Photoconductive target
Abstract
Abstract A photoconductive target having an electrode and a P-type conductive layer mainly made of Se and making rectifying contact at an interface with the electrode, with at least Te being doped in a portion of the P-type conductive layer. At least one metal fluoride forming shallow levels is doped in the region where the signal current is generated for the most part of the P-type conductive layer with an average concentration of not less than 50 ppm and not more than 5% by weight. The metal fluoride is preferably at least one selected from the group consisting of LiF, NaF, MgF 2 , CaF 2 , BaF 2 , AlF 3 , CrF 3 , MnF 2 , CoF 2 , PbF 2 , CeF 3 and TlF. The high light sticking of the photoconductive target can thus be considerably reduced.
Inventors
- 👤 Keiichi Shidara
- 👤 Naohiro Goto
- 👤 Tatsuro Kawamura
- 👤 Eikyu Hiruma
- 👤 Yohitsumu Ikeda
- 👤 Kenkichi Tanioka
- 👤 Tadaaki Hirai
- 👤 Yukio Takasaki
- 👤 Chushirou Kusano
- 👤 Tsuyoshi Uda
- 👤 Yasuhiko Nonaka
Bibliographic Details
Claims Analysis
Total Claims: 6References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-05-17 | 1985-11-16 | 1986-05-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-05-17 | 1989-11-16 | 1990-05-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-05-17 | 1993-11-16 | 1994-05-18 | $7700.00 | Window Closed / Lapsed |