Method of preparing crystalline silica polymorph

Claim 2

A process for hydrothermally preparing a crystalline silica polymorph which comprises: (1) subjecting an aqueous reaction mixture to high shear mixing for 4 to 100 hours at a temperature of from 250° to 380° F., said reaction mixture containing from 2 to 6 weight percent of sodium oxide, from 8 to 16 weight percent of silicon oxide, from 0.01 to 0.25 weight percent of disodium 4-dodecylated oxydibenzene sulfonate, from 2 to 5 weight percent of anhydrous sulfuric acid, from 0.5 to 3 weight percent of sodium chloride and either from 6 to 13 weight percent of tetrapropyl ammonium bromide or a mixture which comprises from 2 to 4 weight percent of tripropylamine, from 1 to 3 weight percent of 1-bromopropane and from 3 to 6 weight percent of methylethyl ketone, and (2) crystallizing said silica polymorph during said high shear mixing, wherein said crystalline silica polymorph after calcination at 1,000° F. for 16 hours, has as the four strongest d-values of its X-ray diffraction pattern, d=11.05, d=9.96, d=3.82 and d=3.34.

Claim 3

The process according to claim 1 wherein the silica polymorph is prepared under a pressure of from 15 to 300 p.s.i.g.

Claim 4

The process according to claim 1 wherein the high shear mixing comprises agitation equivalent to a mixing blade peripheral speed of from 360 to 900 ft/minute and a mixture velocity gradient of from 7,000 to 18,000 ft/minute/ft.

Claim 5

A process for hydrothermally preparing a crystalline silica polymorph which comprises: (1) forming an aqueous reaction mixture by admixing from 3 to 5 weight percent of sodium oxide, from 10 to 13 weight percent of silicon oxide, from 0.02 to 0.20 weight percent of disodium 4-dodecylated oxydibenzene sulfonate, from 3 to 4 weight percent of anhydrous sulfuric acid, from 1 to 3 weight percent of sodium chloride, and either from 7 to 11 weight percent of tetrapropyl ammonium bromide or a mixture comprising from 2 to 3 weight percent of tripropylamine, from 2 to 3 weight percent of 1-bromopropane and from 3 to 5 weight percent of methyl ethyl ketone, (2) subjecting said reaction mixture to high shear mixing for 4 to 100 hours at a temperature of from 250° to 340° F., and (3) crystallizing said silica polymorph during said high shear mixing, wherein said crystalline silica polymorph after calcination at 1,000° F. for 16 hours, has as the four strongest d-values of its X-ray diffraction pattern, d=11.05, d=9.96, d=3.82 and d=3.34.

Claim 6

A process for hydrothermally preparing a crystalline silica polymorph which comprises: (1) forming an aqueous reaction mixture by admixing from 3 to 5 weight percent of sodium oxide, from 10 to 13 weight percent of silicon oxide, from 0.02 to 0.20 weight percent of disodium 4-dodecylated oxydibenzene sulfonate, from 3 to 4 weight percent of anhydrous sulfuric acid, from 1 to 3 weight percent of sodium chloride, and either from 7 to 11 weight percent of tetrapropyl ammonium bromide or a mixture comprising from 2 to 3 weight percent of tripropylamine, from 2 to 3 weight percent of 1-bromopropane and from 3 to 5 weight percent of methyl ethyl ketone, (2) subjecting said reaction mixture to high shear mixing for 4 to 100 hours at a temperature of from 250° to 340° F., and (3) crystallizing said silica polymorph during said high shear mixing, wherein said crystalline silica polymorph after calcination at 1,000° F. for 16 hours, has as the four strongest d-values of its X-ray diffraction pattern, d=11.05, d=9.96, d=3.82 and d=3.34.

Claim 7

The process according to claim 4 wherein the silica polymorph is prepared under a pressure of from 15 to 200 p.s.i.g.

Claim 8

The process according to claim 4 wherein the high shear mixing comprises agitation equivalent to a mixing blade peripheral speed of from 360 to 700 ft/minute and a mixture velocity gradient of from 7,000 to 14,000 ft/minute/ft.

Claim 9

A process for hydrothermally preparing a crystalline silica polymorph which comprises: (1) forming an aqueous reaction mixture by admixing from 3 to 5 weight percent of sodium oxide, from 10 to 13 weight percent of silicon oxide, from 0.02 to 0.20 weight percent of disodium 4-dodecylated oxydibenzene sulfonate, from 3 to 4 weight percent of anhydrous sulfuric acid, from 1 to 3 weight percent of sodium chloride, and either from 7 to 11 weight percent of tetrapropyl ammonium bromide or a mixture comprising from 2 to 3 weight percent of tripropylamine, from 2 to 3 weight percent of 1-bromopropane and from 3 to 5 weight percent of methyl ethyl ketone, (2) subjecting said reaction mixture to high shear mixing which comprises agitation equivalent to a mixing blade peripheral speed of from 360 to 700 ft/minute and a mixture velocity gradient of from 7,000 to 14,000 ft/minute/ft, at a temperature of from 250° to 340° F. and a pressure of from 15 to 200 p.s.i.g., for 4 to 100 hours, and (3) crystallizing said silica polymorph during said high shear mixing, wherein said crystalline silica polymorph after calcination at 1,000° F. for 16 hours, has as the four strongest d-values of its X-ray diffraction pattern, d=11.05, d=9.96, d=3.82 and d=3.34.

Claim 10

A process for hydrothermally preparing a crystalline silica polymorph which comprises: (1) forming an aqueous reaction mixture by admixing from 3 to 5 weight percent of sodium oxide, from 10 to 13 weight percent of silicon oxide, from 0.02 to 0.20 weight percent of disodium 4-dodecylated oxydibenzene sulfonate, from 3 to 4 weight percent of anhydrous sulfuric acid, from 1 to 3 weight percent of sodium chloride, and either from 7 to 11 weight percent of tetrapropyl ammonium bromide or a mixture comprising from 2 to 3 weight percent of tripropylamine, from 2 to 3 weight percent of 1-bromopropane and from 3 to 5 weight percent of methyl ethyl ketone, (2) subjecting said reaction mixture to high shear mixing which comprises agitation equivalent to a mixing blade peripheral speed of from 360 to 700 ft/minute and a mixture velocity gradient of from 7,000 to 14,000 ft/minute/ft, at a temperature of from 250° to 340° F. and a pressure of from 15 to 200 p.s.i.g., for 4 to 100 hours, and (3) crystallizing said silica polymorph during said high shear mixing, wherein said crystalline silica polymorph after calcination at 1,000° F. for 16 hours, has as the four strongest d-values of its X-ray diffraction pattern, d=11.05, d=9.96, d=3.82 and d=3.34.