US4367483A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Optical semiconductor device
Assignee: Hitachi Ltd
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Filing: 1980-10-02
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Granted: 1983-01-04
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Expires: 2000-10-02
Abstract
Abstract An optical semiconductor device includes a light emitting element disposed on a silicon sub-mount having a light receiving element formed in a surface region. By virtue of integral arrangement of the light emitting element and the light receiving element, a single lens can be used for both optical transmission and optical reception, whereby an optical communication system can be manufactured very inexpensively. Further, transmission and reception can be carried out simultaneously.
Inventors
- 👤 Takeo Takahashi
- 👤 Kazuhiro Kurata
- 👤 Yuichi Ono
- 👤 Kazuhiro Ito
- 👤 Makoto Morioka
- 👤 Mitsuhiro Mori
- 👤 Ginro Takemura
- 👤 Makoto Sakamoto
- 👤 Masahiro Ichiki
- 👤 Youichi Yasuda
- 👤 Hirobumi Ouchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:31
CPC Classifications
H; H04; H04B; H04B10/00; H04B10/40; G; G02; G02B; G02B6/00; G02B6/24; G02B6/42; G02B6/4201; G02B6/4246; H10; H10F; H10F55/00; H10W; H10W90/00
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
45 words
An optical semiconductor device comprising an optical transmitting element which is disposed on a sub-mount of silicon having a light receiving element formed in a surface region, and means for preventing light produced by said optical transmitting elements from impinging on said light receiving element.
Claim 2
Dependent Claim
45 words
An optical semiconductor device comprising an optical transmitting element which is disposed on a sub-mount of silicon having a light receiving element formed in a surface region, and means for preventing light produced by said optical transmitting elements from impinging on said light receiving element.
Claim 3
Dependent Claim
39 words
An optical semiconductor device according to claim 1, wherein a p-type ohmic contact and an n-type ohmic contact of said optical transmitting element are electrically connected to an n-type region and a p-type region of said silicon sub-mount, respectively.
Claim 4
Dependent Claim
23 words
An optical semiconductor device according to claim 1 or 2, wherein said optical transmitting element is substantially surrounded by said light receiving element.
Claim 5
Dependent Claim
28 words
An optical semiconductor device according to claim 1 or 2, wherein said optical transmitting element is constituted by a light emitting diode of Ga 1-x Al x As-series.
Claim 6
Dependent Claim
26 words
An optical semiconductor device according to claim 3, wherein said optical transmitting element is constituted by a light emitting diode of Ga 1-x Al x As-series.
Claim 7
Dependent Claim
22 words
An optical semiconductor device according to claim 1 or 2, wherein said light receiving element is constituted by a silicon PIN photodiode.
Claim 8
Dependent Claim
20 words
An optical semiconductor device according to claim 3, wherein said light receiving element is constituted by a silicon PIN photodiode.
References Cited (Backward Citations)
US4216485A
Cited
US4275404A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-01-03 | 1986-07-05 | 1987-01-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-01-03 | 1990-07-05 | 1991-01-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-01-03 | 1994-07-05 | 1995-01-04 | $7700.00 | Window Closed / Lapsed |