US4314022A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photoresist developers and process
Assignee: 3M Co
•
Filing: 1980-05-05
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Granted: 1982-02-02
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Expires: 2000-05-05
Abstract
Abstract A developing solution for use with imaging film comprising a photoresist layer over an aluminum coated substrate and the process of developing the film are shown to be rapid acting. The developing solution comprises an aqueous solution having a pH of at least 12.5 of an alkali metal hydroxide and a chelating agent having a stability constant for Al +3 of at least 6.70.
Inventors
- 👤 Richard S. Fisch
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 17:28
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/30; G03F7/32; G03F7/322
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
127 words
A process for forming an image on a photosensitive element comprising (1) a substrate, (2) a metal containing layer on said substrate, and (3) a photoresist layer on said aluminum containing layer, which photoresist layer becomes differentially soluble in aqueous alkaline solution in light struck versus non-light struck areas, said process comprising exposing said element to light of sufficient intensity to cause light struck and non-light struck areas of said photoresist to become differentially soluble in aqueous alkaline solution and then developing said element by agitating the element in contact with a developing solution comprising an aqueous alkaline solution having a pH of from 12.5 to 13.7 containing an alkali metal hydroxide and a chelating agent for aluminum ion having a stability constant of greater than 6.7.
Claim 2
Dependent Claim
127 words
A process for forming an image on a photosensitive element comprising (1) a substrate, (2) a metal containing layer on said substrate, and (3) a photoresist layer on said aluminum containing layer, which photoresist layer becomes differentially soluble in aqueous alkaline solution in light struck versus non-light struck areas, said process comprising exposing said element to light of sufficient intensity to cause light struck and non-light struck areas of said photoresist to become differentially soluble in aqueous alkaline solution and then developing said element by agitating the element in contact with a developing solution comprising an aqueous alkaline solution having a pH of from 12.5 to 13.7 containing an alkali metal hydroxide and a chelating agent for aluminum ion having a stability constant of greater than 6.7.
Claim 3
Dependent Claim
16 words
The process of claim 1 wherein the alkali metal hydroxide comprises sodium hydroxide or potassium hydroxide.
Claim 4
Dependent Claim
19 words
The process of claim 1 wherein said chelating agent has a stability constant for aluminum ion greater than 7.0.
Claim 5
Dependent Claim
85 words
The process of claim 3 wherein the substrate comprises a material selected from the group consisting of polymers, ceramics, glass and paper, the pH of the solution is between 12.9 and 13.7, the chelating agent has a stability constant for aluminum ion greater than 7.0 and is present in a concentration of at least 0.02 M, and the solution additionally contains an oxidizing agent in a concentration of from 0.001 to 0.4 M and carbonate ion in a concentration of from 0.001 to 0.5 M.
Claim 6
Dependent Claim
29 words
The process of claim 4 wherein said developer solution dissolves the photoresist in the light struck areas more rapidly than it dissolves the photoresist in the non-light struck areas.
Claim 7
Dependent Claim
29 words
The process of claim 4 wherein said developer solution dissolves the photoresist in the non-light struck areas more rapidly than it dissolves the photoresist in the light struck areas.
Claim 8
Dependent Claim
40 words
The process of claim 1 wherein said solution has a pH between 12.9 and 13.7 and the chelating agent has a stability constant for aluminum ion greater than 7.0 and is present in a concentration of at least 0.02 M.
Claim 9
Dependent Claim
15 words
The process of claim 7 wherein said solution has a pH between 13.1 and 13.4.
Claim 10
Dependent Claim
29 words
The process of claim 7 wherein said developer solution dissolves the photoresist in the light struck areas more rapidly than it dissolves the photoresist in the non-light struck areas.
Claim 11
Dependent Claim
29 words
The process of claim 7 wherein said developer solution dissolves the photoresist in the non-light struck areas more rapidly than it dissolves the photoresist in the light struck areas.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-02-01 | 1985-08-03 | 1986-02-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-02-01 | 1989-08-03 | 1990-02-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-02-01 | 1993-08-03 | 1994-02-02 | $7700.00 | Window Closed / Lapsed |