US4357553A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Surface-acoustic-wave device
Assignee: Faurecia Clarion Electronics Co Ltd
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Filing: 1980-08-14
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Granted: 1982-11-02
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Expires: 2000-08-14
Abstract
Abstract A surface-acoustic-wave device has a laminate formed of a semiconductor and a piezoelectric layer and a depletion layer control means locally provided at an interface portion of the semiconductor and said piezoelectric layer, wherein a parametric interaction is caused at a region other than an area where the depletion layer control means is provided and a depletion layer capacitance is controlled by applying a DC bias voltage and a pumping voltage to the depletion layer control means.
Inventors
- 👤 Shoichi Minagawa
- 👤 Takamasa Sakai
- 👤 Takeshi Okamoto
- 👤 Morihiro Niimi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:48
CPC Classifications
H; H03; H03F; H03F13/00
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
108 words
A surface-acoustic-wave device which comprises: a laminate of a semiconducting material and a piezoelectric material; means for propagating a surface-acoustic-wave through said piezoelectric material; depletion layer control means locally provided at an interface of said semiconducting material and said piezoelectric material; and means for applying a DC bias voltage and an AC pumping voltage between said depletion layer control means and a location on said semiconducting material spaced from said depletion layer control means, to cause a parametric interaction, between said surface-acoustic-wave propagated through said piezoelectric material and said pumping voltage, at a region or regions other than a region where said depletion layer control means is provided.
Claim 2
Dependent Claim
108 words
A surface-acoustic-wave device which comprises: a laminate of a semiconducting material and a piezoelectric material; means for propagating a surface-acoustic-wave through said piezoelectric material; depletion layer control means locally provided at an interface of said semiconducting material and said piezoelectric material; and means for applying a DC bias voltage and an AC pumping voltage between said depletion layer control means and a location on said semiconducting material spaced from said depletion layer control means, to cause a parametric interaction, between said surface-acoustic-wave propagated through said piezoelectric material and said pumping voltage, at a region or regions other than a region where said depletion layer control means is provided.
Claim 3
Dependent Claim
133 words
A surface-acoustic-wave device which comprises: a laminate of a semiconducting material and a piezoelectric material; means for propagating a surface-acoustic-wave through said piezoelectric material; depletion layer control means provided locally at an interface of said semiconducting material and said piezoelectric material; a pumping electrode provided on a surface of said piezoelectric material; means for applying a DC bias voltage between said depletion layer control means and a location on said semiconductor material spaced from said depletion layer control means; and means for applying an AC pumping voltage between said pumping electrode and a location on said semiconductor material; whereby to cause a parametric interaction, between said surface-acoustic-wave propagated through said piezoelectric material and said pumping voltage, at a region or regions other than a region where said depletion layer control means is provided.
Claim 4
Dependent Claim
133 words
A surface-acoustic-wave device which comprises: a laminate of a semiconducting material and a piezoelectric material; means for propagating a surface-acoustic-wave through said piezoelectric material; depletion layer control means provided locally at an interface of said semiconducting material and said piezoelectric material; a pumping electrode provided on a surface of said piezoelectric material; means for applying a DC bias voltage between said depletion layer control means and a location on said semiconductor material spaced from said depletion layer control means; and means for applying an AC pumping voltage between said pumping electrode and a location on said semiconductor material; whereby to cause a parametric interaction, between said surface-acoustic-wave propagated through said piezoelectric material and said pumping voltage, at a region or regions other than a region where said depletion layer control means is provided.
Claim 5
Dependent Claim
122 words
A surface-acoustic-wave device which comprises: a laminate of a semiconducting material and a piezoelectric material; means for propagating a surface-acoustic-wave through said piezoelectric material; depletion layer control means provided locally at an interface of said semiconducting material and said piezoelectric material; an insulating layer provided at said interface for surface passivation of said semiconducting material; and means for applying a DC bias voltage and an AC pumping voltage between said depletion layer control means and a location on said semiconducting material spaced from said depletion layer control means, to cause a parametric interaction, between said surface-acoustic-wave propagated through said piezoelectric material and said pumping voltage, at a region or regions other than a region where said depletion layer control means is provided.
