US4365336A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Terraced substrate semiconductor laser
Assignee: Panasonic Holdings Corp
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Filing: 1980-11-18
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Granted: 1982-12-21
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Expires: 2000-11-18
Abstract
Abstract A terraced-substrate structure semiconductor laser in accordance with the present invention comprises: a terrace-shaped semiconductor substrate having an upper face, a lower face and a step part disposed between said upper face and said lower face, a clad layer formed on said terrace shaped semiconductor substrate and including at least an upper part formed on said upper face and a step part having a triangular section and formed at a corner defined by said lower face and said step part, said step part being thicker than said upper part, an active layer formed on said first clad layer and including a horizontal upper part formed on said upper part of said first clad layer and an oblique lasing region formed oblique on said step part of said first clad layer, but excluding a lower horizontal part, hitherto formed on said lower face, a current injection electrode having a stripe shaped injection face disposed above said lasing region, the improvement is that said active layer is terminated substantially at a lower end of said oblique lasing region by etching away said lower horizontal part of the active layer and said clad layer at the part on said lower face, thereby limiting a path of injected current to enter only in said lasing region.
Inventors
- 👤 Takashi Sugino
- 👤 Hirokazu Shimizu
- 👤 Masaru Wada
- 👤 Kunio Itoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 03:39
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2238
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
155 words
In a semiconductor laser, the improvement comprising: a terrace-shaped semiconductor substrate having an upper face, a lower face and a step part disposed between said upper face and said lower face, a clad layer formed on said terrace-shaped semiconductor substrate and including at least an upper part formed on said upper face and a corner part having a triangular section and formed at a corner defined by said lower face and said step part, said corner part being thicker than said upper part, an active layer formed on said first clad layer and including a horizontal upper part formed on said upper part of said first clad layer and an oblique lasing region formed obliquely on said corner part of said first clad layer, a current injection electrode having a stripe shaped injection face disposed above said lasing region, wherein said active layer is terminated substantially at a lower end of said oblique lasing region.
Claim 2
Dependent Claim
155 words
In a semiconductor laser, the improvement comprising: a terrace-shaped semiconductor substrate having an upper face, a lower face and a step part disposed between said upper face and said lower face, a clad layer formed on said terrace-shaped semiconductor substrate and including at least an upper part formed on said upper face and a corner part having a triangular section and formed at a corner defined by said lower face and said step part, said corner part being thicker than said upper part, an active layer formed on said first clad layer and including a horizontal upper part formed on said upper part of said first clad layer and an oblique lasing region formed obliquely on said corner part of said first clad layer, a current injection electrode having a stripe shaped injection face disposed above said lasing region, wherein said active layer is terminated substantially at a lower end of said oblique lasing region.
Claim 3
Dependent Claim
70 words
A structure in accordance with claim 1, which further comprises an insulation layer selected from a group consisting of an insulating compound or a high resistivity semiconductor, said insulation layer being disposed on a part of said lower face of said semiconductor substrate in a manner to terminate therewith said lower end of said oblique lasing region and also define said stripe shaped injection face of said current injection electrode.
Claim 4
Dependent Claim
19 words
A structure in accordance with claim 1, wherein said semiconductor substrate is GaAs and said active layer is GaAlAs.
Claim 5
Dependent Claim
19 words
A structure in accordance with claim 1, wherein said semiconductor substrate is InP and said active layer is InGaAsP.
Claim 6
Dependent Claim
175 words
In a semiconductor laser the improvement comprising: a terrace-shaped semiconductor substrate having an upper face, a lower face and a step part disposed between said upper face and said lower face, a clad layer formed on said terrace-shaped semiconductor substrate and including at least an upper part formed on said upper face and a corner part having a triangular section and formed at a corner defined by said lower face and said step part, said corner part being thicker than said upper part, an active layer formed on said first clad layer and including a horizontal upper part formed on said upper part of said first clad layer and an oblique lasing region formed obliquely on said corner part of said first clad layer, a current injection electrode having a stripe shaped injection face disposed above said lasing region, wherein said active layer is terminated substantially at a lower end of said oblique lasing region, and epitaxial layers including said active layer are removed at a part on said lower face of said semiconductor substrate.
Claim 7
Dependent Claim
175 words
In a semiconductor laser the improvement comprising: a terrace-shaped semiconductor substrate having an upper face, a lower face and a step part disposed between said upper face and said lower face, a clad layer formed on said terrace-shaped semiconductor substrate and including at least an upper part formed on said upper face and a corner part having a triangular section and formed at a corner defined by said lower face and said step part, said corner part being thicker than said upper part, an active layer formed on said first clad layer and including a horizontal upper part formed on said upper part of said first clad layer and an oblique lasing region formed obliquely on said corner part of said first clad layer, a current injection electrode having a stripe shaped injection face disposed above said lasing region, wherein said active layer is terminated substantially at a lower end of said oblique lasing region, and epitaxial layers including said active layer are removed at a part on said lower face of said semiconductor substrate.
References Cited (Backward Citations)
JPS5596694A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-12-20 | 1986-06-21 | 1986-12-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-12-20 | 1990-06-21 | 1990-12-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-12-20 | 1994-06-21 | 1994-12-21 | $7700.00 | Window Closed / Lapsed |