US4348472A
Expired / Lapsed
US
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Method of applying a layer in accordance with a pattern on a substrate, a negative resist material and a substrate coated with the resist
Assignee: US Philips Corp
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Filing: 1980-09-02
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Granted: 1982-09-07
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Expires: 2000-09-02
Abstract
Abstract A method of providing a negative electron and/or X-ray resist material on a substrate comprising applying a layer of resist material to the substrate, exposing the layer to a pattern of electrons and/or X-rays and removing the unexposed portions of the layer of resist material in which method the resist material comprises a polyvinylcarbazole compound which (a) contains a polymer and/or a copolymer of the formula ##STR1## in which n exceeds 30 which is halogenated in the nucleus or (b) contains a mixture of the copolymer optionally halogenated in the nucleus with a bisazide of the formula N.sub.3 RN.sub.3 in which R represents an organic residue.
Inventors
- 👤 Jannes C. Jagt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 03:10
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/008; G03F7/012; G03F7/0125; C; C08; C08F; C08F126/00; C08F126/06; C08F126/12; C08F20/00; C08F20/02; C08F20/10; C08F20/12; G03F7/038; Y; Y10; Y10S; Y10S430/00; Y10S430/1053; Y10S430/1055; Y10S430/106; Y10S430/108; Y10S430/128; Y10S430/167
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
149 words
In the method for forming a pattern layer on a substrate wherein a layer of a polymeric material containing resist material is applied onto the substrate, the resist material is selectively exposed to electrons or to X-rays in accordance with a pattern and the unexposed portion of the resist material is removed, the improvement wherein the polymeric material is selected from the group consisting of hetero-aromatic halogenated derivatives of the vinyl carbazole polymer defined by formula 1 of the drawing where n exceeds 30, the vinyl carbazole polymer defined by formula 1 of the drawing where n exceeds 30 and copolymers thereof, and present at least when the polymeric material is other than a hetro-aromatic halogenated derivative of the vinyl carbazole polymer, a bisazide as defined by formula 2 of the drawing wherein R is an organic residue as defined by formulae 3, 4 or 5 of the drawing.
Claim 2
Dependent Claim
149 words
In the method for forming a pattern layer on a substrate wherein a layer of a polymeric material containing resist material is applied onto the substrate, the resist material is selectively exposed to electrons or to X-rays in accordance with a pattern and the unexposed portion of the resist material is removed, the improvement wherein the polymeric material is selected from the group consisting of hetero-aromatic halogenated derivatives of the vinyl carbazole polymer defined by formula 1 of the drawing where n exceeds 30, the vinyl carbazole polymer defined by formula 1 of the drawing where n exceeds 30 and copolymers thereof, and present at least when the polymeric material is other than a hetro-aromatic halogenated derivative of the vinyl carbazole polymer, a bisazide as defined by formula 2 of the drawing wherein R is an organic residue as defined by formulae 3, 4 or 5 of the drawing.
Claim 3
Dependent Claim
24 words
The method of claim 1 wherein the polymeric material consists of a poly (N-vinylcarbazole) halogenated with 0.05 to 2.0 halogen atoms per carbazole group.
Claim 4
Dependent Claim
19 words
The method of claim 2 wherein the poly (N-vinylcarbazole) contains from 0.05 to 2.0 bromine atoms per carbazole group.
Claim 5
Dependent Claim
84 words
A negative electron and/or X-ray polymeric material containing resist material which resist material comprises a mixture of a bisazide defined by formula 2 or the drawing wherein R is an organic residue as defined by formulae 3, 4 or 5 of the drawing and a polymeric material consisting of a polyvinyl carbazole as defined by formula 1 of the drawing wherein n exceeds 30, a hetero-aromatic halogenated derivative of said polyvinyl carbazole or a copolymer of said polyvinyl carbazole and said halogenated polyvinyl carbazole.
Claim 6
Dependent Claim
84 words
A negative electron and/or X-ray polymeric material containing resist material which resist material comprises a mixture of a bisazide defined by formula 2 or the drawing wherein R is an organic residue as defined by formulae 3, 4 or 5 of the drawing and a polymeric material consisting of a polyvinyl carbazole as defined by formula 1 of the drawing wherein n exceeds 30, a hetero-aromatic halogenated derivative of said polyvinyl carbazole or a copolymer of said polyvinyl carbazole and said halogenated polyvinyl carbazole.
Claim 7
Dependent Claim
30 words
A negative resist material as claimed in claim 4, wherein the polymeric material is a non-halogenated poly (n-vinyl carbozole) and 0.5-10 percent by weight of 4, 4' diazidostilbene is present.
Claim 8
Dependent Claim
32 words
A substrate provided with a resist layer, characterized in that the substrate has been provided with a resist layer consisting of the resist material as claimed in claim 4, or claim 5.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-09-06 | 1986-03-08 | 1986-09-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-09-06 | 1990-03-08 | 1990-09-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-09-06 | 1994-03-08 | 1994-09-07 | $7700.00 | Window Closed / Lapsed |