US4304623A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming silicon crystalline bodies
Assignee: International Business Machines Corp
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Filing: 1980-07-23
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Granted: 1981-12-08
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Expires: 2000-07-23
Abstract
Abstract Method for forming an elongated silicon crystalline body using a specially designed capillary die. The method uses a higher melt meniscus in the central region of the growth front than at the edges of the front. The edges of the top surface of the die are not concentric with the ribbon cross-section.
Inventors
- 👤 Theodore F. Ciszek
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:28
CPC Classifications
C; C30; C30B; C30B15/00; C30B15/34; Y; Y10; Y10S; Y10S117/00; Y10S117/90
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
90 words
Method for growing a silicon crystalline body from a melt comprising: providing a capillary die which is wettable by the silicon melt; establishing a molten silicon film overlying the top surface of said die; growing and pulling a crystalline body from said film wherein the meniscus profile near each edge of the said top surface of the die in narrower and closer to the die surface than the meniscus in the center of the die top surface; and continuously replenishing said film as said body is being grown and pulled.
Claim 2
Dependent Claim
90 words
Method for growing a silicon crystalline body from a melt comprising: providing a capillary die which is wettable by the silicon melt; establishing a molten silicon film overlying the top surface of said die; growing and pulling a crystalline body from said film wherein the meniscus profile near each edge of the said top surface of the die in narrower and closer to the die surface than the meniscus in the center of the die top surface; and continuously replenishing said film as said body is being grown and pulled.
Claim 3
Dependent Claim
35 words
The method of claim 1 further comprising purging all undesirable gases by use of the flow of an inert gas and directing a flow of said inert gas at the growth interface of said body.
Claim 4
Dependent Claim
14 words
The method of claim 1 wherein the die surface is composed of silicon carbide.
Claim 5
Dependent Claim
22 words
The method of claim 1 further comprising maintaining the temperature of the crystalline body being grown by heating portions of the die.
Claim 6
Dependent Claim
41 words
The method of claim 1 further comprising directing the flow of an inert gas in different controlled amounts of different segments of the liquid-solid crystal interface so as to evenly maintain the growth temperature across the said interface of said body.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-12-07 | 1985-06-08 | 1985-12-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-12-07 | 1989-06-08 | 1989-12-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-12-07 | 1993-06-08 | 1993-12-08 | $7700.00 | Window Closed / Lapsed |