Process for producing polycrystalline silicon

Claim 2

In a process for producing high purity silicon by the thermal decomposition of halosilane, the improvement comprising: passing tribromosilane substantially undiluted through a bed of high purity silicon substrate particles in a product reactor at a reaction temperature of from about 600 to about 800 degrees C. and a pressure of at least about atmospheric pressure thereby effecting thermal decomposition of said tribromosilane to deposit high purity polycrystalline silicon on said substrate particles and to produce silicon tetrabromide and hydrogen as reaction products without the production of silicon polymers as an explosive byproduct and amorphous silicon as a clogging byproduct wherein the bed of high purity silicon substrate particles is a moving or fluid bed and further including the step of heating the product reactor walls to a temperature of at least about 900° C. thereby preventing accumulation of product reactor wall scale.

Claim 3

In a process for producing high purity silicon by the thermal decomposition of halosilane, the improvement comprising the steps of: (a) producing tribromosilane by reacting silicon, silicon tetrabromide and hydrogen in a synthesis reactor at a temperature of from about 450 to about 650 degrees C.; (b) separating tribromosilane produced in step (a) from reagents and other reaction products of step (a); (c) passing said separated tribromosilane from step (b) substantially undiluted through a bed of high purity silicon substrate particles in a product reactor at a reaction temperature of from about 600 to about 800 degrees C. and a pressure of at least about atmospheric pressure thereby effecting thermal decomposition of said tribromosilane to deposit high purity polycrystalline silicon on said substrate particles and to produce silicon tetrabromide and hydrogen as reaction products without the production of silicon polymers as an explosive byproduct and amorphous silicon as a clogging byproduct; and (d) feeding hydrogen and silicon tetrabromide byproducts from step (c) into the synthesis step (a) wherein the bed of high purity silicon substrate particles is a moving or fluid bed and further including the step of heating the product reactor walls to a temperature of at least about 900° C. thereby preventing accumulation of product reactor wall scale.

Claim 4

In a process for producing high purity silicon by the thermal decomposition of halosilane, the improvement comprising the steps of: (a) producing tribromosilane by reacting silicon, silicon tetrabromide and hydrogen in a synthesis reactor at a temperature of from about 450 to about 650 degrees C.; (b) separating tribromosilane produced in step (a) from reagents and other reaction products of step (a); (c) passing said separated tribromosilane from step (b) substantially undiluted through a bed of high purity silicon substrate particles in a product reactor at a reaction temperature of from about 600 to about 800 degrees C. and a pressure of at least about atmospheric pressure thereby effecting thermal decomposition of said tribromosilane to deposit high purity polycrystalline silicon on said substrate particles and to produce silicon tetrabromide and hydrogen as reaction products without the production of silicon polymers as an explosive byproduct and amorphous silicon as a clogging byproduct; and (d) feeding hydrogen and silicon tetrabromide byproducts from step (c) into the synthesis step (a) wherein the bed of high purity silicon substrate particles is a moving or fluid bed and further including the step of heating the product reactor walls to a temperature of at least about 900° C. thereby preventing accumulation of product reactor wall scale.