US4308571A
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Low temperature-sinterable dielectric composition and thick film capacitor using the same
Assignee: Hitachi Ltd
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Filing: 1980-03-26
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Granted: 1981-12-29
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Expires: 2000-03-26
Abstract
Abstract A low temperature-sinterable dielectric composition is provided, whose sintered composition when prepared by firing a uniform mixture consisting of lead ferrotungstate, lead titanate and manganese dioxide at a temperature of not higher than 1,000 DEG C. has the general formula A.Pb(Fe2/3W1/3)1-xTixO3+B.MnO2, wherein 0.005</=x</=0.65, A=0.95-0.9995, and B=0.0005-0.05, a relative dielectric constant of at least 2,000 at 25 DEG C., a dissipation factor (tan delta ) of not more than 5% at 25 DEG C., and a specific resistance of at least 109 OMEGA .cm at 25 DEG C. Also provided is a thick film capacitor having a dielectric layer prepared from said composition.
Inventors
- 👤 Hirayoshi Tanei
- 👤 Akira Ikegami
- 👤 Noriyuki Taguchi
- 👤 Katsuo Abe
- 👤 Hiroshi Ohtsu
- 👤 Tokio Isogai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 09:10
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/12; H01G4/1209; H01G4/1254; H01G4/1263; C; C04; C04B; C04B35/00; C04B35/01; C04B35/46; C04B35/462; C04B35/472; C04B35/495; C04B35/497; C04B35/499
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
92 words
A low temperature-sinterable dielectric composition of uniform mixture consisting of lead ferrotungstate, lead titanate, and manganese dioxide, characterized in that its sintered composition, prepared by firing the composition at a temperature of 900° C. for 10 minutes, is represented by the general formula A.Pb(Fe.sub.2/3 W.sub.1/3).sub.1-x Ti.sub.x O.sub.3 +B.MnO.sub.2 wherein 0.005≦×≦0.35, A=0.95-0.9995, and B=0.0005-0.05, and has a relative dielectric constant of at least 2,000 at 25° C., a dissipation factor (tan δ) of not higher than 5% at 25° C., and a specific resistance of at least 10 9 Ω.cm at 25° C.
Claim 2
Dependent Claim
92 words
A low temperature-sinterable dielectric composition of uniform mixture consisting of lead ferrotungstate, lead titanate, and manganese dioxide, characterized in that its sintered composition, prepared by firing the composition at a temperature of 900° C. for 10 minutes, is represented by the general formula A.Pb(Fe.sub.2/3 W.sub.1/3).sub.1-x Ti.sub.x O.sub.3 +B.MnO.sub.2 wherein 0.005≦×≦0.35, A=0.95-0.9995, and B=0.0005-0.05, and has a relative dielectric constant of at least 2,000 at 25° C., a dissipation factor (tan δ) of not higher than 5% at 25° C., and a specific resistance of at least 10 9 Ω.cm at 25° C.
Claim 3
Dependent Claim
87 words
A low temperature-sinterable dielectric composition of uniform mixture consisting of lead ferrotungstate, lead titanate, and manganese dioxide, characterized in that its sintered composition, prepared by firing the composition at 900° C. for 10 minutes, is represented by the general formula A.Pb(Fe.sub.2/3 W.sub.1/3).sub.1-x Ti.sub.x O.sub.3 +B.MnO.sub.2 wherein 0.005≦×≦0.30, A=0.95-0.9995 and B=0.0005-0.05, and has a relative dielectric constant of 3,400-9,500 at 25° C., a dissipation factor (tan δ) of not higher than 5%, at 25° C. and a specific resistance of at least 10 9 Ω.cm at 25° C.
Claim 4
Dependent Claim
87 words
A low temperature-sinterable dielectric composition of uniform mixture consisting of lead ferrotungstate, lead titanate, and manganese dioxide, characterized in that its sintered composition, prepared by firing the composition at 900° C. for 10 minutes, is represented by the general formula A.Pb(Fe.sub.2/3 W.sub.1/3).sub.1-x Ti.sub.x O.sub.3 +B.MnO.sub.2 wherein 0.005≦×≦0.30, A=0.95-0.9995 and B=0.0005-0.05, and has a relative dielectric constant of 3,400-9,500 at 25° C., a dissipation factor (tan δ) of not higher than 5%, at 25° C. and a specific resistance of at least 10 9 Ω.cm at 25° C.
Claim 5
Dependent Claim
71 words
A thick film capacitor comprising a substrate plate, a lower electrode formed on the substrate plate, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, characterized in that the dielectric layer is prepared from a low temperature-sinterable dielectric composition consisting of lead ferrotungstate, lead titanate and manganese dioxide, represented by the general formula A.Pb(Fe.sub.2/3 W.sub.1/3).sub.1-x Ti.sub.x O.sub.3 +B.MnO.sub.2 wherein 0.005≦×≦0.35, A=0.95-0.9995 and B=0.0005-0.05.
Claim 6
Dependent Claim
71 words
A thick film capacitor comprising a substrate plate, a lower electrode formed on the substrate plate, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, characterized in that the dielectric layer is prepared from a low temperature-sinterable dielectric composition consisting of lead ferrotungstate, lead titanate and manganese dioxide, represented by the general formula A.Pb(Fe.sub.2/3 W.sub.1/3).sub.1-x Ti.sub.x O.sub.3 +B.MnO.sub.2 wherein 0.005≦×≦0.35, A=0.95-0.9995 and B=0.0005-0.05.
Claim 7
Dependent Claim
71 words
A thick film capacitor comprising a substrate plate, a lower electrode formed on the substrate plate, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, characterized in that the dielectric layer is prepared from a low temperature-sinterable dielectric composition consisting of lead ferrotungstate, lead titanate and manganese dioxide, represented by the general formula A.Pb(Fe.sub.2/3 W.sub.1/3).sub.1-x Ti.sub.x O.sub.3 +B.MnO.sub.2 wherein 0.05≦×≦0.30, A=0.95-0.9995 and B=0.0005-0.05.
Claim 8
Dependent Claim
71 words
A thick film capacitor comprising a substrate plate, a lower electrode formed on the substrate plate, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, characterized in that the dielectric layer is prepared from a low temperature-sinterable dielectric composition consisting of lead ferrotungstate, lead titanate and manganese dioxide, represented by the general formula A.Pb(Fe.sub.2/3 W.sub.1/3).sub.1-x Ti.sub.x O.sub.3 +B.MnO.sub.2 wherein 0.05≦×≦0.30, A=0.95-0.9995 and B=0.0005-0.05.
Claim 9
Dependent Claim
29 words
The thick film capacitor according to claim 3 or 4, wherein said low temperature-sinterable dielectric composition is sintered at 900° C. for 10 minutes to provide a sintered composition.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-12-28 | 1985-06-29 | 1985-12-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-12-28 | 1989-06-29 | 1989-12-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-12-28 | 1993-06-29 | 1993-12-29 | $7700.00 | Window Closed / Lapsed |