US4307181A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Masking agent for the deposition of a material and method for such a deposition using this masking agent
Assignee: Ebauches SA
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Filing: 1980-03-19
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Granted: 1981-12-22
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Expires: 2000-03-19
Abstract
Abstract To prepare a masking agent resistant to temperature, one adds silica powder to a photoresist. The mixture thus obtained is used to produce selective deposition of a layer of material on a substrate. The mixture of photoresist and silica powder serves as a photo-sensitive protective material which is then eliminated partially by selective exposure to light and use of a photographic developer. The temperatures involved in the deposition of the layer of desired material, for instance tin oxide, are about 500° C. (deposition in the vapor phase), and the photo-sensitive material would be liable to destruction if it did not contain silica powder. It is then necessary, once the deposition of the desired material has been effected, to increase the temperature of the workpiece up to about 540° C. to destroy and, hence, to eliminate the protective material.
Inventors
- 👤 Claude Ganguillet
- 👤 Jacques Cognard
- 👤 Yves Ruedin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 10:12
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/26; G03F7/42; H; H05; H05K; H05K3/00; H05K3/0073; H05K3/0076; H05K3/10; H05K3/14; H05K3/143
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
169 words
A method for depositing a layer of a material on at least one area of the surface of a substrate, said method comprising the steps of: providing a layer of a masking agent on the surface of said substrate except on said at least one area, said masking agent consisting of a mixture of photoresist and particles of silica powder, said providing a layer including exposing selected areas of the masking agent to light and eliminating the masking agent in said exposed areas by means of a developer, depositing a layer of said material over said surface including said at least one area, said deposition being provided at a temperature of at least 300° C., heating said substrate to a temperature corresponding to the complete destruction of the photoresist mixed with said silica particles, cleaning the surface of said substrate so as to remove said particles, said destroyed photoresist and said material deposited thereon, so that said material only remains on said at least one area of said surface.
Claim 2
Independent Claim
169 words
A method for depositing a layer of a material on at least one area of the surface of a substrate, said method comprising the steps of: providing a layer of a masking agent on the surface of said substrate except on said at least one area, said masking agent consisting of a mixture of photoresist and particles of silica powder, said providing a layer including exposing selected areas of the masking agent to light and eliminating the masking agent in said exposed areas by means of a developer, depositing a layer of said material over said surface including said at least one area, said deposition being provided at a temperature of at least 300° C., heating said substrate to a temperature corresponding to the complete destruction of the photoresist mixed with said silica particles, cleaning the surface of said substrate so as to remove said particles, said destroyed photoresist and said material deposited thereon, so that said material only remains on said at least one area of said surface.
Claim 3
Independent Claim
171 words
A method for depositing a layer of a material on at least one area of the surface of a substrate said deposition being provided at a temperature of at least 300° C., said method comprising the steps of: providing a layer of a masking agent on the surface of said substrate except on said at least one area, said masking agent consisting of a mixture of photoresist and particles of silica powder, said providing a layer including exposing selected areas of the masking agent to light and eliminating the masking agent in said exposed areas by means of a developer; depositing a layer of said material over said surface including said at least one area at a temperature which is sufficient to finally produce the complete destruction of the photoresist mixed with said silica particles, and cleaning the surface of said substrate so as to remove said particles, said destroyed photoresist and said material deposited thereon, so that said material only remains on said at least one area of said surface.
Claim 4
Independent Claim
171 words
A method for depositing a layer of a material on at least one area of the surface of a substrate said deposition being provided at a temperature of at least 300° C., said method comprising the steps of: providing a layer of a masking agent on the surface of said substrate except on said at least one area, said masking agent consisting of a mixture of photoresist and particles of silica powder, said providing a layer including exposing selected areas of the masking agent to light and eliminating the masking agent in said exposed areas by means of a developer; depositing a layer of said material over said surface including said at least one area at a temperature which is sufficient to finally produce the complete destruction of the photoresist mixed with said silica particles, and cleaning the surface of said substrate so as to remove said particles, said destroyed photoresist and said material deposited thereon, so that said material only remains on said at least one area of said surface.
Claim 5
Independent Claim
195 words
A method of depositing a layer of a material on at least one area of the surface of a substrate said deposition being performed at a temperature of at least 300° C., said temperature corresponding to the beginning of the softening of said substrate, said method comprising the steps of: depositing a layer of silica over the whole surface of said substrate, providing a layer of a masking agent on the surface of said substrate except on said at least one area, said masking agent consisting of a mixture of photoresist and particles of silica powder, said providing a layer including exposing selected areas of the masking agent to light and eliminating the masking agent in said exposed areas by means of a developer, depositing a layer of said material over said surface including said at least one area at a temperature which is sufficient to finally produce the complete destruction of the photoresist mixed with said silica particles, and cleaning the surface of said substrate so as to remove said particles, said destroyed photoresist and said material deposited thereon, so that said material only remains on said at least one area of said surface.
Claim 6
Independent Claim
195 words
A method of depositing a layer of a material on at least one area of the surface of a substrate said deposition being performed at a temperature of at least 300° C., said temperature corresponding to the beginning of the softening of said substrate, said method comprising the steps of: depositing a layer of silica over the whole surface of said substrate, providing a layer of a masking agent on the surface of said substrate except on said at least one area, said masking agent consisting of a mixture of photoresist and particles of silica powder, said providing a layer including exposing selected areas of the masking agent to light and eliminating the masking agent in said exposed areas by means of a developer, depositing a layer of said material over said surface including said at least one area at a temperature which is sufficient to finally produce the complete destruction of the photoresist mixed with said silica particles, and cleaning the surface of said substrate so as to remove said particles, said destroyed photoresist and said material deposited thereon, so that said material only remains on said at least one area of said surface.
Claim 7
Independent Claim
20 words
A method according to anyone of the claims 1, 2 or 3, wherein said material is deposited in vapor phase.
Claim 8
Independent Claim
26 words
A method according to anyone of the claims 2 or 3, wherein said material is deposited in vapor phase at a temperature higher than 500° C.
Claim 9
Dependent Claim
21 words
A method according to claim 1, wherein the heating of the substrate is performed at a temperature of about 540° C.
Claim 10
Independent Claim
18 words
A method according to anyone of the claims 1, 5 or 3, wherein said material is tin oxide.
Claim 11
Independent Claim
22 words
A method as claimed in claims 1, 2 or 3 in which said particles have a diameter of less than one micron.
Claim 12
Independent Claim
25 words
The method as claimed in claims 1, 2 or 3 in which the silica powder represents 1 to 2% of the weight of the mixture.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-12-21 | 1985-06-22 | 1985-12-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-12-21 | 1989-06-22 | 1989-12-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-12-21 | 1993-06-22 | 1993-12-22 | $7700.00 | Window Closed / Lapsed |