US4354130A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Surface acoustic wave device using a multi-layer substrate including α2 O3, SiO and ZnO
Assignee: Panasonic Holdings Corp
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Filing: 1980-12-05
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Granted: 1982-10-12
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Expires: 2000-12-05
Abstract
Abstract This invention provides a surface acoustic wave device which comprises a multi-layered substrate. The multi-layered substrate comprises at least a piezoelectric zinc oxide layer, an intermediate silicon oxide layer and an α-Al 2 O 3 base made of a single crystal havine an (0112) crystallographic plane or an equivalent crystallographic plane. This surface acoustic wave device is operable at ultra-high frequency.
Inventors
- 👤 Shusuke Ono
- 👤 Tsuneo Mitsuyu
- 👤 Osamu Yamazaki
- 👤 Kiyotaka Wasa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 04:19
CPC Classifications
H; H03; H03H; H03H9/00; H03H9/02; H03H9/02535; H03H9/02818; H03H9/02834; G; G10; G10K; G10K11/00; G10K11/36; H03H9/02543; H03H9/02574
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
106 words
A surface acoustic wave device comprising a multi-layered substrate, in which said multi-layered substrate comprises at least, in the following order, an α-Al 2 O 3 single crystal base made of a single crystal having an (0112) crystallographic plane or a crystallographically equivalent plane, an intermediate silicon oxide layer, a metal film, a piezoelectric zinc oxide layer and an interdigital electrode, the thickness of said metal film being very much smaller than λ and said zinc oxide layer having a layer thickness which ranges from 0.8/k to 3.7/k, where k is a wave constant equal to 2π/λ, λ being the wavelength of said surface acoustic wave.
Claim 2
Dependent Claim
106 words
A surface acoustic wave device comprising a multi-layered substrate, in which said multi-layered substrate comprises at least, in the following order, an α-Al 2 O 3 single crystal base made of a single crystal having an (0112) crystallographic plane or a crystallographically equivalent plane, an intermediate silicon oxide layer, a metal film, a piezoelectric zinc oxide layer and an interdigital electrode, the thickness of said metal film being very much smaller than λ and said zinc oxide layer having a layer thickness which ranges from 0.8/k to 3.7/k, where k is a wave constant equal to 2π/λ, λ being the wavelength of said surface acoustic wave.
Claim 3
Dependent Claim
25 words
A surface acoustic wave device as claimed in claim 1, in which the layer thickness of said zinc oxide layer ranges from 0.84/k to 2.45/k.
Claim 4
Dependent Claim
25 words
A surface acoustic wave device as claimed in claim 1, in which the layer thickness of said zine oxide layer ranges from 0.98/k to 1.75/k.
Claim 5
Dependent Claim
25 words
A surface acoustic wave device as claimed in claim 1, in which the layer thickness of said silicon oxide layer ranges from 2/k to 9/k.
Claim 6
Dependent Claim
25 words
A surface acoustic wave device as claimed in claim 1, in which the layer thickness of said silicon oxide layer ranges from 3.2/k to 6.3/k.
Claim 7
Dependent Claim
25 words
A surface acoustic wave device as claimed in claim 1, in which the layer thickness of said silicon oxide layer ranges from 3.9/k to 5.3/k.
Claim 8
Dependent Claim
41 words
A surface acoustic wave device as claimed in claim 1 in which a propagation direction of said surface acoustic wave is parallel to a <0111> crystalographic axis of said α-Al 2 O 3 base or one of the crystalographically equivalent axes.
Claim 9
Dependent Claim
44 words
A surface acoustic wave device as claimed in claim 7, in which said zinc oxide layer has polycrystalline form and an angle between the <0001> axis of said polycrystalline and the normal direction of said α-Al 2 O 3 base is less than 10°.
Claim 10
Dependent Claim
101 words
A surface acoustic wave device comprising a multi-layered substrate, in which said multi-layered substrate comprises at least, in the following order, an α-Al 2 O 3 single crystal base having an (0112) crystallographic plane or a crystallographically equivalent plane, an intermediate silicon oxide layer, an interdigital electrode, a piezoelectric zinc oxide layer and a metal film, the thickness of said metal film being very much smaller than λ and said zinc oxide layer having a layer thickness which ranges from 0.8/k to 1.85/k, where k is a wave constant equal to 2π/λ, λ being the wavelength of said surface acoustic wave.
Claim 11
Dependent Claim
101 words
A surface acoustic wave device comprising a multi-layered substrate, in which said multi-layered substrate comprises at least, in the following order, an α-Al 2 O 3 single crystal base having an (0112) crystallographic plane or a crystallographically equivalent plane, an intermediate silicon oxide layer, an interdigital electrode, a piezoelectric zinc oxide layer and a metal film, the thickness of said metal film being very much smaller than λ and said zinc oxide layer having a layer thickness which ranges from 0.8/k to 1.85/k, where k is a wave constant equal to 2π/λ, λ being the wavelength of said surface acoustic wave.
Claim 12
Dependent Claim
25 words
A surface acoustic wave device as claimed in claim 9, in which the layer thickness of said zinc oxide layer ranges from 0.84/k to 1.58/k.
Claim 13
Dependent Claim
25 words
A surface acoustic wave device as claimed in claim 9, in which the layer thickness of said zinc oxide layer ranges from 0.95/k to 1.30/k.
Claim 14
Dependent Claim
25 words
A surface acoustic wave device as claimed in claim 9, in which the layer thickness of said silicon oxide layer ranges from 2/k to 9/k.
Claim 15
Dependent Claim
25 words
A surface acoustic wave device as claimed in claim 9, in which the layer thickness of said silicon oxide layer ranges from 3.2/k to 6.3/k.
Claim 16
Dependent Claim
25 words
A surface acoustic wave device as claimed in claim 9, in which the layer thickness of said silicon oxide layer ranges from 3.9/k to 5.3/k.
Claim 17
Dependent Claim
41 words
A surface acoustic wave device as claimed in claim 9, in which a propagation direction of said surface acoustic wave is parallel to a (0111) crystalographic axis of said α-Al 2 O 3 base or one of the crystallographically equivalent axes.
Claim 18
Dependent Claim
44 words
The surface acoustic wave device as claimed in claim 15, in which said zinc oxide layer has polycrystalline form and an angle between the (0001) axis of said polycrystalline and the normal direction of said α-Al 2 O 3 base is less than 10°.
References Cited (Backward Citations)
US4038615A
Cited
US4037176A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-10-11 | 1986-04-12 | 1986-10-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-10-11 | 1990-04-12 | 1990-10-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-10-11 | 1994-04-12 | 1994-10-12 | $7700.00 | Window Closed / Lapsed |