Process for making solid-state color imaging device

Claim 2

In a process for making a color imaging device, said color imaging device comprising an array of charge-handling semiconductive photosensors with an array of color filter elements superimposed in micro-registration with the sensing area of said photosensors, the process comprising the steps of: (1) successively coating on an array of semiconductive photosensors a plurality of photoresponsive layers; (2) subjecting each photoresponsive layer in succession to active radiation whereby to provide an exposed area of that particular layer; (3) removing unexposed photoresponsive coating of each layer in succession; and (4) dyeing exposed areas of each layer of said coating in succession to obtain a series of chromatic filter elements.

Claim 3

In a process for making a color imaging device, said color imaging device comprising an array of charge-handling semiconductive photosensors with an array of color filter elements superimposed in micro-registration with the sensing area of said photosensors, the process comprising the steps of: (1) applying a first coating of photoresponsive material on said array of semiconductive photosensors, said photoresponsive material being adapted to be hardened as a result of photoexposure to radiation incident on said material; (2) exposing said first photoresponsive coating to active radiation incident in a pattern representing a first set of filter elements to provide selectively exposed areas of said first coating; (3) removing unexposed photoresponsive coating; (4) dyeing the remaining areas of said first coating with a first color to obtain a first series of chromatic filter elements; (5) applying a second coating of photoresponsive material on said array of semiconductive photosensors; (6) exposing said second photoresponsive coating to active radiation incident in a pattern representing a second set of filter elements to provide selectively exposed areas of said second coating; (7) removing unexposed photoresponsive coating; (8) dyeing the remaining areas of said second coating with a second color to obtain a second series of chromatic filter elements; (9) applying a third coating of photoresponsive material on said array of semiconductive photosensors; (10) exposing said third photoresponsive coating to active radiation incident in a pattern representing a third set of filter elements to provide selectively exposed areas of said third coating; (11) removing unexposed photoresponsive coating; and, (12) dyeing the remaining areas of said third coating with a third color to obtain a third series of chromatic filter elements.

Claim 4

In a process for making a color imaging device, said color imaging device comprising an array of charge-handling semiconductive photosensors with an array of color filter elements superimposed in micro-registration with the sensing area of said photosensors, the process comprising the steps of: (1) applying a first coating of photoresponsive material on said array of semiconductive photosensors, said photoresponsive material being adapted to be hardened as a result of photoexposure to radiation incident on said material; (2) exposing said first photoresponsive coating to active radiation incident in a pattern representing a first set of filter elements to provide selectively exposed areas of said first coating; (3) removing unexposed photoresponsive coating; (4) dyeing the remaining areas of said first coating with a first color to obtain a first series of chromatic filter elements; (5) applying a second coating of photoresponsive material on said array of semiconductive photosensors; (6) exposing said second photoresponsive coating to active radiation incident in a pattern representing a second set of filter elements to provide selectively exposed areas of said second coating; (7) removing unexposed photoresponsive coating; (8) dyeing the remaining areas of said second coating with a second color to obtain a second series of chromatic filter elements; (9) applying a third coating of photoresponsive material on said array of semiconductive photosensors; (10) exposing said third photoresponsive coating to active radiation incident in a pattern representing a third set of filter elements to provide selectively exposed areas of said third coating; (11) removing unexposed photoresponsive coating; and, (12) dyeing the remaining areas of said third coating with a third color to obtain a third series of chromatic filter elements.

Claim 5

A process as defined in claim 2, including the step of coating a protective polymeric layer on the external surface of said optical filter elements.

Claim 6

A process as defined in claim 2, wherein one of said colors comprises red, one of said colors comprises green, and one of said colors comprises blue.

Claim 7

A process as defined in claim 2, wherein at least one of said photoresponsive coatings comprises a polymer selected from the group consisting of potassium, sodium and ammonium dichromate sensitized gelatin.

Claim 8

A process as defined in claim 2, wherein an adhesive laquer is interposed between each of said photoresponsive coatings and the immediately preceding coating.

Claim 9

The process of claim 2 wherein said exposing steps comprise exposing the successive photosensitive coatings through different photomasks representing said first, second and third sets of said filter elements respectively.

Claim 10

The process of claim 2 wherein said exposing steps comprise exposing the successive photosensitive coatings at different angles through a lenticular array to respectively provide exposed areas representing said first, second and third sets of filter elements.

Claim 11

A color imaging device, an array of charge-handling semiconductive photosensors having an array of color filter elements superimposed in micro-registration with the sensing area of said photosensors, constructed by the steps of: (1) applying a first coating of photoresponsive material on said array of semiconductive photosensors, said photoresponsive material being adapted to be hardened as a result of selective photoexposure to radiation incident on said material; (2) exposing said first photoresponsive coating to active radiation in a pattern representing a first set of filter elements to provide selectively exposed areas of said first coating; (3) removing unexposed photoresponsive coating; p1 (4) dyeing the remaining areas of said first coating with a first color to obtain a first series of chromatic filter elements; (5) applying a second coating of photoresponsive material on said array of semiconductive photosensors; (6) exposing said second photoresponsive coating to active radiation in a pattern representing a second set of filter elements to provide selectively exposed areas of said second coating; (7) removing unexposed photoresponsive coating; (8) dyeing the remaining areas of said second coating with a second color to obtain a second series of chromatic filter elements; (9) applying a third coating of photoresponsive material on said array of semiconductive photosensors; (10) exposing said third photoresponsive coating to active radiation in a pattern representing a third set of filter elements to provide selectively exposed areas of said third coating; (11) removing unexposed photoresponsive coating; and, (12) dyeing the remaining areas of said third coating with a third color to obtain a third series of chromatic filter elements an adhesive layer between each of said photoresponsive coatings.

Claim 12

A color imaging device, an array of charge-handling semiconductive photosensors having an array of color filter elements superimposed in micro-registration with the sensing area of said photosensors, constructed by the steps of: (1) applying a first coating of photoresponsive material on said array of semiconductive photosensors, said photoresponsive material being adapted to be hardened as a result of selective photoexposure to radiation incident on said material; (2) exposing said first photoresponsive coating to active radiation in a pattern representing a first set of filter elements to provide selectively exposed areas of said first coating; (3) removing unexposed photoresponsive coating; p1 (4) dyeing the remaining areas of said first coating with a first color to obtain a first series of chromatic filter elements; (5) applying a second coating of photoresponsive material on said array of semiconductive photosensors; (6) exposing said second photoresponsive coating to active radiation in a pattern representing a second set of filter elements to provide selectively exposed areas of said second coating; (7) removing unexposed photoresponsive coating; (8) dyeing the remaining areas of said second coating with a second color to obtain a second series of chromatic filter elements; (9) applying a third coating of photoresponsive material on said array of semiconductive photosensors; (10) exposing said third photoresponsive coating to active radiation in a pattern representing a third set of filter elements to provide selectively exposed areas of said third coating; (11) removing unexposed photoresponsive coating; and, (12) dyeing the remaining areas of said third coating with a third color to obtain a third series of chromatic filter elements an adhesive layer between each of said photoresponsive coatings.

Claim 13

The product as defined in claim 9, including the step of coating a protective polymeric layer on the external surface of said optical filter elements.