Stripe-geometry double heterojunction laser device

Claim 2

A stripe-geometry heterostructure semiconductor laser comprising: first and second ohmic contacts, a multilayer active medium including a first epitaxial layer of Al x Ga 1-x As, a second epitaxial layer of Al y Ga 1-y As, 0≦y≦x, thereby forming a first heterojunction at the interface therebetween, and a third epitaxial layer of Al z Ga 1-z As, z>y, thereby forming a second heterojunction at the interface between said Al z Ga 1-z As layer and said Al y Ga 1-y As layer, said medium having a pair of spaced parallel reflective surfaces forming a pair of mirrors of an optical resonator, said second layer including a first region extending between said reflective surfaces in a stripe-like manner with the ends thereof spaced apart from said reflective surfaces, and a second region contiguous to said first region and extending between said reflective surfaces and having a predetermined band gap, said first region having a band gap narrower than that of said second region, said third layer including a third region extending between said reflective surfaces so as to overlay said first region, the width of said third region being wider than that of said second region, said third region being adapted to inject carriers into said second layer.

Claim 3

A laser device as claimed in claim 1, wherein the ends of said third region are spaced apart from said reflective surfaces.

Claim 4

A double heterostructure injection laser comprising: first and second ohmic contacts, an n-type GaAs substrate, a first layer made of n-type Al x Ga 1-x As epitaxially grown on one major surface of said substrate, a second layer made of n-type Al y Ga 1-y As epitaxially grown on said first layer, 0≦y≦x, a third layer made of n-type Al z Ga 1-z As epitaxially grown on said second layer, z>y, said second and third layers having a strip-shaped p-type region extended from the surface of said third layer to a portion of said second layer by means of the selective diffusion of p-type impurities, said stripe-shaped p-type region and a contiguous region extending between a pair of spaced parallel reflective surfaces of said laser and lying within said second layer having different impurity characteristics such that said p-type region has an effective refractive index difference with respect to said contiguous region at least |10 -4 |, a silicon dioxide film formed on said third layer and having a stripe-shaped opening having a width wider than that of said stripe-shaped p-type region, said third layer further having a p-type region formed by means of the selective diffusion of p-type impurities through said stripe-shaped opening and thereby partly overlapping said stripe-shaped p-type region, said p-type region and said stripe-shaped p-type region being spaced apart from the reflective surfaces of said second and third layers.

Claim 5

A double heterostructure injection laser comprising: first and second ohmic contacts, an n-type GaAs substrate, a first layer made of n-type Al x Ga 1-x As epitaxially grown on one major surface of said substrate, a second layer made of n-type Al y Ga 1-y As epitaxially grown on said first layer, 0≦y≦x, a third layer made of n-type Al z Ga 1-z As epitaxially grown on said second layer, z>y, said second and third layers having a strip-shaped p-type region extended from the surface of said third layer to a portion of said second layer by means of the selective diffusion of p-type impurities, said stripe-shaped p-type region and a contiguous region extending between a pair of spaced parallel reflective surfaces of said laser and lying within said second layer having different impurity characteristics such that said p-type region has an effective refractive index difference with respect to said contiguous region at least |10 -4 |, a silicon dioxide film formed on said third layer and having a stripe-shaped opening having a width wider than that of said stripe-shaped p-type region, said third layer further having a p-type region formed by means of the selective diffusion of p-type impurities through said stripe-shaped opening and thereby partly overlapping said stripe-shaped p-type region, said p-type region and said stripe-shaped p-type region being spaced apart from the reflective surfaces of said second and third layers.

