Semiconductor voltage regulator

Claim 2

A semiconductor voltage regulator device comprising: a power transistor connected between one end of a field coil disposed on an AC generator and ground, said field coil having the other end thereof connected to a D.C. potential and being excited with a full-wave rectified output voltage from said AC generator; a control circuit for controlling the ON-OFF operation of said power transistor to thereby control an output voltage from said AC generator to a predetermined magnitude; a two layer semiconductor diode for absorbing induction energy generated by said field coil; and a common semiconductor substrate having said power transistor, said control circuit and said semiconductor diode disposed thereon, wherein said substrate forms the collector region of said power transistor and one of said two semiconductor diode layers.

Claim 3

A semiconductor voltage regulator device comprising: a power transistor connected between one end of a field coil disposed on an AC generator and ground, said field coil having the other end thereof connected to a D.C. potential and being excited with a rectified output voltage from said AC generator; a drive transistor of the same conductivity type as said power transistor connected to said power transistor to form a Darlington pair circuit configuration; a control circuit for controlling the ON-OFF operation of said drive transistor to thereby control an output voltage from said generator to a predetermined magnitude; and a semiconductor diode for absorbing induction energy generated by said field coil; wherein there are provided: a first lightly doped semiconductor layer of a first conductivity including portions forming collector regions of said power and drive transistors respectively; a buried heavily doped first layer of said semiconductor diode selectively diffused into said first lightly doped semiconductor layer, said heavily doped first layer of a second conductivity which is opposite from said first lightly doped layer of said first conductivity; a second lightly doped semiconductor layer of said first conductivity epitaxially grown on said first lightly doped semiconductor layer and including a portion thereof underlaid with said buried heavily doped first layer to form a second layer of said semiconductor diode; a plurality of heavily doped semiconductor layers of said second conductivity selectively diffused into said second lightly doped semiconductor layer to respectively form base regions of said power and drive transistors and a first layer wall of said semiconductor diode; and a heavily doped emitter layer of said first conductivity diffused into said heavily doped semiconductor layers forming each of said base regions.

Claim 4

A semiconductor voltage regulator device comprising: a power transistor connected between one end of a field coil disposed on an AC generator and ground, said field coil having the other end thereof connected to a D.C. potential and being excited with a rectified output voltage from said AC generator; a drive transistor of the same conductivity type as said power transistor connected to said power transistor to form a Darlington pair circuit configuration; a control circuit for controlling the ON-OFF operation of said drive transistor to thereby control an output voltage from said generator to a predetermined magnitude; and a semiconductor diode for absorbing induction energy generated by said field coil; wherein there are provided: a first lightly doped semiconductor layer of a first conductivity including portions forming collector regions of said power and drive transistors respectively; a buried heavily doped first layer of said semiconductor diode selectively diffused into said first lightly doped semiconductor layer, said heavily doped first layer of a second conductivity which is opposite from said first lightly doped layer of said first conductivity; a second lightly doped semiconductor layer of said first conductivity epitaxially grown on said first lightly doped semiconductor layer and including a portion thereof underlaid with said buried heavily doped first layer to form a second layer of said semiconductor diode; a plurality of heavily doped semiconductor layers of said second conductivity selectively diffused into said second lightly doped semiconductor layer to respectively form base regions of said power and drive transistors and a first layer wall of said semiconductor diode; and a heavily doped emitter layer of said first conductivity diffused into said heavily doped semiconductor layers forming each of said base regions.

Claim 5

A semiconductor voltage regulator device comprising: an NPN power transistor connected between one end of a field coil disposed on an AC generator and ground, said field coil having the other end thereof connected to a positive potential and being excited with a rectified output voltage from said AC generator; an NPN drive transistor connected to said NPN power transistor to form a Darlington pair circuit configuration; a control circuit for controlling the ON-OFF operation of said NPN drive transistor to thereby control an output voltage from said generator to a predetermined magnitude; and a semiconductor diode for absorbing induction energy generated by said field coil; wherein there are provided: a first N - semiconductor layer including portions forming collector regions of said NPN power and drive transistors respectively; a buried P + anode layer of said semiconductor diode selectively diffused into said first N - semiconductor layer; a second N - semiconductor layer epitaxially grown on said first N - semiconductor layer and including a portion thereof underlaid with said buried anode layer to form a cathode layer of said semiconductor diode; a plurality of P + semiconductor layers selectively diffused into said second N - semiconductor layer to respectively form base regions of said NPN power and drive transistors and an anode wall of said semiconductor diode; and an N + emitter layer diffused into said P + semiconductor layers forming each of said base regions.

Claim 6

A semiconductor voltage regulator device comprising: an NPN power transistor connected between one end of a field coil disposed on an AC generator and ground, said field coil having the other end thereof connected to a positive potential and being excited with a rectified output voltage from said AC generator; an NPN drive transistor connected to said NPN power transistor to form a Darlington pair circuit configuration; a control circuit for controlling the ON-OFF operation of said NPN drive transistor to thereby control an output voltage from said generator to a predetermined magnitude; and a semiconductor diode for absorbing induction energy generated by said field coil; wherein there are provided: a first N - semiconductor layer including portions forming collector regions of said NPN power and drive transistors respectively; a buried P + anode layer of said semiconductor diode selectively diffused into said first N - semiconductor layer; a second N - semiconductor layer epitaxially grown on said first N - semiconductor layer and including a portion thereof underlaid with said buried anode layer to form a cathode layer of said semiconductor diode; a plurality of P + semiconductor layers selectively diffused into said second N - semiconductor layer to respectively form base regions of said NPN power and drive transistors and an anode wall of said semiconductor diode; and an N + emitter layer diffused into said P + semiconductor layers forming each of said base regions.