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US4352839A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of forming a layer of polymethyl methacrylate on a surface of silicon dioxide

Assignee: Intersil Corp
•
Filing: 1981-05-26
•
Granted: 1982-10-05
•
Expires: 2001-05-26
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Abstract

Abstract A method of enhancing the adhesion of polymethyl methacrylate to a surface of silicon dioxide utilizing a solution of carboxylic acid is described.

Inventors

  • 👤 Daniel R. Olson
  • 👤 Bruce F. Griffing
  • 👤 James F. Norton

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 03:22
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; B; B05; B05D; B05D1/00; B05D1/002; B05D1/005; H10P14/65; H10P14/6502; H10P14/6506; H10P14/68; H10P14/683; B05D3/00; B05D3/02; B05D3/0254; B05D3/10; B05D3/104

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 139 words
A method of forming a layer of polymethyl methacrylate on a surface of silicon dioxide of a substrate comprising: treating said surface of silicon dioxide with a solution of carboxylic acid and thereafter drying said surface, depositing a solution of polymethyl methacrylate on the treated surface of silicon dioxide, spinning said substrate with said solution of polymethyl methacrylate on said surface of silicon dioxide at a speed and for a time to spread said solution over said surface and to remove the solvent of said solution of polymethyl methacrylate thereby forming said layer of polymethyl methacrylate on said surface of silicon dioxide, heating said layer of polymethyl methyacrylate on said surface of silicon dioxide at a temperature and for a time to remove residue of the solvent of said solution of polymethyl methacrylate in said layer of polymethyl methacrylate.
Claim 2
Independent Claim 139 words
A method of forming a layer of polymethyl methacrylate on a surface of silicon dioxide of a substrate comprising: treating said surface of silicon dioxide with a solution of carboxylic acid and thereafter drying said surface, depositing a solution of polymethyl methacrylate on the treated surface of silicon dioxide, spinning said substrate with said solution of polymethyl methacrylate on said surface of silicon dioxide at a speed and for a time to spread said solution over said surface and to remove the solvent of said solution of polymethyl methacrylate thereby forming said layer of polymethyl methacrylate on said surface of silicon dioxide, heating said layer of polymethyl methyacrylate on said surface of silicon dioxide at a temperature and for a time to remove residue of the solvent of said solution of polymethyl methacrylate in said layer of polymethyl methacrylate.
Claim 3
Dependent Claim 13 words
The method of claim 1 in which said carboxylic acid is acetic acid.
Claim 4
Dependent Claim 55 words
The method of claim 2 in which said surface of silicon dioxide of said substrate is treated with said solution of acetic acid by depositing said solution of acetic acid on said surface of silicon dioxide and thereafter spinning said substrate at a speed and for a time to dry said surface of silicon dioxide.
Claim 5
Dependent Claim 16 words
The method of claim 2 in which the solvent of said acetic acid solution is water.
Claim 6
Dependent Claim 16 words
The method of claim 2 in which said solvent of said acetic acid solution is toluene.
Claim 7
Dependent Claim 16 words
The method of claim 2 in which said solution of acetic acid is a dilute solution.
Claim 8
Dependent Claim 17 words
The method of claim 1 in which the solvent of said solution of polymethyl methacrylate is toluene.
Claim 9
Dependent Claim 17 words
The method of claim 1 in which the solvent of said solution of polymethyl methacrylate is chlorobenzene.
Claim 10
Dependent Claim 29 words
The method of claim 1 in which the heating of said substrate is done at a temperature less than the temperature at which significant decomposition of polymethyl methacrylate occurs.

References Cited (Backward Citations)

US3573950A Cited
US3652333A Cited
US3911169A Cited
US4268610A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1985-10-04 1986-04-05 1986-10-05 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1989-10-04 1990-04-05 1990-10-05 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1993-10-04 1994-04-05 1994-10-05 $7700.00 Window Closed / Lapsed

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