Claim 6

A stripe-geometry heterostructure semiconductor laser comprising: first and second ohmic contacts, a multilayer active medium including a first semiconductor layer, a second semiconductor layer having wider energy band gap than that of said first layer, thereby forming a first heterojunction at the interface therebetween, and a third semiconductor layer having wider energy band gap than that of said first layer, thereby forming a second heterojunction at the interface between said third layer and said second layer, said medium having a pair of spaced parallel reflective surfaces forming a pair of mirrors of an optical resonator, said second layer including a first region extending between said reflective surface in a stripe-like manner, and a second region substantially surrounding said first region and extending between said reflective surface and having a predetermined uniform band gap, said first region having a band gap narrower than that of said second region, said third layer including a third region extending between said reflective surfaces so as to overlay said first region, the width of said third region being wider than that of said first region, and said third region having a carrier injection region being adapted to inject carriers into said second layer.

Claim 7

A stripe-geometry heterostructure semiconductor laser comprising: first and second ohmic contacts, a multilayer active medium including a first semiconductor layer, a second semiconductor layer having wider energy band gap than that of said first layer, thereby forming a first heterojunction at the interface therebetween, and a third semiconductor layer having wider energy band gap than that of said first layer, thereby forming a second heterojunction at the interface between said third layer and said second layer, said medium having a pair of spaced parallel reflective surfaces forming a pair of mirrors of an optical resonator, said second layer including a first region extending between said reflective surface in a stripe-like manner, and a second region substantially surrounding said first region and extending between said reflective surface and having a predetermined uniform band gap, said first region having a band gap narrower than that of said second region, said third layer including a third region extending between said reflective surfaces so as to overlay said first region, the width of said third region being wider than that of said first region, and said third region having a carrier injection region being adapted to inject carriers into said second layer.

Claim 8

A laser device as claimed in claim 4, wherein said stripe region and said carrier injection region are separated from said reflective surfaces by non-exciting regions having lengths at least that of the carrier diffusion length.

Claim 9

A laser device as claimed in claim 5, wherein the length of the non-exciting regions is in the range of 30˜60 μm.

Claim 10

A laser device as claimed in claim 5, wherein said stripe region is longer than said carrier injection region.

Claim 11

A laser device as claimed in claim 4, wherein the difference in said refractive indices is at least |10 -4 |.

Claim 12

A laser device as claimed in claim 4, wherein said first, second and third semiconductor layers are n-type semiconductors and a p-type impurity is diffused into said second and third layers to form said stripe region and said carrier injection region.

Claim 13

A laser device as claimed in claim 4, wherein said first, second and third semiconductor layers are p-type semi-conductors and an n-type impurity is diffused into said second and third layer to form said stripe region and said carrier injection region.

Claim 14

A laser device as claimed in claim 4, wherein said third semiconductor layer, not including said carrier injection region, is diffused with an impurity at high concentration.

Claim 15

A laser device as claimed in claim 4, wherein said third semiconductor layer, not including said carrier injection region, is subjected to proton bombardment.

Claim 16

A laser device as claimed in claim 4, wherein said third semiconductor layer, not including said carrier injection region, is etched to form a mesa structure.

Claim 17

A laser device as claimed in claim 4, further comprising thin films deposited on said reflective surfaces to prevent photo-enhanced oxidation of said reflective surfaces.

Claim 18

A laser device as claimed in claim 4, including a fourth semiconductor layer over said third semiconductor layer, said first, second and fourth semiconductor layers being of one conductivity type, and said third semiconductor layer being of the opposite conductivity type.

Claim 19

A laser device as claimed in claim 4, including a fourth semiconductor layer over said third semiconductor layer and wherein said fourth semiconductor layer and said third semiconductor layer, not including said carrier injection region, are subjected to proton bombardment.

Claim 20

A laser device as claimed in claim 4, including a fourth semiconductor layer over said third semiconductor layer and wherein said fourth semiconductor layer and said third semiconductor layer, not including said carrier injection region, are etched to form a mesa structure.

Claim 21

A laser device as claimed in claims 1 or 4, wherein said first region is formed by diffusing an impurity having a first conductivity type so as to penetrate said second layer from the side of said third layer, and said third region includes a first portion having said first conductivity type and aligned with said first region and a second portion located outside said portion and having said first conductivity type and having a lower impurity concentration than that of said first portion.