US4345218A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Two stage thermal shutdown
Assignee: National Semiconductor Corp
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Filing: 1980-09-08
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Granted: 1982-08-17
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Expires: 2000-09-08
Abstract
Abstract In an amplifier circuit the output devices are thermally coupled to a shutdown circuit. A first latch is designed to operate at a first high temperature excursion. The first latch operation acts to shut the output devices off and to invoke a second latch. The second latch operates between a low temperature and a second high temperature that is below the first high temperature. Thus, after the first latch operates, the second latch will operate to cycle between a low temperature whereupon it energizes the output devices and a high temperature at which it deenergizes the output devices. By this action, the circuit will permit only one high temperature peak after which it will cycle between a lower high temperature peak and a low temperature. This avoids repeated cycling to a high temperature that could be deleterious to the circuit devices or the package in which they are housed.
Inventors
- 👤 James S. Congdon
- 👤 Tim D. Isbell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:34
CPC Classifications
H; H02; H02H; H02H5/00; H02H5/04; H02H5/044; H03; H03F; H03F1/00; H03F1/52
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
190 words
A circuit for protecting a semiconductor device from temperature increasing overloads, said circuit acting to shut said device off when its temperature exceeds a maximum value and then acting to turn said device on when the temperature has declined to a lower value, said circuit comprising: means for thermally coupling at least portions of said circuit to said device; voltage source means having a controlled and repeatable temperature coefficient of voltage; disabling means coupled to said device and responsive to a control signal; first latch means responsive to said voltage source means, coupled to said disabling means to supply said control signal, and operative to turn said device off when said device temperature exceeds a predetermined first maximum value; and second latch means responsive to said first latch means and to said voltage source, said second latch means being coupled to said disabling means to turn said device off when said device temperature exceeds a predetermined second maximum temperature that is substantially lower than said first maximum temperature, whereby said circuit will permit an excursion to said first maximum temperature and will thereafter limit excursions to said second maximum temperature.
Claim 2
Dependent Claim
190 words
A circuit for protecting a semiconductor device from temperature increasing overloads, said circuit acting to shut said device off when its temperature exceeds a maximum value and then acting to turn said device on when the temperature has declined to a lower value, said circuit comprising: means for thermally coupling at least portions of said circuit to said device; voltage source means having a controlled and repeatable temperature coefficient of voltage; disabling means coupled to said device and responsive to a control signal; first latch means responsive to said voltage source means, coupled to said disabling means to supply said control signal, and operative to turn said device off when said device temperature exceeds a predetermined first maximum value; and second latch means responsive to said first latch means and to said voltage source, said second latch means being coupled to said disabling means to turn said device off when said device temperature exceeds a predetermined second maximum temperature that is substantially lower than said first maximum temperature, whereby said circuit will permit an excursion to said first maximum temperature and will thereafter limit excursions to said second maximum temperature.
Claim 3
Dependent Claim
26 words
The circuit of claim 1, wherein said second latch means includes means for turning said device on when its temperature reaches a predetermined low temperature value.
Claim 4
Dependent Claim
29 words
The circuit of claim 2, wherein said second latch is current responsive with said second maximum and said low temperatures are ratioed by geometrical means in said second latch.
Claim 5
Dependent Claim
26 words
The circuit of claim 3, wherein the current applied to said second latch is obtained from a first transistor that is thermally coupled to said device.
Claim 6
Dependent Claim
53 words
The circuit of claim 1 in which said first latch includes a second transistor that is thermally coupled to said device and is biased at a fraction of said voltage source means output, said fraction being set so that said first latch means is biased off at temperatures below said first maximum value.
Claim 7
Dependent Claim
30 words
The circuit of claim 5, wherein said first latch comprises said second transistor coupled to a third transistor, complementary to said second transistor and connected thereto in a latching configuration.
References Cited (Backward Citations)
US4092693A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-08-16 | 1986-02-15 | 1986-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-08-16 | 1990-02-15 | 1990-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-08-16 | 1994-02-15 | 1994-08-17 | $7700.00 | Window Closed / Lapsed |