US4338619A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Flip-flop circuit
Assignee: Sony Corp
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Filing: 1980-06-03
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Granted: 1982-07-06
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Expires: 2000-06-03
Abstract
Abstract A flip-flop circuit is disclosed which has a first semiconductor region of a first conductivity type, injector and base regions of a second conductivity type in the first region, and collector region of the first conductivity type in the base region. In this case, the first, base and collector regions constitute a gate transistor, two of the gate transistors constitute a flip-flop circuit, and each of the transistors has a predetermined distance relation among the injector and collector regions and base contacts in such a manner that the inherent difference of ON and OFF speeds between the transistors causes the flip-flop circuit to operate without causing unnecessary delay.
Inventors
- 👤 Masayuki Miyake
- 👤 Takeo Sekino
- 👤 Masashi Takeda
- 👤 Yasuharu Baba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:01
CPC Classifications
H; H03; H03K; H03K3/00; H03K3/02; H03K3/26; H03K3/28; H03K3/281; H03K3/286; H03K3/288; H03K3/027; H03K3/037; H10; H10D; H10D84/00; H10D84/60; H10D84/65
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
455 words
A T flip-flop circuit comprising, a substrate of semiconductor material of a first conductivity type, a first generally rectangularly-shaped region of a second conductivity type formed in said substrate, second through sixth generally rectangularly-shaped regions of a second conductivity type formed parallel to each other in said substrate and the longitudinal axes of said second through sixth rectangularly-shaped regions extending normal to the longitudinal axis of said first rectangularly-shaped region, a plurality of collector regions of first conductivity type formed in said second through sixth rectangularly-shaped regions, first ones of said plurality of collector regions formed in said second, fourth and fifth rectangularly-shaped regions and spaced a distance D 1 from said first rectangularly-shaped region, a second one of said plurality of collector regions formed in said fourth rectangularly-shaped region and spaced a distance of D 2 from said first rectangularly-shaped region, third ones of said plurality of collector regions formed in said third, fourth and sixth rectangularly-shaped regions and spaced a distance D 3 from said first rectangularly-shaped region, fourth ones of said plurality of collector regions formed in said second and fifth rectangularly-shaped regions and s-paced a distance D 4 from said first rectangularly-shaped region, fifth ones of said plurality of collector regions formed in said third and sixth rectangularly-shaped regions and spaced a distance D 5 from said first rectangularly-shaped region and D 1 <D 2 <D 3 <D 4 <D 5 , a plurality of base regions located in said second through sixth rectangularly-shaped regions with the base regions in the second and fifth rectangularly-shaped regions located at a distance of D 3 , the base regions in the third and sixth rectangularly-shaped regions located at a distance D 1 , the base region in the fourth rectangularly-shaped region located at distance D 4 , the base region in said fifth rectangular region located at a distance D 3 , and said base region in said third rectangularly-shaped region electrically connected to said first ones of said plurality of collector regions in said second and fourth rectangularly-shaped regions, said base region in said fourth rectangularly-shaped region electrically connected to the fourth ones of said plurality of collector regions in said second and fifth rectangularly-shaped regions and to said fifth one of said collector region in said third rectangularly-shaped region, said base region in said fifth rectangularly-shaped region electrically connected to said third ones of said plurality of collector regions in said third and fourth rectangularly-shaped region, and to the fifth one of said collector region in said sixth rectangularly-shaped region, said base region in said sixth rectangularly-shaped region electrically connected to said first collector region in said fifth rectangularly-shaped region and to said second collector region in said fourth rectangularly-shaped region.
Claim 2
Dependent Claim
455 words
A T flip-flop circuit comprising, a substrate of semiconductor material of a first conductivity type, a first generally rectangularly-shaped region of a second conductivity type formed in said substrate, second through sixth generally rectangularly-shaped regions of a second conductivity type formed parallel to each other in said substrate and the longitudinal axes of said second through sixth rectangularly-shaped regions extending normal to the longitudinal axis of said first rectangularly-shaped region, a plurality of collector regions of first conductivity type formed in said second through sixth rectangularly-shaped regions, first ones of said plurality of collector regions formed in said second, fourth and fifth rectangularly-shaped regions and spaced a distance D 1 from said first rectangularly-shaped region, a second one of said plurality of collector regions formed in said fourth rectangularly-shaped region and spaced a distance of D 2 from said first rectangularly-shaped region, third ones of said plurality of collector regions formed in said third, fourth and sixth rectangularly-shaped regions and spaced a distance D 3 from said first rectangularly-shaped region, fourth ones of said plurality of collector regions formed in said second and fifth rectangularly-shaped regions and s-paced a distance D 4 from said first rectangularly-shaped region, fifth ones of said plurality of collector regions formed in said third and sixth rectangularly-shaped regions and spaced a distance D 5 from said first rectangularly-shaped region and D 1 <D 2 <D 3 <D 4 <D 5 , a plurality of base regions located in said second through sixth rectangularly-shaped regions with the base regions in the second and fifth rectangularly-shaped regions located at a distance of D 3 , the base regions in the third and sixth rectangularly-shaped regions located at a distance D 1 , the base region in the fourth rectangularly-shaped region located at distance D 4 , the base region in said fifth rectangular region located at a distance D 3 , and said base region in said third rectangularly-shaped region electrically connected to said first ones of said plurality of collector regions in said second and fourth rectangularly-shaped regions, said base region in said fourth rectangularly-shaped region electrically connected to the fourth ones of said plurality of collector regions in said second and fifth rectangularly-shaped regions and to said fifth one of said collector region in said third rectangularly-shaped region, said base region in said fifth rectangularly-shaped region electrically connected to said third ones of said plurality of collector regions in said third and fourth rectangularly-shaped region, and to the fifth one of said collector region in said sixth rectangularly-shaped region, said base region in said sixth rectangularly-shaped region electrically connected to said first collector region in said fifth rectangularly-shaped region and to said second collector region in said fourth rectangularly-shaped region.
