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US4330182B1 Expired / Lapsed US ⏱️ 0.0 years remaining

Method of forming semiconducting materials and barriers

Assignee: Plasma Physics Corp
•
Filing: 1980-04-09
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Granted: 1999-09-07
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Expires: 2000-04-09
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Abstract

No abstract record available.

Inventors

  • 👤 John H Coleman

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 18:01
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/164; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/503; C23C16/505; C23C16/509; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32532; H01J37/32541; H01J37/32623; H10F10/17; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/52; Y02E10/548; Y02P; Y02P70/00; Y02P70/50

Claims Analysis

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References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2002-09-06 2003-03-08 2003-09-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2006-09-06 2007-03-08 2007-09-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2010-09-06 2011-03-08 2011-09-07 $7700.00 Window Closed / Lapsed

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