US4320249A
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Heterojunction type semiconductor photoelectric conversion device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1980-08-12
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Granted: 1982-03-16
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Expires: 2000-08-12
Abstract
Abstract A heterojunction type semiconductor photoelectric conversion device which comprises a semiconductor layer, a light-transparent, conductive layer disposed on the semiconductor layer to form therebetween a heterojunction, and a conductive layer disposed on the semiconductor layer on the opposite side from the light-transparent, conductive layer, and in which when light is incident to the semiconductor layer from the outside of the light-transparent, conductive layer, a photo-electric conversion function is obtained by the presence of the barrier of the heterojunction formed between the semiconductor layer and the light-transparent, conductive layer. In such a heterojunction type semiconductor photoelectric conversion device, a light-transparent, current-permeable nitride layer is artificially formed in the barrier of the heterojunction formed between the semiconductor layer and the light-transparent, conductive layer. The light-transparent, current-permeable nitride layer is an insulating, semi-insulating or conductive layer. The insulating nitride layer is made of a silicon nitride. The semi-insulating nitride layer is made of a silicon nitride and a conductive metal nitride. The conductive nitride layer is made of a conductive metal nitride. In the abovesaid heterojunction type semiconductor photoelectric conversion device, the light-transparent, conductive layer is made of a light-transparent, conductive nitride, which is a conductive metal nitride.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 12:05
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/164; H10F10/12; H10F10/14; H10F10/17; H10F10/18; H10F77/00; H10F77/20; H10F77/244; H10F77/30; H10F77/306; H10F77/311; H10F77/315; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02E10/548
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
93 words
A heterojunction type semiconductor photoelectric conversion device which comprises a semiconductor layer, a light-transparent, conductive layer disposed on the semiconductor layer to form therebetween a heterojunction having a barrier, and a conductive layer disposed on the semiconductor layer on the opposite side from the light-transparent, conductive layer, characterized in that a light-transparent, current-permeable nitride layer is formed in the barrier of the heterojunction provided between the semiconductor layer and the light-transparent, conductive layer, the light-transparent, current-permeable nitride layer being insulating or semi-insulating and formed of a silicon nitride and a conductive metal nitride.
Claim 2
Dependent Claim
93 words
A heterojunction type semiconductor photoelectric conversion device which comprises a semiconductor layer, a light-transparent, conductive layer disposed on the semiconductor layer to form therebetween a heterojunction having a barrier, and a conductive layer disposed on the semiconductor layer on the opposite side from the light-transparent, conductive layer, characterized in that a light-transparent, current-permeable nitride layer is formed in the barrier of the heterojunction provided between the semiconductor layer and the light-transparent, conductive layer, the light-transparent, current-permeable nitride layer being insulating or semi-insulating and formed of a silicon nitride and a conductive metal nitride.
Claim 3
Dependent Claim
87 words
A heterojunction type semiconductor photoelectric conversion device which comprises a semiconductor layer, a light-transparent, conductive layer disposed on the semiconductor layer to form therebetween a heterojunction having a barrier, and a conductive layer disposed on the semiconductor layer on the opposite side from the light-transparent, conductive layer, characterized in that a light-transparent, current-permeable nitride layer is formed in the barrier of the heterojunction provided between the semiconductor layer and the light-transparent, conductive layer, the light-transparent, current-permeable nitride layer being conductive and formed of a conductive metal nitride.
Claim 4
Dependent Claim
87 words
A heterojunction type semiconductor photoelectric conversion device which comprises a semiconductor layer, a light-transparent, conductive layer disposed on the semiconductor layer to form therebetween a heterojunction having a barrier, and a conductive layer disposed on the semiconductor layer on the opposite side from the light-transparent, conductive layer, characterized in that a light-transparent, current-permeable nitride layer is formed in the barrier of the heterojunction provided between the semiconductor layer and the light-transparent, conductive layer, the light-transparent, current-permeable nitride layer being conductive and formed of a conductive metal nitride.
Claim 5
Dependent Claim
84 words
A heterojunction type semiconductor photoelectric conversion device which comprises a semiconductor layer, a light-transparent, conductive layer disposed on the semiconductor layer to form therebetween a heterojunction having a barrier, and a conductive layer disposed on the semiconductor layer on the opposite side from the light-transparent, conductive layer, characterized in that a light-transparent, current-permeable nitride layer is formed in the barrier of the heterojunction provided between the semiconductor layer and the light-transparent, conductive layer, the light-transparent, conductive layer being formed of a conductive metal nitride.
Claim 6
Dependent Claim
84 words
A heterojunction type semiconductor photoelectric conversion device which comprises a semiconductor layer, a light-transparent, conductive layer disposed on the semiconductor layer to form therebetween a heterojunction having a barrier, and a conductive layer disposed on the semiconductor layer on the opposite side from the light-transparent, conductive layer, characterized in that a light-transparent, current-permeable nitride layer is formed in the barrier of the heterojunction provided between the semiconductor layer and the light-transparent, conductive layer, the light-transparent, conductive layer being formed of a conductive metal nitride.
Claim 7
Dependent Claim
21 words
A heterojunction type semiconductor photoelectric conversion device according to claim 3, where the light-transparent, current-permeable nitride layer is insulating or semi-insulating.
Claim 8
Dependent Claim
23 words
A heterojunction type semiconductor photoelectric conversion device according to claim 4, where the insulating or semi-insulating nitride layer is formed of silicon nitride.
Claim 9
Dependent Claim
29 words
A heterojunction type semiconductor photoelectric conversion device according to claim 4, where the insulating or semi-insulating nitride layer is formed of a silicon nitride and a conductive metal nitride.
Claim 10
Dependent Claim
26 words
A heterojunction type semiconductor photoelectric conversion device according to claim 3, where the light-transparent, current-permeable nitride layer is conductive, and formed of a conductive metal nitride.
Claim 11
Dependent Claim
61 words
A heterojunction type semiconductor photoelectric conversion device which comprises a semiconductor layer, a light-transparent, conductive layer disposed on the semiconductor layer to form therebetween a heterojunction having a barrier, and a conductive layer disposed on the semiconductor layer on the opposite side from the light-transparent, conductive layer, characterized in that the light-transparent, conductive layer is formed of a conductive metal nitride.
Claim 12
Dependent Claim
61 words
A heterojunction type semiconductor photoelectric conversion device which comprises a semiconductor layer, a light-transparent, conductive layer disposed on the semiconductor layer to form therebetween a heterojunction having a barrier, and a conductive layer disposed on the semiconductor layer on the opposite side from the light-transparent, conductive layer, characterized in that the light-transparent, conductive layer is formed of a conductive metal nitride.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-03-15 | 1985-09-14 | 1986-03-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-03-15 | 1989-09-14 | 1990-03-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-03-15 | 1993-09-14 | 1994-03-16 | $7700.00 | Window Closed / Lapsed |