US4342967A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High voltage, high frequency amplifier
Assignee: Verizon Laboratories Inc
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Filing: 1980-05-01
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Granted: 1982-08-03
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Expires: 2000-05-01
Abstract
Abstract A high frequency amplifier utilizes series-connected transistors to achieve high voltage class C operation. High frequency input power is coupled to the gate of a first FET which is normally biased off. The source of a second FET is coupled to the drain of the first FET. The drain of the second FET, which forms the output of the amplifier, is coupled through a radio frequency choke to a supply voltage. The gate of the second FET is dc biased at about one half of the supply voltage. A capacitor coupled between the gate of the second FET and ground controls the level of high frequency power applied to the second FET. The amplifier can be operated at a dc voltage which is approximately equal to one half the sum of the individual breakdown voltages of the serially connected FET's.
Inventors
- 👤 Robert J. Regan
- 👤 Paul O. Haugsjaa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 23:32
CPC Classifications
H; H03; H03F; H03F1/00; H03F1/08; H03F1/22; H03F1/226; H03F3/00; H03F3/189; H03F3/19; H03F3/193; H10; H10W; H10W44/00; H10W44/20; H10W44/226; H10W72/00; H10W72/071; H10W72/075; H10W72/07551; H10W72/07554; H10W72/50; H10W72/541; H10W72/5445; H10W72/547; H10W72/5473; H10W72/5475; H10W72/551; H10W72/552; H10W72/5524; H10W72/5525; H10W90/00; H10W90/701; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
275 words
A high frequency amplifier comprising: an input terminal for receiving high frequency power; a first transistor having a first electrode coupled to said input terminal, a second electrode, and a third electrode coupled to a reference potential; first dc biasing means, coupled to said first electrode of said first transistor, for applying thereto a dc bias potential substantially equal to said reference potential; a second transistor having first and second electrodes and a third electrode coupled to said second electrode of said first transistor, said first and second transistors each having an associated second to third electrode breakdown voltage, an associated second to first electrode interelectrode capacitance, and an associated third to first electrode interelectrode capacitance; an output terminal, coupled to said second electrode of said second transistor, for delivering high frequency power to a load; inductor means coupled between said second electrode of said second transistor and a source of operating potential; impedance means coupled between said second and first electrode of said second transistor; capacitive means coupled between said first electrode of said second transistor and said reference potential, and cooperating with said impedance means and said second to first electrode interelectrode capacitance of said second transistor to provide feedback between said second and first electrodes of said second transistor; and second dc biasing means, coupled to said first electrode of said second transistor, and said capacitive means for applying thereto a dc bias potential of substantially one half of said operating potential and said reference potential; whereby the operating potential of said amplifier can be substantially equal to one half the sum of said breakdown voltages of said first and second transistors.
Claim 2
Dependent Claim
275 words
A high frequency amplifier comprising: an input terminal for receiving high frequency power; a first transistor having a first electrode coupled to said input terminal, a second electrode, and a third electrode coupled to a reference potential; first dc biasing means, coupled to said first electrode of said first transistor, for applying thereto a dc bias potential substantially equal to said reference potential; a second transistor having first and second electrodes and a third electrode coupled to said second electrode of said first transistor, said first and second transistors each having an associated second to third electrode breakdown voltage, an associated second to first electrode interelectrode capacitance, and an associated third to first electrode interelectrode capacitance; an output terminal, coupled to said second electrode of said second transistor, for delivering high frequency power to a load; inductor means coupled between said second electrode of said second transistor and a source of operating potential; impedance means coupled between said second and first electrode of said second transistor; capacitive means coupled between said first electrode of said second transistor and said reference potential, and cooperating with said impedance means and said second to first electrode interelectrode capacitance of said second transistor to provide feedback between said second and first electrodes of said second transistor; and second dc biasing means, coupled to said first electrode of said second transistor, and said capacitive means for applying thereto a dc bias potential of substantially one half of said operating potential and said reference potential; whereby the operating potential of said amplifier can be substantially equal to one half the sum of said breakdown voltages of said first and second transistors.
Claim 3
Dependent Claim
29 words
A high frequency amplifier as defined in claim 1 wherein said reference potential is ground potential and wherein said bias potential is about one half of said operating potential.
Claim 4
Dependent Claim
24 words
A high frequency amplifier as defined in claim 1 wherein said second dc biasing means includes resistive divider means for dividing the operating potential.
Claim 5
Dependent Claim
29 words
A high frequency amplifier as defined in claim 1 wherein said first dc biasing means includes inductor means coupled between said first and third electrodes of said first transistor.
Claim 6
Dependent Claim
42 words
A high frequency amplifier as defined in claims 1, 2, 3 or 24 wherein said first and second transistors are field effect transistors, said first electrodes are gate electrodes, said second electrodes are drain electrodes, and said third electrodes are source electrodes.
Claim 7
Dependent Claim
36 words
A high frequency amplifier as defined in claims 1, 2, 3 or 4 wherein said first and second transistors are static induction transistors, said second electrodes are drain electrodes, and said third electrodes are source electrodes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-08-02 | 1986-02-01 | 1986-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-08-02 | 1990-02-01 | 1990-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-08-02 | 1994-02-01 | 1994-08-03 | $7700.00 | Window Closed / Lapsed |