Claim 3
Dependent Claim
22 words
A T flip-flop circuit according to claim 1 including an input lead connected to the base region in said second rectangularly-shaped region.
Claim 4
Dependent Claim
23 words
A T flip-flop circuit according to claim 2 including an output lead connected to said third collector region in said sixth rectangularly-shaped region.
Claim 5
Dependent Claim
382 words
A T flip-flop circuit comprising, a substrate of semiconductor material of a first conductivity type, a first generally rectangularly-shaped region of a second conductivity type formed in said substrate, second through sixth generally rectangularly-shaped regions of a second conductivity type formed parallel to each other in said substrate and the longitudinal axes of said second through sixth rectangularly-shaped regions extending normal to the longitudinal axis of said first rectangularly-shaped region, a plurality of coll-ctor regions of first conductivity type formed in said second through sixth rectangularly-shaped regions, first ones of said plurality of collector regions formed in said second, fourth and fifth rectangularly-shaped regions and spaced a distance D 1 from said first rectangularly-shaped region, a second one of said plurality of collector regions formed in said fourth rectangularly-shaped region and spaced a distance of D 2 from said first rectangularly-shaped region, third ones of said plurality of collector regions formed in said third, fourth and sixth rectangularly-shaped regions and spaced a distance D 3 from said first rectangularly-shaped region, fourth ones of said plurality of collector regions formed in said second, third, fifth and sixth rectangularly-shaped regions and spaced a distance D 4 from said first rectangularly-shaped region, and D 1 D 2 D 3 D 4 , a plurality of base regions located in said second through sixth rectangularly-shaped regions with the base regions in the second and fifth rectangularly-shaped regions located at a distance of D 3 , the base regions in the third and sixth rectangularly-shaped regions located at a distance D 1 , the base region in the fourth rectangularly-shaped region located at distance D 4 , and said base region in said third rectangularly-shaped region electrically connected to said first collector regions in said second and third rectangularly-shaped regions, said base region in said fourth rectangularly-shaped region electrically connected to said fourth collector regions in said second, third and fifth rectangularly-shaped regions, said base region in said fifth rectangularly-shaped region electrically connected to the third collector regions in said third and fourth rectangularly-shaped regions and to the fourth collector region in said sixth rectangularly-shaped region, and the base region in said sixth rectangularly-shaped region electrically connected to said second collector region in said fourth rectangularly-shaped region and the first collector region in said fifth rectangularly-shaped region.
Claim 6
Dependent Claim
382 words
A T flip-flop circuit comprising, a substrate of semiconductor material of a first conductivity type, a first generally rectangularly-shaped region of a second conductivity type formed in said substrate, second through sixth generally rectangularly-shaped regions of a second conductivity type formed parallel to each other in said substrate and the longitudinal axes of said second through sixth rectangularly-shaped regions extending normal to the longitudinal axis of said first rectangularly-shaped region, a plurality of coll-ctor regions of first conductivity type formed in said second through sixth rectangularly-shaped regions, first ones of said plurality of collector regions formed in said second, fourth and fifth rectangularly-shaped regions and spaced a distance D 1 from said first rectangularly-shaped region, a second one of said plurality of collector regions formed in said fourth rectangularly-shaped region and spaced a distance of D 2 from said first rectangularly-shaped region, third ones of said plurality of collector regions formed in said third, fourth and sixth rectangularly-shaped regions and spaced a distance D 3 from said first rectangularly-shaped region, fourth ones of said plurality of collector regions formed in said second, third, fifth and sixth rectangularly-shaped regions and spaced a distance D 4 from said first rectangularly-shaped region, and D 1 D 2 D 3 D 4 , a plurality of base regions located in said second through sixth rectangularly-shaped regions with the base regions in the second and fifth rectangularly-shaped regions located at a distance of D 3 , the base regions in the third and sixth rectangularly-shaped regions located at a distance D 1 , the base region in the fourth rectangularly-shaped region located at distance D 4 , and said base region in said third rectangularly-shaped region electrically connected to said first collector regions in said second and third rectangularly-shaped regions, said base region in said fourth rectangularly-shaped region electrically connected to said fourth collector regions in said second, third and fifth rectangularly-shaped regions, said base region in said fifth rectangularly-shaped region electrically connected to the third collector regions in said third and fourth rectangularly-shaped regions and to the fourth collector region in said sixth rectangularly-shaped region, and the base region in said sixth rectangularly-shaped region electrically connected to said second collector region in said fourth rectangularly-shaped region and the first collector region in said fifth rectangularly-shaped region.
Claim 7
Dependent Claim
22 words
A T flip-flop circuit according to claim 4 including an input lead connected to the base region in said second rectangularly-shaped region.
Claim 8
Dependent Claim
23 words
A T flip-flop circuit according to claim 5 including an output lead connected to the third collector region in said sixth rectangularly-shaped region.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-07-05 | 1986-01-04 | 1986-07-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-07-05 | 1990-01-04 | 1990-07-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-07-05 | 1994-01-04 | 1994-07-06 | $7700.00 | Window Closed / Lapsed |