US4360142A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a solder interconnection capable of sustained high power levels between a semiconductor device and a supporting substrate
Assignee: International Business Machines Corp
•
Filing: 1981-05-08
•
Granted: 1982-11-23
•
Expires: 2001-05-08
Abstract
Abstract A process for forming ball limiting metallurgy pad structure for a semiconductor device solder bond interconnection comprising: forming a conductive layer that is adherent to the semiconductor device passivating layer, forming a relatively thick layer of a material having a high thermal conductivity, forming a barrier layer that protects the high conductivity layer by physically preventing any interaction or alloying with the subsequent layers, and forming a layer of a material that is solder wettable.
Inventors
- 👤 Charles Carpenter
- 👤 Joseph F. Fugardi
- 👤 Lawrence V. Gregor
- 👤 Peter S. Grosewald
- 👤 Morton D. Reeber
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 23:20
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; B; B23; B23K; B23K35/00; B23K35/001; H10W20/44; H10W20/4403; H10W72/00; H10W72/01; H10W72/012; H10W72/019; B23K2035/008; H10W72/20; H10W72/251; H10W72/252; H10W72/90; H10W72/921; H10W72/923; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
151 words
A process for forming an improved solder interconnection on a semiconductor device and supporting substrate that is resistant to thermal migration of metal atoms in the interconnection, comprising forming a solder wettable pad structure on the device that is in electrical contact with a device element by (a) depositing a layer of chromium on the surface of the device, (b) depositing a first layer of phased copper-chromium over said layer of chromium, (c) depositing a first layer of copper over said layer of phased copper-chromium, (d) depositing a second phased chromium-copper layer over the said first copper layer, and (e) depositing a second layer of copper over said second phased chromium-copper layer, depositing a thick layer of solder over the resultant pad structure, placing the device on a supporting substrate provided with a corresponding solder wettable pad, heating to join said pad on the device to the pad on the substrate.
Claim 2
Dependent Claim
151 words
A process for forming an improved solder interconnection on a semiconductor device and supporting substrate that is resistant to thermal migration of metal atoms in the interconnection, comprising forming a solder wettable pad structure on the device that is in electrical contact with a device element by (a) depositing a layer of chromium on the surface of the device, (b) depositing a first layer of phased copper-chromium over said layer of chromium, (c) depositing a first layer of copper over said layer of phased copper-chromium, (d) depositing a second phased chromium-copper layer over the said first copper layer, and (e) depositing a second layer of copper over said second phased chromium-copper layer, depositing a thick layer of solder over the resultant pad structure, placing the device on a supporting substrate provided with a corresponding solder wettable pad, heating to join said pad on the device to the pad on the substrate.
Claim 3
Dependent Claim
18 words
The process of claim 1 wherein the solder in said solder layer includes a significant amount of indium.
Claim 4
Dependent Claim
19 words
The process of claim 2 wherein the solder in said solder layer is a mixture of indium and lead.
Claim 5
Dependent Claim
19 words
The process of claim 3 wherein the solder in said solder layer contains approximately 50% indium and 50% lead.
Claim 6
Dependent Claim
24 words
The process of claim 1 wherein said first copper layer of said pad has a thickness in the range of 5000 to 10,000 A.
Claim 7
Dependent Claim
21 words
The process of claim 1 wherein said layer of solder has a thickness in the range of 2 to 6 mils.
References Cited (Backward Citations)
US3495133A
Cited
US3706015A
Cited
US3741242A
Cited
US3839727A
Cited
US3881884A
Cited
US3993123A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-11-22 | 1986-05-24 | 1986-11-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-11-22 | 1990-05-24 | 1990-11-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-11-22 | 1994-05-24 | 1994-11-23 | $7700.00 | Window Closed / Lapsed |