US4362637A
Expired / Lapsed
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Grain boundary layer dielectric ceramic compositions
Assignee: Panasonic Holdings Corp
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Filing: 1981-04-01
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Granted: 1982-12-07
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Expires: 2001-04-01
Abstract
Abstract Grain boundary layer dielectric ceramic compositions comprising semiconductive ceramic grains having a composition of 50.23 to 49.47 mol % of SrO and CaO, 49.72 to 50.23 mol % of TiO2, 0.05 to 0.3 mol % of Nb2O5, substantially each of said grains being surrounded by grain boundary layer dielectric materials which are formed by grain boundary diffusion of a mixture having a composition of 93.5 to 8.5 mol % of Bi2O3, 4.5 to 45 mol % of Cu2O, 0.5 to 4 mol % of MnO2, 1 to 8.5 mol % of B2O3, 0.5 to 17 mol % of La2O3, and below 17 mol % of TiO2. These ceramic compositions provide capacitors having a temperature coefficient of capacitance less than +/-15%, an apparent dielectric constant higher than 35,000, a dielectric loss less than 0.01 and a breakdown voltage higher than 500 V/mm; or capacitors having a temperature coefficient of capacitance less than +/-10%, an apparent dielectric constant higher than 20,000, a dielectric loss less than 0.01 and a breakdown voltage higher than 700 V/mm; or capacitors having a temperature coefficient of capacitance less than +/-5%, an apparent dielectric constant higher than 5,000, a dielectric loss less than 0.01 and a breakdown voltage higher than 700 V/mm.
Inventors
- 👤 Yoshihiro Matsuo
- 👤 Gen Itakura
- 👤 Shoichi Ikebe
- 👤 Tatsuya Wada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:24
CPC Classifications
C; C04; C04B; C04B35/00; C04B35/01; C04B35/46; C04B35/462; C04B35/465; C04B35/47; H; H01; H01B; H01B3/00; H01B3/02; H01B3/12; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/12; H01G4/1272; H01G4/1281
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
145 words
A grain boundary layer dielectric ceramic composition comprising semiconductive ceramic grains having a composition of 50.23 to 49.47 mol% of SrO, 49.72 to 50.23 mol% of TiO 2 , and 0.05 to 0.3 mol% of Nb 2 O 5 , substantially each of said grains being surrounded by a grain boundary layer of dielectric material formed by grain boundary diffusion of a mixture consisting of 93.5 to 8.5 mol% of Bi 2 O 3 , 4.5 to 45 mol% of Cu 2 O, 0.5 to 4 mol% of MnO 2 , 1 to 8.5 mol% of B 2 O 3 , 0.5 to 17 mol% of La 2 O 3 , and less than 17 mol% of TiO 2 , characterized in having a temperature coefficient of capacitance lower than said composition recited above absent La 2 O 3 in said grain boundary diffusion mixture.
Claim 2
Dependent Claim
145 words
A grain boundary layer dielectric ceramic composition comprising semiconductive ceramic grains having a composition of 50.23 to 49.47 mol% of SrO, 49.72 to 50.23 mol% of TiO 2 , and 0.05 to 0.3 mol% of Nb 2 O 5 , substantially each of said grains being surrounded by a grain boundary layer of dielectric material formed by grain boundary diffusion of a mixture consisting of 93.5 to 8.5 mol% of Bi 2 O 3 , 4.5 to 45 mol% of Cu 2 O, 0.5 to 4 mol% of MnO 2 , 1 to 8.5 mol% of B 2 O 3 , 0.5 to 17 mol% of La 2 O 3 , and less than 17 mol% of TiO 2 , characterized in having a temperature coefficient of capacitance lower than said composition recited above absent La 2 O 3 in said grain boundary diffusion mixture.
