US4307131A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing metal-semiconductor contacts exhibiting high injected current density
Assignee: Thales SA
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Filing: 1979-10-10
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Granted: 1981-12-22
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Expires: 1999-10-10
Abstract
Abstract A method for virtually eliminating contact resistances in particular at very high frequency, for instance in the case of source and drain contacts of a field effect transistor. The method consists in creating a matrix of depressions or "dishes", for example 1 to 6 microns in diameter, separated by intervals of some few microns. In a first step, windows are opened in an insulating layer by an etching operation. In a second step, by ion machining, angular profiles are carved in the bottom of the dishes for promoting tunnel effect. In a last step a metal layer is deposited and enshrouds the matrix.
Inventors
- 👤 Paul C. Moutou
- 👤 Jacques Montel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:08
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0116; H10D64/012; H10D64/0124; H10D64/60; H10D64/62; H10P34/00; H10P34/40; H10P34/42; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2042; H10P76/2045; H10P95/00; H10P95/50; H10D62/00; H10D62/80; H10D62/85; H10D64/20; H10D64/23; H10D64/251; H10D64/256
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
67 words
A method of manufacturing "metal semiconductor" contacts destined to be employed together as a single contact, consisting of: (I) depositing an insulating layer onto the surface of a semiconductor; (II) forming in said insulating layer and in a superficial portion of said semiconductor a matrix of microscopic depressions having a major dimension d, said depressions separated by an interval e, wherein 0.1 micron≦d≦10 microns 1.5 micron≦e≦30 microns;
Claim 2
Independent Claim
67 words
A method of manufacturing "metal semiconductor" contacts destined to be employed together as a single contact, consisting of: (I) depositing an insulating layer onto the surface of a semiconductor; (II) forming in said insulating layer and in a superficial portion of said semiconductor a matrix of microscopic depressions having a major dimension d, said depressions separated by an interval e, wherein 0.1 micron≦d≦10 microns 1.5 micron≦e≦30 microns;
Claim 3
Dependent Claim
81 words
(III) depositing a layer of conductive material in said depressions until a single conductive layer covering the matrix of depressions is formed; said matrix of depressions and said insulating layer being completely enshrouded by a substantially planar layer of said conductive material and the thickness thereof being substantially uniform over the entire surface area of said insulating layer and the matrix of depressions contained therein to thereby increase the injected current density and concurrently substantially eliminate contact resistances of said contacts.
Claim 4
Dependent Claim
81 words
(III) depositing a layer of conductive material in said depressions until a single conductive layer covering the matrix of depressions is formed; said matrix of depressions and said insulating layer being completely enshrouded by a substantially planar layer of said conductive material and the thickness thereof being substantially uniform over the entire surface area of said insulating layer and the matrix of depressions contained therein to thereby increase the injected current density and concurrently substantially eliminate contact resistances of said contacts.
Claim 5
Dependent Claim
22 words
A method as claimed in claim 1, wherein the step (II) comprises an ion machining step applied to the matrix of depressions.
Claim 6
Dependent Claim
42 words
A method as claimed in claim 1, wherein: step (I) comprises depositing a silica layer on said surface; and step (II) comprises forming windows by an etching operation in said silica layer, and excavating said windows to form depressions penetrating said semiconductor.
Claim 7
Dependent Claim
21 words
A method as claimed in claim 1, wherein the step III involves a heat treatment following deposition of the conductive material.
Claim 8
Dependent Claim
16 words
A method as claimed in claim 1, wherein the step (II) comprises an electronic masking step.
Claim 9
Dependent Claim
17 words
A method as claimed in claim 1, wherein the step (II) comprises a laser beam etching operation.
Claim 10
Dependent Claim
18 words
A method as claimed in claim 1, wherein in step (III) said conductive material is a metal layer.
Claim 11
Dependent Claim
20 words
A method as claimed in claim 8, wherein said metal, by doping of the semiconductor material, forms a rectifying junction.
Claim 12
Dependent Claim
58 words
A method as claimed in claim 1, wherein the cross sectional area of said depression decreases between the surface of the semiconductor and the base of the depression, forming the depression into a dish shape in the superficial portion of said semiconductor, whereby the shape of the depression increases the local electric field and promotes the tunnel effect.
Claim 13
Independent Claim
82 words
A method of manufacturing "metal semiconductor" contacts destined to be employed together as a single contact, consisting of: (I) depositing an insulating layer of silica onto the surface of a semiconductor; (II) forming windows in said insulating silica layer by an etching operation and excavating said windows by an ion machining step in a superficial portion of said semiconductor to form a matrix of microscopic depressions having a major dimension d, said depressions separated by an interval e, wherein 0.1 micron≦d≦10 microns
Claim 14
Independent Claim
82 words
A method of manufacturing "metal semiconductor" contacts destined to be employed together as a single contact, consisting of: (I) depositing an insulating layer of silica onto the surface of a semiconductor; (II) forming windows in said insulating silica layer by an etching operation and excavating said windows by an ion machining step in a superficial portion of said semiconductor to form a matrix of microscopic depressions having a major dimension d, said depressions separated by an interval e, wherein 0.1 micron≦d≦10 microns
Claim 15
Dependent Claim
90 words
5 micron≦e≦30 microns; (III) depositing a layer of conductive metal material in said depressions until a single conductive layer covering the matrix of depressions is formed; heat treating following the deposition; said matrix of depressions and said insulating layer being completely enshrouded by a substantially planar layer of said conductive material and the thickness thereof being substantially uniform over the entire surface area of said insulating layer and the matrix of depressions contained therein to thereby increase the injected current density and concurrently substantially eliminate contact resistances of said contacts.
Claim 16
Dependent Claim
90 words
5 micron≦e≦30 microns; (III) depositing a layer of conductive metal material in said depressions until a single conductive layer covering the matrix of depressions is formed; heat treating following the deposition; said matrix of depressions and said insulating layer being completely enshrouded by a substantially planar layer of said conductive material and the thickness thereof being substantially uniform over the entire surface area of said insulating layer and the matrix of depressions contained therein to thereby increase the injected current density and concurrently substantially eliminate contact resistances of said contacts.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-12-21 | 1985-06-22 | 1985-12-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-12-21 | 1989-06-22 | 1989-12-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-12-21 | 1993-06-22 | 1993-12-22 | $7700.00 | Window Closed / Lapsed |