A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing β-silicon carbide
Assignee: Individual
•
Filing: 1980-12-12
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Granted: 1983-01-11
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Expires: 2000-12-12
Abstract
Abstract A method of producing inexpensive β-silicon carbide at a relatively low temperature and in a high yield, wherein a raw material mixture consisting of carbonaceous powder having a particle size of not larger than 60 μm and silica powder having a particle size of not larger than 150 μm is continuously heated in a reaction system having a high temperature zone and a low temperature zone to form silicon monoxide in the reaction system together with SiC; the silicon monoxide is condensed at the low temperature zone to capture and is recovered in the reaction product; and the recovered product during the reaction or after the reaction is stirred, mixed and pulverized.
Inventors
- 👤 Hiroshige Suzuki
- 👤 Teizo Hase
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 07:59
CPC Classifications
C; C01; C01B; C01B32/00; C01B32/90; C01B32/914; C01B32/956; C01B32/963; C01B32/97; C01P; C01P2006/00; C01P2006/80
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
206 words
A method of producing β-silicon carbide, comprising mixing carbonaceous powder having a particle size of not larger than 60 μm with silica powder having a particle size of not larger than 150 μm in a mixing ratio of the molar ratio of carbon to silica of 3 to produce a raw materiial mixture; heating continuously the raw material mixture in a reaction system having a high temperature zone and a low temperature zone such that the raw material mixture is heated at a low temperature and then at a high temperature in the first half of the reaction and then at a low temperature in the second half of the reaction in this order; condensing silicon monoxide, which is formed together with SiC in the reaction system, in the low temperature zones in the first and second halves in the reaction system to capture and recover the silicon monoxide in the reaction product without escaping of the silicon monoxide from the reaction system; stirring, mixing and pulverizing the recovered product during the reaction or after the reaction to contact again unreacted carbon and silica with the above recovered silicon monoxide and to react them; and repeating the above described operation until the reaction is substantially completed.
Claim 2
Independent Claim
206 words
A method of producing β-silicon carbide, comprising mixing carbonaceous powder having a particle size of not larger than 60 μm with silica powder having a particle size of not larger than 150 μm in a mixing ratio of the molar ratio of carbon to silica of 3 to produce a raw materiial mixture; heating continuously the raw material mixture in a reaction system having a high temperature zone and a low temperature zone such that the raw material mixture is heated at a low temperature and then at a high temperature in the first half of the reaction and then at a low temperature in the second half of the reaction in this order; condensing silicon monoxide, which is formed together with SiC in the reaction system, in the low temperature zones in the first and second halves in the reaction system to capture and recover the silicon monoxide in the reaction product without escaping of the silicon monoxide from the reaction system; stirring, mixing and pulverizing the recovered product during the reaction or after the reaction to contact again unreacted carbon and silica with the above recovered silicon monoxide and to react them; and repeating the above described operation until the reaction is substantially completed.
Claim 3
Dependent Claim
31 words
A method of producing β-silicon carbide according to claim 1, wherein the raw material mixture is continuously heated under vacuum at a temperature of the high temperature zone of 1,200°-1,650° C.
Claim 4
Dependent Claim
34 words
A method of producing β-silicon carbide according to claim 1, wherein the raw material mixture is continuously heated under an inert gas atmosphere at a temperature of the high temperature zone of 1,450°-1,650° C.
Claim 5
Dependent Claim
27 words
A method of producing β-silicon carbide according to claim 1, wherein the raw material mixture is continuously heated while transporting it by means of a screw conveyer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-01-10 | 1986-07-12 | 1987-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-01-10 | 1990-07-12 | 1991-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-01-10 | 1994-07-12 | 1995-01-11 | $7700.00 | Window Closed / Lapsed |