US4329703A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Lateral PNP transistor
Assignee: Advanced Micro Devices Inc
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Filing: 1980-04-18
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Granted: 1982-05-11
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Expires: 2000-04-18
Abstract
Abstract Shallow, boron implanted regions are formed by ion implanting. Disclosed is a PNP transistor device (lateral type) having a P type emitter region preferably made with a boron implant.
Inventors
- 👤 Ury Priel
- 👤 Jerry D. Gray
- 👤 Allen H. Frederick
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 15:13
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; G; G11; G11C; G11C17/00; G11C17/14; G11C17/16; H10B; H10B69/00; H10D1/00; H10D1/40; H10D1/43; H10D10/00; H10D10/60; H10D62/133; H10D62/134; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/615
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
93 words
A lateral PNP transistor device comprising, in combination, a base region of N type conductivity, an emitter region and a collector region of P type conductivity laterally spaced from each other located in surface portions of said base region, and separate planar surface electrical contacts to said base region to said emitter region and to said collector region, said emitter region having a depth of no greater than about 0.5 microns, said collector region having a greater depth than said emitter region and having a lower concentration of impurities than said emitter region.
Claim 2
Dependent Claim
93 words
A lateral PNP transistor device comprising, in combination, a base region of N type conductivity, an emitter region and a collector region of P type conductivity laterally spaced from each other located in surface portions of said base region, and separate planar surface electrical contacts to said base region to said emitter region and to said collector region, said emitter region having a depth of no greater than about 0.5 microns, said collector region having a greater depth than said emitter region and having a lower concentration of impurities than said emitter region.
Claim 3
Dependent Claim
19 words
A lateral PNP transistor device in accordance with 1 claim 1 wherein said emitter region having Boron implanted ions.
Claim 4
Dependent Claim
18 words
A lateral PNP transistor device in accordance with claim 1 wherein said collector region having Boron diffused atoms.
References Cited (Backward Citations)
US4005469A
Cited
US4109272A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-05-10 | 1985-11-09 | 1986-05-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-05-10 | 1989-11-09 | 1990-05-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-05-10 | 1993-11-09 | 1994-05-11 | $7700.00 | Window Closed / Lapsed |