Abstract This invention is directed generally to a layered inorganic photoresponsive device, this device being comprised of a substrate, or supporting base, containing on its surface a layer of hole injecting material comprised of gold, a hole transport layer in operative contact with the hole injecting layer, the transport layer being comprised of a halogen doped selenium arsenic alloy, wherein the percentage of selenium present is from about 99.5 percent to about 99.9 percent, the percentage of arsenic present is from about 0.5 percent to 0.1 percent, the percentage of halogen present ranges from about 10 parts per million to 200 parts per million, followed by a charge generating material overcoated on the transport layer, this material being comprised of inorganic photoconductive substances, and as an optional layer a layer of insulating organic resin overlaying the charge generating layer. The transport and generating layers can also be comprised of one composite layer. This device, with the overcoating layer, is useful in systems employing a double charging sequence, that is, charging the photoresponsive device with a uniform layer of negative charges, followed by charging with a uniform layer of positive charges.
A layered inorganic photosensitive device which consists of (a) a substrate; (b) a layer of hole injecting material capable of injecting holes into a layer on its surface, this layer being comprised of gold, and having a thickness of from about 0.02 microns to about 10 microns; (c) a hole transport layer in operative contact with the hole injecting layer, this layer being comprised of a halogen doped selenium-arsenic alloy wherein the percentage of selenium present by weight is from about 99.5 percent to about 99.9 percent, the percentage of arsenic present by weight is from about 0.5 percent to about 0.1 percent, and the halogen is present in an amount of from about 10 parts per million, to about 200 parts per million; (d) a charge generating layer overcoated on the hole transport layer, consisting of an inorganic photoconductive material, the charge generating layer having a thickness of from about 0.1 micron to about 5 microns; (e) an electrically insulating organic resin overlaying the charge generating layer; and (f) a hole trapping layer situated between the generating layer and the overcoating layer, said trapping layer having a thickness of from about 0.05 microns to about 5 microns and being comprised of inorganic materials selected from selenium, selenium alloys, and halogen doped selenium arsenic alloys.
Claim 2
Dependent Claim
215 words
A layered inorganic photosensitive device which consists of (a) a substrate; (b) a layer of hole injecting material capable of injecting holes into a layer on its surface, this layer being comprised of gold, and having a thickness of from about 0.02 microns to about 10 microns; (c) a hole transport layer in operative contact with the hole injecting layer, this layer being comprised of a halogen doped selenium-arsenic alloy wherein the percentage of selenium present by weight is from about 99.5 percent to about 99.9 percent, the percentage of arsenic present by weight is from about 0.5 percent to about 0.1 percent, and the halogen is present in an amount of from about 10 parts per million, to about 200 parts per million; (d) a charge generating layer overcoated on the hole transport layer, consisting of an inorganic photoconductive material, the charge generating layer having a thickness of from about 0.1 micron to about 5 microns; (e) an electrically insulating organic resin overlaying the charge generating layer; and (f) a hole trapping layer situated between the generating layer and the overcoating layer, said trapping layer having a thickness of from about 0.05 microns to about 5 microns and being comprised of inorganic materials selected from selenium, selenium alloys, and halogen doped selenium arsenic alloys.