← Back to Patent Explorer
US4361638A Expired / Lapsed US ⏱️ 0.0 years remaining

Electrophotographic element with alpha -Si and C material doped with H and F and process for producing the same

Assignee: Fujifilm Holdings Corp
•
Filing: 1980-10-30
•
Granted: 1982-11-30
•
Expires: 2000-10-30
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract An electrophotographic light-sensitive element and process for the production thereof are described, wherein the element comprises an electrically conductive support coated with a photoconductive layer composed of a silicon- and carbon-based amorphous material doped with hydrogen and fluorine.

Inventors

  • 👤 Akio Higashi
  • 👤 Kazuhiro Kawashiri
  • 👤 Yuzo Mizobuchi

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 04:53
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08221; G03G5/08235

Claims Analysis

Total Claims: 19
Claim 1
Independent Claim 76 words
An electrophotographic light-sensitive element comprising an electrically conductive support coated with a photoconductive layer composed of a silicon- and carbon-based amorphous material doped with hydrogen and fluorine, wherein the amorphous material has a carbon to silicon atomic ratio in the range of from about 0.1:1 to about 0.3:1 and wherein the amount of fluorine doped in said amorphous material is from 0.01 to 20 atomic %, based on the total amount of atomic silicon and carbon.
Claim 2
Dependent Claim 76 words
An electrophotographic light-sensitive element comprising an electrically conductive support coated with a photoconductive layer composed of a silicon- and carbon-based amorphous material doped with hydrogen and fluorine, wherein the amorphous material has a carbon to silicon atomic ratio in the range of from about 0.1:1 to about 0.3:1 and wherein the amount of fluorine doped in said amorphous material is from 0.01 to 20 atomic %, based on the total amount of atomic silicon and carbon.
Claim 3
Dependent Claim 76 words
An electrophotographic light-sensitive elements according to claim 1 wherein the photoconductive layer comprises a first layer of said silicon- and carbon-based amorphous material doped with hydrogen and fluorine and further doped with an impurity to provide either p-type or n-type conduction on the support and a second layer of said silicon- and carbon-based amorphous material doped with hydrogen and fluorine and having a dark specific resistance of at least 10 10 ohm.cm on said first layer.
Claim 4
Dependent Claim 50 words
An electrophotographic light-sensitive element according to claim 2 wherein the second layer is overlaid with a doped third layer of said silicon- and carbon-based amorphous material doped with hydrogen and fluorine which is further doped with an impurity to provide a conduction type opposite to that of the first layer.
Claim 5
Dependent Claim 40 words
An electrophotographic light-sensitive element according to claim 1, 2 or 3, wherein a charge transport layer is provided between the support and the photoconductive layer, and/or on the surface of the photoconductive layer on the side thereof opposite the support.
Claim 6
Dependent Claim 28 words
An electrophotographic light-sensitive element according to claim 4 wherein an anti-reflection layer is further provided on the surface of the element on the side thereof opposite the support.
Claim 7
Dependent Claim 35 words
An electrophotographic light-sensitive element according to claim 1, 2, or 3 wherein the amount of hydrogen doped therein is from 1 to 40 atomic percent, based on the total amount of atomic silicon and carbon.
Claim 8
Dependent Claim 35 words
An electrophotographic light-sensitive element according to claim 1, 2, or 3 wherein the amount of hydrogen doped therein is from 10 to 30 atomic percent, based on the total amount of atomic silicon and carbon.
Claim 9
Dependent Claim 35 words
An electrophotographic light-sensitive element according to claim 1, 2, or 3 wherein the amount of fluorine doped therein is from 0.5 to 10 atomic percent, based on the total amount of atomic silicon and carbon.
Claim 10
Dependent Claim 32 words
An electrophotographic light-sensitive element according to claim 7 wherein fluorine is incorporated therein in an amount from 0.5 to 10 atomic percent, based on the total amount of atomic silicon and carbon.
Claim 11
Dependent Claim 26 words
An electrophotographic light-sensitive element according to claim 2 or 3 therein said impurity is an element of Group IIIA or Group VA of the Periodic Table.
Claim 12
Dependent Claim 17 words
An electrophotographic light-sensitive element according to claim 10 wherein the impurity is an element of Group IIIA.
Claim 13
Dependent Claim 17 words
An electrophotographic light-sensitive element according to claim 10 wherein the impurity is an element of Group VA.
Claim 14
Dependent Claim 25 words
An electrophotographic light-sensitive element according to claim 2 or 3 wherein the impurity is selected from the group consisting of B, As, P and Sb.
Claim 15
Dependent Claim 35 words
An electrophotographic light-sensitive element according to claim 11 wherein the amount of the element of Group IIIA is from 10 -3 to 5 atomic percent, based on the total amount of atomic silicon and carbon.
Claim 16
Dependent Claim 35 words
An electrophotographic light-sensitive element according to claim 11 wherein the amount of the element of Group IIIA is from 10 -2 to 1 atomic percent based on the total amount of atomic silicon and carbon.
Claim 17
Dependent Claim 35 words
An electrophotographic light-sensitive element according to claim 12 wherein the amount of the element of Group VA is from 10 -5 to 1 atomic percent based on the total amount of atomic silicon and carbon.
Claim 18
Dependent Claim 36 words
An electrophotographic light-sensitive element according to claim 12 wherein the amount of the element of Group VA is from 10 -4 to 10 -1 atomic percent based on the total amount of atomic silicon and carbon.
Claim 19
Dependent Claim 23 words
An electrophotographic light-sensitive element according to claim 1, wherein said layer has a dark specific resistance of at least 10 10 ohm. cm.

References Cited (Backward Citations)

US3953207A Cited
US4225222A Cited
US4217374A Cited
US4289822A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1985-11-29 1986-05-31 1986-11-30 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1989-11-29 1990-05-31 1990-11-30 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1993-11-29 1994-05-31 1994-11-30 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag