Method of sweeping quartz

Claim 2

In a method of sweeping quartz wherein the quartz is heated to between 300° C. and 573° C. and a strong DC voltage applied for the purpose of transporting the ionized impurities, the improvement of supplying an external source of energy in the form of electromagnetic waves selected from at least one member of the group consisting of electromagnetic waves having wavelengths in the infrared range and electromagnetic waves having wavelengths in the ultraviolet range as to aid, very substantially, the release and transport of impurities, thereby sweeping the quartz to a higher state of purity in a shorter time.

Claim 3

Method according to claim 1 wherein the external source is selected from the group consisting of a coherent source and an incoherent source.

Claim 4

Method according to claim 2 wherein the external source is coherent.

Claim 5

Method according to claim 2 wherein the external source is incoherent.

Claim 6

Method according to claim 3 wherein the coherent source is a laser.

Claim 7

Method according to claim 3 wherein the coherent source is a light emitting diode.

Claim 8

Method according to claim 4 wherein the incoherent source is a gas discharge lamp.

Claim 9

Method according to claim 1 wherein electromagnetic radiation from more than one source is supplied to the quartz.

Claim 10

Method according to claim 1 wherein electromagnetic radiation from an external source is adapted to impinge on the quartz in a direction substantially parallel to the "Z" crystallographic axis of the quartz.

Claim 11

Method according to claim 1 wherein electromagnetic radiation from an external source is adapted to impinge on the quartz in a direction substantially perpendicular to the "Z" crystallographic axis of the quartz.

Claim 12

Method according to claim 1 wherein electromagnetic radiation from an external source is adapted to impinge on the quartz in a direction substantially parallel to the "Z" crystallographic axis of the quartz and wherein electromagnetic radiation from another external soruce is adapted to impinge on the quartz in a direction substantially perpendicular to the "Z" crystallographic axis of the quartz.

Claim 13

Method according to claim 1 wherein electromagnetic radiation from more than one external source is adapted to impinge on the quartz in a direction substantially parallel to the "Z" crystallographic axis of the quartz.

Claim 14

Method according to claim 1 wherein electromagnetic radiation from more than one external source is adapted to impinge on the quartz in a direction substantially perpendicular to the "Z" crystallographic axis of the quartz.

Claim 15

Method according to claim 1 wherein electromagnetic radiation from more than one external source is adapted to impinge on the quartz in a direction substantially parallel to the "Z" crystallographic axis of the quartz and wherein electromagnetic radiation from more than one external source is adapted to impinge on the quartz in a direction substantially perpendicular to the "Z" crystallographic axis of the quartz.

Claim 16

In a method of sweeping quartz wherein the quartz is heated between 300° C. and 573° C. and a strong DC voltage applied for the purpose of transporting the ionized impurities, the improvement of shining a tunable ultraviolet laser onto the quartz in a direction substantially perpendicular to the "Z" crystallographic axis of the quartz and at the same time shining a tunable infrared laser onto the quartz in a direction substantially perpendicular to the "Z" crystallographic axis of the quartz.

Claim 17

In a method of sweeping quartz wherein the quartz is heated between 300° C. and 573° C. and a strong DC voltage applied for the purpose of transporting the ionized impurities, the improvement of shining a tunable ultraviolet laser onto the quartz in a direction substantially perpendicular to the "Z" crystallographic axis of the quartz and at the same time shining a tunable infrared laser onto the quartz in a direction substantially perpendicular to the "Z" crystallographic axis of the quartz.

Claim 18

In a method of sweeping a quartz section having edges substantially along the X, Y, and Z crystallographic axis of the quartz and platinum electrodes deposited onto the Z surfaces of the quartz, wherein the quartz is heated to about 450° C. and a strong DC voltage applied for the purpose of transporting the ionized impurities, the improvement of positioning a photodetector near the -X surface of the quartz section and directing a source of tunable UV radiation onto the +X surface in such a manner that the photodetector receives this radiation after transmission through the quartz section, wherein the source of UV radiation is tuned through 0.15 μm, to 0.36 μm and wherein in the vicinity of each wavelength where the transmission is minimum, the source is programmed to dwell until the transmission increases to a constant value after which the source is tuned in search of the next minimum at which wavelength the process is repeated.

Claim 19

In a method of sweeping a quartz section having edges substantially along the X, Y, and Z crystallographic axis of the quartz and platinum electrodes deposited onto the Z surfaces of the quartz, wherein the quartz is heated to about 450° C. and a strong DC voltage applied for the purpose of transporting the ionized impurities, the improvement of positioning a photodetector near the -X surface of the quartz section and directing a source of tunable UV radiation onto the +X surface in such a manner that the photodetector receives this radiation after transmission through the quartz section, wherein the source of UV radiation is tuned through 0.15 μm, to 0.36 μm and wherein in the vicinity of each wavelength where the transmission is minimum, the source is programmed to dwell until the transmission increases to a constant value after which the source is tuned in search of the next minimum at which wavelength the process is repeated.

Claim 20

In a method of sweeping a quartz section having edges substantially along the X, Y and Z crystallographic axes of the quartz and platinum electrodes deposited onto the Z surfaces of the quartz, wherein the quartz is heated to about 450° C. and a strong DC voltage applied for the purpose of transporting the ionized impurities, the improvement of positioning a photodetector near the -X surface of the quartz section and directing a source of tunable IR radiation onto the +X surface in such a manner that the photodetector receives this radiation after transmission through the quartz section, wherein the source of IR radiation is tuned through about 1 μm to about 30 μm and wherein in the vicinity of each wavelength where the transmission is minimum, the source is programmed to dwell until the transmission increases to a constant value after which the source is tuned in search of the next minimum at which wavelength the process is repeated.

Claim 21

In a method of sweeping a quartz section having edges substantially along the X, Y and Z crystallographic axes of the quartz and platinum electrodes deposited onto the Z surfaces of the quartz, wherein the quartz is heated to about 450° C. and a strong DC voltage applied for the purpose of transporting the ionized impurities, the improvement of positioning a photodetector near the -X surface of the quartz section and directing a source of tunable IR radiation onto the +X surface in such a manner that the photodetector receives this radiation after transmission through the quartz section, wherein the source of IR radiation is tuned through about 1 μm to about 30 μm and wherein in the vicinity of each wavelength where the transmission is minimum, the source is programmed to dwell until the transmission increases to a constant value after which the source is tuned in search of the next minimum at which wavelength the process is repeated.