Claim 6
Dependent Claim
122 words
A surface-acoustic-wave device which comprises: a laminate of a semiconducting material and a piezoelectric material; means for propagating a surface-acoustic-wave through said piezoelectric material; depletion layer control means provided locally at an interface of said semiconducting material and said piezoelectric material; an insulating layer provided at said interface for surface passivation of said semiconducting material; and means for applying a DC bias voltage and an AC pumping voltage between said depletion layer control means and a location on said semiconducting material spaced from said depletion layer control means, to cause a parametric interaction, between said surface-acoustic-wave propagated through said piezoelectric material and said pumping voltage, at a region or regions other than a region where said depletion layer control means is provided.
Claim 7
Dependent Claim
28 words
A surface-acoustic-wave device as claimed in claim 2, wherein said pumping electrode is aligned with and has an area greater in size than said depletion layer control means.
Claim 8
Dependent Claim
84 words
A surface-acoustic-wave device as claimed in claim 1 or 3, wherein said means for applying a DC bias voltage and a pumping voltage includes a pumping power source, a variable DC power source, a DC current blocking capacitor and an AC current blocking choke coil; said pumping power source being connected to said depletion layer control means through said DC current blocking capacitor; and said variable DC power source being connected to said depletion layer control means through said AC current blocking choke coil.
Claim 9
Dependent Claim
33 words
A surface-acoustic-wave device as claimed in claim 2, which further comprises an insulating layer provided between said semiconducting material and said piezoelectric material at said interface for surface passivation of said semiconducting material.
Claim 10
Dependent Claim
49 words
A surface-acoustic wave device as claimed in claim 2, wherein said means for applying a DC bias voltage includes a variable DC power source connected to said depletion layer control means, and said means for applying a pumping voltage includes a pumping power source connected to said pumping electrode.
Claim 11
Dependent Claim
28 words
A surface-acoustic-wave device as claimed in claims 1, 2, 3, 4, 6 or 7, wherein said depletion layer control means includes a p-n junction formed at said interface.
Claim 12
Dependent Claim
35 words
A surface-acoustic-wave device as claimed in claims 1, 2, 3, 4, 6 or 7, wherein said depletion layer control means includes p-n junctions at said interface and voltage applying electrodes provided at said p-n junctions.
Claim 13
Dependent Claim
41 words
A surface-acoustic-wave device as claimed in claims 1, 2, 3, 4, 6 or 7, wherein said depletion layer control means includes U-shaped p-n junctions at said interface and voltage applying electrodes deposited on the respective concave portions of said p-n junctions.
Claim 14
Dependent Claim
26 words
A surface-acoustic-wave device as claimed in claims 1, 2, 3, 6 or 7, wherein said depletion layer control means includes a Schottky junction at said interface.
Claim 15
Dependent Claim
26 words
A surface-acoustic-wave device as claimed in claim 3, wherein said depletion layer control means includes a metal-insulator semiconductor provided on said insulating layer at said interface.
Claim 16
Dependent Claim
38 words
A surface-acoustic-wave device as claimed in claims 1, 2, 3 or 6, wherein said depletion layer control means includes a plurality of spaced and electrically connected depletion layer control members arranged along a propagation direction of said surface-acoustic-wave.
Claim 17
Dependent Claim
33 words
A surface-acoustic-wave device as claimed in claim 13, wherein each of said depletion layer control members has a width in said propagation direction which is smaller than the distance between adjacent said members.
Claim 18
Dependent Claim
32 words
A surface-acoustic-wave device as claimed in claim 13, wherein each of said depletion layer control members has a width in said propagation direction which is less than the wavelength of said surface-acoustic-wave.
Claim 19
Dependent Claim
26 words
A surface-acoustic-wave device as claimed in claim 13, wherein the distance between adjacent said depletion layer control members is less than the wavelength of said surface-acoustic-wave.
Claim 20
Dependent Claim
24 words
A surface-acoustic-wave device as claimed in any one of claims 1, 2 or 3 in which said AC pumping voltage is of high frequency.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-11-01 | 1986-05-03 | 1986-11-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-11-01 | 1990-05-03 | 1990-11-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-11-01 | 1994-05-03 | 1994-11-02 | $7700.00 | Window Closed / Lapsed |