US4359367A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon-based semiconductor devices
Assignee: University of Toronto
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Filing: 1980-06-25
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Granted: 1982-11-16
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Expires: 2000-06-25
Abstract
Abstract A new silicon based semiconductor device comprises a layer of amorphous silicon in which the density of energy states in the energy gap has been reduced by hydrogenation; this layer is deposited on a layer of a hydrogen-containing substrate material that can supply hydrogen in atomic form to the amorphous silicon. In processes of the invention the silicon layer and a substrate layer are hydrogenated separately to permit optimum hydrogenation; the silicon layer may be deposited without hydrogenation and hydrogenated subsequently with hydrogen from the substrate material. A specific example consists of a layer of hydrogenated amorphous silicon of about 1 micrometer thickness deposited on a hydrogen-containing chromium layer which is itself deposited on a carrier, the silicon then forming the active element of a photovoltaic cell particularly functional as a solar cell.
Inventors
- 👤 Stefan Zukotynski
- 👤 Ki B. Ma
- 👤 John Perz
- 👤 Andrzej Szadkowski
- 👤 Ben-Gur Yacobi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 11:56
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/40; H10D62/402; H10F; H10F71/00; H10F71/10; H10F71/103; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/1662; H10P; H10P95/00; H10P95/94; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
54 words
A method of making an amorphous-silicon-based semi-conductor device including the steps of: (a) preparing a thicker hydrogen-containing substrate layer of a material, (b) depositing a thinner layer of amorphous silicon on the hydrogen-containing layer so that the silicon layer can receive hydrogen released therefrom, and (c) hydrogenating the said thinner layer of amorphous silicon.
Claim 2
Independent Claim
54 words
A method of making an amorphous-silicon-based semi-conductor device including the steps of: (a) preparing a thicker hydrogen-containing substrate layer of a material, (b) depositing a thinner layer of amorphous silicon on the hydrogen-containing layer so that the silicon layer can receive hydrogen released therefrom, and (c) hydrogenating the said thinner layer of amorphous silicon.
Claim 3
Dependent Claim
20 words
A method as claimed in claim 1, wherein the silicon layer is hydrogenated with hydrogen obtained from the substrate layer.
Claim 4
Dependent Claim
32 words
A method as claimed in claim 2, wherein hydrogen is released from the hydrogen-containing substrate layer for hydrogenation of the silicon by heating to a temperature between about 200° and 450° C.
Claim 5
Dependent Claim
30 words
A method as claimed in claim 1, wherein the hydrogen-containing substrate layer material is a metal and is hydrogenated by electroplating it onto a further layer of a carrier material.
Claim 6
Dependent Claim
20 words
A method as claimed in claim 1, wherein the silicon is hydrogenated by electrolysis with the silicon as an electrode.
Claim 7
Dependent Claim
41 words
A method as claimed in claim 1, wherein the hydrogen-containing substrate layer material is a metal selected from the group of transition metals having incomplete electronic d-shells, and alloys thereof including a major proportion of at least one of said metals.
Claim 8
Dependent Claim
32 words
A method as claimed in claim 6, wherein the hydrogen-containing substrate layer material is a metal selected from the group titanium, vanadium, chromium, manganese, iron, cobalt and nickel, and said alloys thereof.
Claim 9
Dependent Claim
26 words
A method as claimed in claim 6, wherein the hydrogen-containing substrate layer material is a metal selected from the group chromium, iron and said alloys thereof.
Claim 10
Dependent Claim
47 words
A method as claimed in claim 1, wherein the initial hydrogen content of the hydrogen-containing substrate layer material is higher than the initial hydrogen content of the silicon and the initial hydrogen content of the silicon is in the range about 1 to about 20 atomic percent.
Claim 11
Dependent Claim
29 words
A method as claimed in claim 9, wherein the initial hydrogen content of the hydrogen-containing substrate material is in the range of about 1 to about 50 atomic percent.
Claim 12
Dependent Claim
47 words
A method as claimed in claim 1, and including the step of providing on the surfaces of the hydrogen-containing substrate material not covered by silicon a barrier material relatively impervious to hydrogen to inhibit escape of hydrogen from the hydrogen-containing substrate material except into the silicon layer.
Claim 13
Dependent Claim
20 words
A method as claimed in claim 1, and including the further step of reloading the hydrogen-containing substrate material with hydrogen.
References Cited (Backward Citations)
US4265720A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-11-15 | 1986-05-17 | 1986-11-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-11-15 | 1990-05-17 | 1990-11-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-11-15 | 1994-05-17 | 1994-11-16 | $7700.00 | Window Closed / Lapsed |