US4355375A
Expired / Lapsed
US
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Semiconductor memory device
Assignee: Fujitsu Ltd
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Filing: 1981-07-27
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Granted: 1982-10-19
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Expires: 2001-07-27
Abstract
Abstract A semiconductor memory device includes a plurality of floating gate transistors each of which comprises a semiconductor substrate, a first and second impurity doped region, channel region formed between the first and second impurity doped regions, a floating gate electrode formed on the channel region and separated into a plurality of portions at an intermediate portion of the channel region, and, a control gate formed on the floating gate and on the intermediate portion of the channel region. Part of the control gate is formed between the separated floating gate electrode portions and faces the channel region.
Inventors
- 👤 Hideki Arakawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 02:40
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/684; H10D30/686; G; G11; G11C; G11C16/00; G11C16/02; G11C16/04; G11C16/0408; G11C16/0425
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
178 words
A semiconductor memory device having a plurality of memory cell transistors each of which comprises: a semiconductor substrate of a first conductivity type; first and second impurity doped regions of a second conductivity type formed in said semiconductor substrate to define a channel region which extends between said first and second impurity doped regions; an insulation film formed on said channel region; a floating gate electrode formed on said insulation film, said floating gate electrode having first and second portions facing the portions of said channel region adjacent to said first and second impurity doped regions, respectively, said first and second portions of said floating gate electrode being separated from each other over an intermediate portion of said channel region, said first and second portions being connected at a position outside the channel region; a control gate electrode formed over said first and second portions of said floating gate electrode and on said insulation film over said intermediate portion of said channel region, a part of said control gate electrode facing said intermediate portion of said channel region.
Claim 2
Dependent Claim
178 words
A semiconductor memory device having a plurality of memory cell transistors each of which comprises: a semiconductor substrate of a first conductivity type; first and second impurity doped regions of a second conductivity type formed in said semiconductor substrate to define a channel region which extends between said first and second impurity doped regions; an insulation film formed on said channel region; a floating gate electrode formed on said insulation film, said floating gate electrode having first and second portions facing the portions of said channel region adjacent to said first and second impurity doped regions, respectively, said first and second portions of said floating gate electrode being separated from each other over an intermediate portion of said channel region, said first and second portions being connected at a position outside the channel region; a control gate electrode formed over said first and second portions of said floating gate electrode and on said insulation film over said intermediate portion of said channel region, a part of said control gate electrode facing said intermediate portion of said channel region.
Claim 3
Dependent Claim
54 words
A semiconductor memory device as claimed in claim 1, wherein said floating gate electrode is separated into two parallel portions over said channel region, wherein said two parallel portions are coupled to each other at the ends thereof outside of said channel region, and wherein said floating gate electrode has a substantially U-shaped area.
Claim 4
Dependent Claim
53 words
A semiconductor memory device as claimed in claim 1, wherein said floating gate electrode is separated into two parallel portions over said channel region, wherein said two parallel portions are joined to each other at both ends outside of said channel region, and wherein said floating gate electrode has a substantially O-shaped area.
Claim 5
Dependent Claim
77 words
A semiconductor memory device as claimed in claim 1, 2 or 3, wherein said memory cell transistors are arranged in a memory matrix comprising a plurality of bit lines and a plurality of word lines, said control gate electrode of each of said memory cell transistors being connected to one of said plurality of word lines and the drain region of each of the memory cell transistors being connected to one of said plurality of bit lines.
Claim 6
Dependent Claim
176 words
A semiconductor memory device having a plurality of memory cell transistors, each of said plurality of memory cell transistors comprising: a semiconductor substrate of a first conductivity type; a first insulation film formed on said semiconductor substrate; a floating gate electrode having first and second portions formed on said first insulating film; a second insulating film formed on said first and second portions of said floating gate electrode; a control gate electrode formed on said second insulating film overlying said first and second portions of said floating gate electrode and formed over the region of said first insulating film between said first and second portions of said floating gate electrode; and first and second impurity doped regions having a second conductivity type and formed in said semiconductor substrate adjacent said first and second portions of said floating gate electrode to define a channel region which extends between said first and second impurity doped regions, the part of said control gate electrode between the first and second portions of said floating gate electrode facing said channel region.
Claim 7
Dependent Claim
176 words
A semiconductor memory device having a plurality of memory cell transistors, each of said plurality of memory cell transistors comprising: a semiconductor substrate of a first conductivity type; a first insulation film formed on said semiconductor substrate; a floating gate electrode having first and second portions formed on said first insulating film; a second insulating film formed on said first and second portions of said floating gate electrode; a control gate electrode formed on said second insulating film overlying said first and second portions of said floating gate electrode and formed over the region of said first insulating film between said first and second portions of said floating gate electrode; and first and second impurity doped regions having a second conductivity type and formed in said semiconductor substrate adjacent said first and second portions of said floating gate electrode to define a channel region which extends between said first and second impurity doped regions, the part of said control gate electrode between the first and second portions of said floating gate electrode facing said channel region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-10-18 | 1986-04-19 | 1986-10-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-10-18 | 1990-04-19 | 1990-10-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-10-18 | 1994-04-19 | 1994-10-19 | $7700.00 | Window Closed / Lapsed |