Claim 3
Dependent Claim
156 words
A grain boundary layer dielectric ceramic composition comprising semiconductive ceramic grains having a composition of 50.23 to 49.47 mol% of SrO and CaO, wherein the amount of CaO is less than 22.26 mol%, 49.72 to 50.23 mol% of TiO 2 and 0.05 to 0.3 mol% of Nb 2 O 5 , substantially each of said grains being surrounded by a grain boundary layer of dielectric material formed by grain boundary diffusion of a mixture consisting of 93.5 to 8.5 mol% of Bi 2 O 3 , 4.5 to 45 mol% of Cu 2 O, 0.5 to 4 mol% of MnO 2 , 1 to 8.5 mol% of B 2 O 3 , 0.5 to 17 mol% of La 2 O 3 , and less than 17 mol% of TiO 2 , characterized in having a temperature coefficient of capacitance lower than said composition recited above absent La 2 O 3 in said grain boundary diffusion mixture.
Claim 4
Dependent Claim
156 words
A grain boundary layer dielectric ceramic composition comprising semiconductive ceramic grains having a composition of 50.23 to 49.47 mol% of SrO and CaO, wherein the amount of CaO is less than 22.26 mol%, 49.72 to 50.23 mol% of TiO 2 and 0.05 to 0.3 mol% of Nb 2 O 5 , substantially each of said grains being surrounded by a grain boundary layer of dielectric material formed by grain boundary diffusion of a mixture consisting of 93.5 to 8.5 mol% of Bi 2 O 3 , 4.5 to 45 mol% of Cu 2 O, 0.5 to 4 mol% of MnO 2 , 1 to 8.5 mol% of B 2 O 3 , 0.5 to 17 mol% of La 2 O 3 , and less than 17 mol% of TiO 2 , characterized in having a temperature coefficient of capacitance lower than said composition recited above absent La 2 O 3 in said grain boundary diffusion mixture.
Claim 5
Dependent Claim
187 words
A grain boundary layer dielectric ceramic composition comprising semiconductive ceramic grains having a composition of 100 mol parts of a mixture of 50.23 to 49.47 mol% of SrO and CaO, wherein the amount of CaO is less than 22.26 mol%, 49.72 to 50.23 mol% of TiO 2 , and 0.05 to 0.3 mol% of Nb 2 O 5 , and containing SiO 2 in an amount less than 2 mol parts of SiO 2 to 100 mol parts of said mixture, substantially each of said grains being surrounded by a grain boundary layer of dielectric material formed by a grain boundary diffusion of a mixture consisting of 93.5 to 8.5 mol% of Bi 2 O 3 , 4.5 to 45 mol% of Cu 2 O, 0.5 to 4 mol% of MnO 2 , 1 to 8.5 mol% of B 2 O 3 , 0.5 to 17 mol% of La 2 O 3 , and less than 17 mol% of TiO 2 , characterized in having a temperature coefficient of capacitance lower than said composition recited above absent La 2 O 3 in said grain boundary diffusion mixture.
Claim 6
Dependent Claim
187 words
A grain boundary layer dielectric ceramic composition comprising semiconductive ceramic grains having a composition of 100 mol parts of a mixture of 50.23 to 49.47 mol% of SrO and CaO, wherein the amount of CaO is less than 22.26 mol%, 49.72 to 50.23 mol% of TiO 2 , and 0.05 to 0.3 mol% of Nb 2 O 5 , and containing SiO 2 in an amount less than 2 mol parts of SiO 2 to 100 mol parts of said mixture, substantially each of said grains being surrounded by a grain boundary layer of dielectric material formed by a grain boundary diffusion of a mixture consisting of 93.5 to 8.5 mol% of Bi 2 O 3 , 4.5 to 45 mol% of Cu 2 O, 0.5 to 4 mol% of MnO 2 , 1 to 8.5 mol% of B 2 O 3 , 0.5 to 17 mol% of La 2 O 3 , and less than 17 mol% of TiO 2 , characterized in having a temperature coefficient of capacitance lower than said composition recited above absent La 2 O 3 in said grain boundary diffusion mixture.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-12-06 | 1986-06-07 | 1986-12-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-12-06 | 1990-06-07 | 1990-12-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-12-06 | 1994-06-07 | 1994-12-07 | $7700.00 | Window Closed / Lapsed |